IXTA2N80P Equivalent & Substitute Parts

Part Overview

The IXTA2N80P is an N-Channel MOSFET manufactured by IXYS, rated for 800V drain-to-source voltage with 2A continuous drain current at 25°C. This device is part of the PolarHV™ series and is housed in a TO-263AA surface mount package. The part is currently listed as obsolete, making identification of equivalent and substitute components necessary for ongoing design support, maintenance, and production continuity.

Substiute Parts

IXTA2N80P

IXYSIn Stock: 987IXTA2N80P Datasheet

Current PartRFQ

IXFA4N85X

IXYSIn Stock: 1012IXFA4N85X Datasheet

SimilarRFQ

IRFBE20STRL

Vishay SiliconixIn Stock: 997IRFBE20STRL Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IXTA2N80P is determined by the following critical parameters:

Electrical Compatibility Requirements:

• FET Type: N-Channel (mandatory match)
• Drain to Source Voltage (Vdss): Minimum 800V (equal or higher acceptable)
• Current - Continuous Drain (Id) @ 25°C: Minimum 2A (equal or higher acceptable)
• Operating Temperature Range: -55°C to 150°C (must encompass or match)

Mechanical Compatibility Requirements:

• Mounting Type: Surface Mount (mandatory match)
• Package / Case: TO-263-3, D2PAK compatible footprints (mandatory match)

Compliance Considerations:

• Product Status: Active status preferred for long-term availability
• Moisture Sensitivity Level (MSL): Level 1 (Unlimited) preferred
• REACH Status: REACH Unaffected preferred

Substitute parts must meet or exceed the electrical specifications while maintaining identical or compatible mechanical packaging. Parts that exceed the rated specifications in current capacity, voltage rating, or power dissipation are acceptable for direct substitution provided all other parameters remain compatible.

Parameter Comparison

Engineering Selection Recommendations

IXFA4N85X (IXYS)

The IXFA4N85X is the primary substitute for the IXTA2N80P. This part exceeds the electrical specifications of the original device with a higher drain-to-source voltage rating (850V versus 800V) and increased continuous drain current (3.5A versus 2A). The IXFA4N85X features improved on-resistance characteristics (2.5 Ohm @ 2A, 10V) and significantly higher power dissipation capability (150W versus 70W). The device maintains identical operating temperature range (-55°C to 150°C), identical package compatibility (TO-263-3, D2PAK), and identical moisture sensitivity level (MSL 1, Unlimited). The IXFA4N85X holds active product status and carries RoHS3 compliance, ensuring long-term availability and regulatory alignment. This part is suitable for direct substitution in applications where the original IXTA2N80P was specified.

IRFBE20STRL (Vishay Siliconix)

The IRFBE20STRL is an alternative substitute manufactured by Vishay Siliconix. This part maintains the 800V drain-to-source voltage rating and operates within the identical temperature range (-55°C to 150°C). The continuous drain current rating is 1.8A, which is below the original specification of 2A. The on-resistance is 6.5 Ohm @ 1.1A, 10V, comparable to the original device. The IRFBE20STRL is housed in the same TO-263 (D2PAK) package and maintains MSL 1 (Unlimited) rating. This part holds active product status. However, the IRFBE20STRL is not RoHS compliant and the maximum gate voltage is limited to ±20V compared to ±30V for the original part. The IRFBE20STRL is suitable for substitution in applications where current requirements do not exceed 1.8A and where RoHS compliance is not mandated.

Frequently Asked Questions (FAQ)

Q: Can the IXFA4N85X directly replace the IXTA2N80P in all applications?

A: The IXFA4N85X meets or exceeds all electrical and mechanical specifications of the IXTA2N80P. The higher voltage rating (850V), increased current capacity (3.5A), and improved on-resistance provide enhanced performance margins. Direct substitution is valid for applications designed for the IXTA2N80P. No circuit modifications are required.

Q: What is the primary advantage of the IXFA4N85X over the IRFBE20STRL?

A: The IXFA4N85X provides higher continuous drain current (3.5A versus 1.8A), superior on-resistance characteristics (2.5 Ohm versus 6.5 Ohm), and significantly greater power dissipation capability (150W versus unspecified). The IXFA4N85X also maintains the full ±30V gate voltage rating of the original part, whereas the IRFBE20STRL is limited to ±20V. For applications requiring the full 2A specification or higher, the IXFA4N85X is the preferred choice.

Q: Are the IXFA4N85X and IRFBE20STRL pin-compatible with the IXTA2N80P?

A: Both substitute parts are housed in TO-263-3 (D2PAK) packages with identical pin configurations. The mechanical footprint and lead spacing are compatible with the original IXTA2N80P TO-263AA package. PCB layout modifications are not required for substitution.

Q: Why is the IXTA2N80P listed as obsolete?

A: The IXTA2N80P is part of the PolarHV™ series and has been superseded by newer MOSFET technologies. The IXFA4N85X, part of the HiPerFET™ Ultra X series, represents the current generation of high-voltage N-Channel MOSFETs from IXYS with improved performance characteristics and active manufacturing status.

Q: What is the moisture sensitivity level (MSL) and why does it matter?

A: MSL 1 (Unlimited) indicates that the component has unlimited shelf life and does not require special moisture control during storage or handling. All three parts in this comparison carry MSL 1 rating, ensuring consistent handling requirements across substitution options.

Q: Is RoHS compliance a factor in selecting between these parts?

A: The IXFA4N85X is RoHS3 compliant, while the IRFBE20STRL is not RoHS compliant. For applications or markets requiring RoHS compliance, the IXFA4N85X is the appropriate choice. The original IXTA2N80P does not specify RoHS status.

Q: Can the IRFBE20STRL be used if the application only requires 1.8A?

A: The IRFBE20STRL is suitable for applications where the maximum continuous drain current requirement does not exceed 1.8A. However, the IXFA4N85X remains the preferred substitute due to superior performance margins, higher power dissipation capability, and active product status with RoHS compliance.