IXTA2N100P N-Channel 1000V 2A MOSFET Equivalent & Substitute Parts

Part Overview

The IXTA2N100P is an N-Channel MOSFET manufactured by IXYS, rated for 1000V drain-to-source voltage with 2A continuous drain current at 25°C. This device is packaged in TO-263AA surface mount configuration and is designed for high-voltage switching applications. The part is Active status and ROHS3 compliant with unlimited moisture sensitivity level (MSL 1).

Equivalent and substitute parts are identified based on matching or exceeding critical electrical parameters: drain-to-source voltage rating, continuous drain current capability, gate charge characteristics, and thermal performance. Substitute parts must maintain compatibility with surface mount assembly processes and operate within the same temperature range.

Substiute Parts

IXTA2N100P

IXYSIn Stock: 3172IXTA2N100P Datasheet

Current PartRFQ

STD3NK100Z

STMicroelectronicsIn Stock: 5223STD3NK100Z Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IXTA2N100P is determined by the following critical electrical and mechanical parameters:

Voltage Rating: The substitute part must maintain a Vdss rating of 1000V or higher to ensure equivalent or superior voltage withstand capability.

Continuous Drain Current: The substitute must support a minimum continuous drain current of 2A at 25°C to meet or exceed the original specification.

Gate Charge: Lower gate charge values indicate faster switching performance and reduced drive circuit stress. Substitute parts with gate charge at or below 24.3 nC @ 10V are acceptable.

On-State Resistance (Rds On): Lower Rds On values reduce conduction losses. Substitutes with Rds On at or below 7.5 Ohm @ specified conditions are acceptable.

Thermal Performance: Power dissipation capability must be 86W or higher at case temperature.

Package Compatibility: Surface mount packages including TO-263, DPAK, and equivalent configurations are acceptable for board-level substitution, provided PCB layout accommodates the specific package footprint.

Compliance: All substitute parts must maintain ROHS3 compliance and REACH unaffected status.

The STD3NK100Z from STMicroelectronics meets these substitution criteria with enhanced continuous drain current (2.5A), improved Rds On (6 Ohm), and reduced gate charge (18 nC).

Parameter Comparison

Engineering Selection Recommendations

Primary Substitute: STD3NK100Z

The STD3NK100Z is a direct functional equivalent with performance enhancements. Both devices are Active status products with ROHS3 compliance and unlimited moisture sensitivity level (MSL 1). The STD3NK100Z provides superior electrical characteristics: 25% higher continuous drain current (2.5A vs. 2A), 20% lower on-state resistance (6 Ohm vs. 7.5 Ohm), and 26% lower gate charge (18 nC vs. 24.3 nC). These improvements result in reduced conduction losses and faster switching response.

Package Consideration: The IXTA2N100P uses TO-263AA (D2PAK) packaging, while the STD3NK100Z uses DPAK (TO-252-3) packaging. Both are surface mount configurations with identical lead count (2 leads + tab). PCB layout modification is required to accommodate the different package footprint. The DPAK package is widely supported in modern PCB design tools.

Compliance Status: Both parts maintain identical regulatory compliance: ROHS3 compliant, REACH unaffected, and EAR99 export classification.

Thermal Performance: The STD3NK100Z provides 4W additional power dissipation capability (90W vs. 86W), supporting higher current or duty cycle applications.

Gate Voltage Tolerance: The STD3NK100Z supports ±30V gate voltage compared to ±20V for the IXTA2N100P, providing additional design margin in gate drive circuits.

Frequently Asked Questions (FAQ)

Q: Can the STD3NK100Z directly replace the IXTA2N100P without circuit modification?

A: Electrical substitution is valid based on matching voltage rating (1000V), exceeding continuous drain current requirement (2.5A vs. 2A), and superior switching characteristics. However, PCB layout modification is required due to different package footprints (DPAK vs. D2PAK). Gate drive circuits do not require modification as the STD3NK100Z operates within compatible gate voltage ranges.

Q: What are the key advantages of the STD3NK100Z over the IXTA2N100P?

A: The STD3NK100Z provides three measurable improvements: (1) 25% higher continuous drain current capability (2.5A vs. 2A), enabling operation at higher current levels; (2) 20% lower on-state resistance (6 Ohm vs. 7.5 Ohm), reducing conduction power loss; (3) 26% lower gate charge (18 nC vs. 24.3 nC), enabling faster switching and reduced gate drive power requirements.

Q: Are both parts suitable for the same operating temperature range?

A: Yes. Both the IXTA2N100P and STD3NK100Z operate across the identical temperature range of -55°C to 150°C (junction temperature), ensuring thermal compatibility in equivalent applications.

Q: What is the difference between TO-263 and DPAK packaging?

A: TO-263 (D2PAK) and DPAK (TO-252) are both surface mount packages with 2 leads plus a thermal tab. The primary difference is physical footprint dimensions. TO-263 is larger than DPAK. PCB layout and component placement must be verified for the specific package selected. Both packages provide equivalent thermal and electrical performance characteristics.

Q: Do both parts have the same moisture sensitivity level?

A: Yes. Both the IXTA2N100P and STD3NK100Z are rated MSL 1 (Unlimited), indicating no moisture sensitivity restrictions. Standard handling and storage procedures apply to both devices.

Q: Are there any compliance differences between the two parts?

A: No. Both parts are ROHS3 compliant, REACH unaffected, and classified as EAR99 for export purposes. Regulatory compliance is identical.

Q: What is the significance of lower gate charge in the STD3NK100Z?

A: Lower gate charge (18 nC vs. 24.3 nC) reduces the total charge that must be supplied by the gate drive circuit to switch the device. This results in faster switching transitions, reduced gate drive power dissipation, and improved efficiency in high-frequency switching applications.

Q: Can the IXTA2N100P be used in applications designed for the STD3NK100Z?

A: The IXTA2N100P can be used as a substitute in applications designed for the STD3NK100Z, provided the application does not require the enhanced current capability (2.5A) or the performance benefits of lower gate charge and on-state resistance. The lower continuous drain current rating (2A vs. 2.5A) must be verified against actual circuit requirements.