IXTA3N110 N-Channel MOSFET 1100V 3A Equivalent & Substitute Parts

Part Overview

The IXTA3N110 is an N-Channel MOSFET rated for 1100V drain-to-source voltage with 3A continuous drain current at 25°C. This device is housed in a Surface Mount TO-263AA package and is designed for high-voltage switching applications requiring 150W maximum power dissipation. The IXTA3N110 is classified as obsolete, necessitating identification of functionally equivalent substitute components for ongoing design support and procurement.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	1100	V
Continuous Drain Current (Id) @ 25°C	3	A
Drive Voltage (Max Rds On)	10	V
Rds On (Max) @ Id, Vgs	4	Ohm @ 1.5A, 10V
Gate Threshold Voltage (Vgs(th)) @ Id	5	V @ 250µA
Gate Charge (Qg) @ Vgs	42	nC @ 10V
Maximum Gate Voltage (Vgs)	±20	V
Input Capacitance (Ciss) @ Vds	1350	pF @ 25V
Power Dissipation (Max)	150	W
Operating Temperature Range	-55 to 150	°C
Mounting Type	Surface Mount	—
Package	TO-263AA	—

Substitute Part Grouping Explanation

Substitution of the IXTA3N110 is determined by compatibility across the following critical electrical and mechanical parameters:

Electrical Compatibility Criteria:

Drain-to-Source Voltage (Vdss) must equal or exceed 1100V
Continuous Drain Current (Id) must support the application requirement
Gate drive voltage compatibility at 10V
Gate threshold voltage (Vgs(th)) within acceptable switching margins
Maximum gate voltage rating (Vgs) must accommodate ±20V
Operating temperature range must span -55°C to 150°C

Mechanical Compatibility Criteria:

Surface Mount technology
TO-263AA package footprint and pinout

The IXTA2R4N120P qualifies as a substitute based on matching package type, mounting technology, and gate drive voltage specifications. This device maintains the same operating temperature range and exceeds the minimum voltage rating requirement.

Parameter Comparison

Parameter	IXTA3N110	IXTA2R4N120P	Unit
Drain-to-Source Voltage (Vdss)	1100	1200	V
Continuous Drain Current (Id) @ 25°C	3	2.4	A
Drive Voltage (Max Rds On)	10	10	V
Rds On (Max) @ Id, Vgs	4 @ 1.5A, 10V	7.5 @ 500mA, 10V	Ohm
Gate Threshold Voltage (Vgs(th)) @ Id	5 @ 250µA	4.5 @ 250µA	V
Gate Charge (Qg) @ Vgs	42 @ 10V	37 @ 10V	nC
Maximum Gate Voltage (Vgs)	±20	±20	V
Input Capacitance (Ciss) @ Vds	1350 @ 25V	1207 @ 25V	pF
Power Dissipation (Max)	150	125	W
Operating Temperature Range	-55 to 150	-55 to 150	°C
Mounting Type	Surface Mount	Surface Mount	—
Package	TO-263AA	TO-263AA	—
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	—
Product Status	Obsolete	Active	—

Engineering Selection Recommendations

The IXTA2R4N120P is an active product substitute for the obsolete IXTA3N110. Both devices maintain ROHS3 compliance and REACH unaffected status, ensuring regulatory alignment for new designs and legacy system support.

Key Considerations:

The IXTA2R4N120P provides a higher drain-to-source voltage rating (1200V versus 1100V), offering enhanced voltage margin in high-voltage switching applications. However, the continuous drain current is reduced from 3A to 2.4A, and maximum power dissipation decreases from 150W to 125W. These differences require circuit-level evaluation to confirm suitability for the target application.

Both devices share identical gate drive voltage specifications (10V), maximum gate voltage ratings (±20V), and operating temperature ranges (-55°C to 150°C), ensuring compatibility with existing gate driver circuits and thermal management strategies.

The IXTA2R4N120P exhibits lower gate charge (37nC versus 42nC) and input capacitance (1207pF versus 1350pF), resulting in faster switching transitions and reduced gate driver power consumption.

Frequently Asked Questions (FAQ)

Q: Can the IXTA2R4N120P directly replace the IXTA3N110 in existing designs?

A: Direct replacement requires circuit-level analysis. The IXTA2R4N120P has lower continuous drain current (2.4A versus 3A) and reduced power dissipation rating (125W versus 150W). Applications operating near the original 3A specification or 150W dissipation limit require design modification or thermal re-evaluation.

Q: Are the packages physically identical?

A: Both devices use the TO-263AA package with identical pinout and footprint. PCB layout modifications are not required for mechanical compatibility.

Q: What is the impact of the higher Vdss rating on circuit performance?

A: The IXTA2R4N120P's 1200V rating provides additional voltage headroom compared to the 1100V specification of the IXTA3N110. This reduces stress on the device in transient overvoltage conditions but does not alter steady-state circuit behavior in applications designed for 1100V operation.

Q: How do the on-resistance characteristics compare?

A: The IXTA3N110 specifies 4Ohm Rds(On) at 1.5A and 10V gate voltage. The IXTA2R4N120P specifies 7.5Ohm at 500mA and 10V gate voltage. Direct comparison at identical current levels is not possible from the provided specifications. Circuit performance depends on actual operating current and thermal conditions.

Q: Are gate driver circuits compatible between these devices?

A: Yes. Both devices share identical maximum gate voltage (±20V) and drive voltage specifications (10V). Existing gate driver designs require no modification. The lower gate charge of the IXTA2R4N120P (37nC versus 42nC) may reduce gate driver power consumption.

Q: What regulatory compliance applies to both devices?

A: Both the IXTA3N110 and IXTA2R4N120P are ROHS3 compliant and REACH unaffected, meeting current environmental and hazardous substance regulations for electronic components.

Request Quote (Ships tomorrow)

Part Number

Quantity

Company

Contact Name

E-mail

Message