IXTA2N100 N-Channel MOSFET 1000V 2A Equivalent & Substitute Parts

Part Overview

The IXTA2N100 is an N-Channel MOSFET rated for 1000V drain-to-source voltage with 2A continuous drain current in a Surface Mount TO-263AA package. This device is classified as Last Time Buy, indicating discontinued production with limited remaining inventory. Identification of equivalent and substitute parts is necessary to ensure design continuity and procurement availability for applications requiring this performance class.

Substiute Parts

IXTA2N100

IXYSIn Stock: 911IXTA2N100 Datasheet

Current PartRFQ

IXTA2N100P

IXYSIn Stock: 3172IXTA2N100P Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IXTA2N100 is determined by equivalence in the following critical parameters:

Voltage Rating: Drain-to-source voltage must equal or exceed 1000V to maintain blocking capability in the target application.

Current Rating: Continuous drain current must support 2A at 25°C case temperature to ensure thermal and electrical performance margins.

On-State Resistance (Rds On): Maximum on-state resistance at specified gate and drain conditions must not exceed the original specification to maintain conduction losses within design limits.

Gate Threshold Voltage: Gate threshold voltage must remain within ±20V maximum gate voltage specification to ensure compatible gate drive circuitry.

Package and Mounting: Surface Mount TO-263AA package with identical pinout and thermal characteristics is required for direct board-level substitution.

Compliance: RoHS3 compliance and REACH unaffected status must be maintained for regulatory continuity.

The IXTA2N100P qualifies as a direct substitute based on matching voltage, current, package, and compliance specifications, with minor variations in secondary parameters documented in the comparison table below.

Parameter Comparison

Engineering Selection Recommendations

IXTA2N100P as Primary Substitute:

The IXTA2N100P is the direct equivalent for the IXTA2N100. Both devices share identical voltage and current ratings, gate voltage specifications, and package configuration. The IXTA2N100P carries Active product status with significantly higher inventory availability (3150 pcs vs. 827 pcs), ensuring long-term procurement continuity.

Secondary parameter variations between the two devices are within acceptable engineering tolerances for most applications:

Gate charge increases from 18 nC to 24.3 nC, resulting in slightly longer gate drive times but remaining compatible with standard gate driver circuits rated for 10V operation.

Input capacitance decreases from 825 pF to 655 pF, providing improved high-frequency switching characteristics.

Power dissipation rating decreases from 100W to 86W; thermal design margins must be verified for applications operating at maximum power levels.

On-state resistance increases marginally from 7 Ohm to 7.5 Ohm at different measurement conditions (1A vs. 500mA), with negligible impact on conduction losses in 2A applications.

Both devices maintain ROHS3 compliance and REACH unaffected status, satisfying regulatory requirements without design modification.

Frequently Asked Questions (FAQ)

Q: Can the IXTA2N100P directly replace the IXTA2N100 without PCB modifications?

A: Yes. Both devices use identical TO-263AA Surface Mount packages with matching pinout and thermal interface. No PCB layout changes are required for direct substitution.

Q: What is the significance of the power dissipation difference (100W vs. 86W)?

A: Power dissipation rating reflects the maximum thermal capability under specified conditions. Applications operating below 86W dissipation experience no functional impact. Designs requiring sustained operation above 86W must verify thermal management adequacy with the IXTA2N100P.

Q: How do the gate charge differences affect gate driver selection?

A: Gate charge increases from 18 nC to 24.3 nC. Standard gate drivers rated for 10V operation accommodate this variation. Gate drive current and timing calculations should be recalculated for designs with marginal gate driver capacity.

Q: Are there compliance or certification differences between the two parts?

A: No. Both IXTA2N100 and IXTA2N100P maintain identical RoHS3 compliance and REACH unaffected status. No regulatory documentation changes are required.

Q: Why is the IXTA2N100 classified as Last Time Buy?

A: Last Time Buy status indicates the manufacturer has discontinued production. Existing inventory is available for final orders only. The IXTA2N100P, with Active status, represents the current production equivalent for ongoing procurement.

Q: What is the impact of reduced input capacitance (825 pF to 655 pF)?

A: Reduced input capacitance improves switching speed and reduces gate drive power consumption. This represents a performance enhancement with no negative impact on circuit operation.

Q: Are thermal characteristics identical between the two packages?

A: Both devices use TO-263AA packages with identical thermal interface specifications. Thermal performance depends on PCB layout, copper area, and heat sink design rather than package differences.