IXTA230N075T2 Equivalent & Substitute Parts

Part Overview

The IXTA230N075T2 is an N-Channel MOSFET manufactured by IXYS, rated for 75V drain-to-source voltage with 230A continuous drain current at 25°C. This device is part of the TrenchT2™ series and is housed in a TO-263AA surface mount package. The component is Active in product status and RoHS3 compliant, making it suitable for high-current switching applications in industrial and power conversion systems.

Substitute parts are necessary when the primary component experiences supply constraints, extended lead times, or when design requirements permit operation within relaxed electrical parameters. Equivalent devices must maintain compatibility across critical electrical specifications including voltage rating, current handling capability, gate charge characteristics, and thermal performance while maintaining identical or compatible package configurations.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	75	V
Continuous Drain Current (Id) @ 25°C	230	A (Tc)
Rds On (Max) @ 50A, 10V	4.2	mOhm
Gate Charge (Qg) @ 10V	178	nC
Input Capacitance (Ciss) @ 25V	10500	pF
Power Dissipation (Max)	480	W (Tc)
Operating Temperature Range	-55 to 175	°C (TJ)
Package Type	TO-263-3 / D2PAK	Surface Mount
FET Type	N-Channel	MOSFET
Vgs (Max)	±20	V

Substitute Part Grouping Explanation

Substitution eligibility for the IXTA230N075T2 is determined by the following critical parameters:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): Must equal or exceed 75V
Continuous Drain Current (Id): Must equal or exceed 230A at 25°C for direct replacement; lower ratings acceptable only if application permits reduced current capacity
Package Type: Must be TO-263-3, D2PAK, or TO-263AB surface mount configuration
Gate Charge (Qg): Lower values preferred for faster switching; higher values acceptable within thermal constraints
Rds On: Lower on-resistance values reduce conduction losses; values within ±10% of specification maintain thermal equivalence
Operating Temperature: Must support -55°C to 175°C range
Compliance: RoHS3 compliant, REACH unaffected status required

Substitution Categories:

Category A - Full Electrical Equivalents (75V, ≥170A): Devices rated 75V with drain current ≥170A maintain voltage and thermal performance within acceptable margins. These include IRFS3207TRLPBF (170A) and STB160N75F3 (120A at 75V).

Category B - Reduced Current Capacity (75V, <170A): Devices rated 75V with drain current below 170A operate within voltage specifications but with reduced current handling. IRFS3207ZTRRPBF (120A at 75V) falls into this category.

Category C - Reduced Voltage Rating (60V, ≤120A): Devices rated 60V with drain current ≤120A operate at lower voltage stress but reduced current capacity. IRFS3306TRLPBF (60V, 120A) and IRFS7540TRLPBF (60V, 110A) are suitable only for applications with maximum operating voltage ≤60V.

Category D - Reduced Voltage and Current (55V, ≤90A): Devices rated 55V with drain current ≤90A represent the most relaxed electrical parameters. NP89N055PUK-E1-AY (55V, 90A) is suitable only for applications with maximum operating voltage ≤55V and current ≤90A.

All substitute parts maintain identical gate voltage specifications (±20V), operating temperature range (-55°C to 175°C), and surface mount package compatibility.

Parameter Comparison

Parameter	IXTA230N075T2	IRFS3207TRLPBF	IRFS3207ZTRRPBF	IRFS3306TRLPBF	IRFS7540TRLPBF	NP89N055PUK-E1-AY	STB160N75F3
Manufacturer	IXYS	Infineon	Infineon	Infineon	Infineon	Renesas	STMicroelectronics
Vdss (V)	75	75	75	60	60	55	75
Id @ 25°C (A)	230	170	120	120	110	90	120
Rds On (Max) (mOhm)	4.2 @ 50A	4.5 @ 75A	4.1 @ 75A	4.2 @ 75A	5.1 @ 65A	4.0 @ 45A	4.0 @ 60A
Qg (Max) @ 10V (nC)	178	260	170	120	130	102	85
Ciss (Max) (pF)	10500 @ 25V	7600 @ 50V	6920 @ 50V	4520 @ 50V	4555 @ 25V	6000 @ 25V	6750 @ 25V
Power Dissipation (Max) (W)	480	300	300	230	160	147	330
Operating Temperature (°C)	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 175	to 175	-55 to 175
Package	TO-263AA	D2PAK	TO-263	D2PAK	PG-TO263-3	TO-263-3	D2PAK
Vgs (Max) (V)	±20	±20	±20	±20	±20	±20	±20
RoHS Status	ROHS3	ROHS3	ROHS3	ROHS3	ROHS3	ROHS3	ROHS3
Product Status	Active	Active	Active	Active	Active	Active	Active

Engineering Selection Recommendations

For Direct Replacement (75V, ≥170A Current Requirement):

IRFS3207TRLPBF and STB160N75F3 maintain the 75V voltage rating with acceptable current capacity. IRFS3207TRLPBF provides 170A continuous current, representing a 26% reduction from the primary device but sufficient for applications not requiring the full 230A specification. STB160N75F3 provides 120A at 75V with superior power dissipation (330W vs. 480W) and lower gate charge (85nC vs. 178nC), enabling faster switching characteristics. Both devices are Active status, RoHS3 compliant, and available in compatible D2PAK packages.

For Reduced Current Applications (75V, 120A):

IRFS3207ZTRRPBF operates at 75V with 120A continuous current and exhibits lower gate charge (170nC) compared to the primary device, improving switching speed. This device is suitable for applications where 120A current capacity is acceptable and thermal management is not constrained by the 300W power dissipation limit.

For Lower Voltage Applications (60V Maximum):

IRFS3306TRLPBF and IRFS7540TRLPBF are restricted to applications with maximum operating voltage of 60V. IRFS3306TRLPBF provides 120A at 60V with 230W power dissipation and minimal gate charge (120nC). IRFS7540TRLPBF provides 110A at 60V with 160W power dissipation. Both devices are Active status and RoHS3 compliant.

For Lowest Voltage Applications (55V Maximum):

NP89N055PUK-E1-AY operates at 55V with 90A continuous current. This device is restricted to applications with maximum operating voltage of 55V and current requirements not exceeding 90A. The device exhibits the lowest gate charge (102nC) among all substitutes, enabling the fastest switching response.

Compliance and Availability:

All substitute parts maintain Active product status, RoHS3 compliance, REACH unaffected designation, and identical gate voltage specifications (±20V). All devices support the full operating temperature range of -55°C to 175°C. Package compatibility is maintained across all substitutes in TO-263-3 or D2PAK configurations.

Frequently Asked Questions (FAQ)

Q: Can IRFS3207TRLPBF directly replace IXTA230N075T2 in all applications?

A: IRFS3207TRLPBF maintains the 75V voltage rating and provides 170A continuous current, representing 74% of the primary device's 230A specification. Direct replacement is possible only in applications where the circuit design does not require the full 230A current capacity. Thermal analysis must confirm that the reduced power dissipation rating (300W vs. 480W) is acceptable for the application's duty cycle and ambient conditions.

Q: What is the primary difference between IRFS3207TRLPBF and IRFS3207ZTRRPBF?

A: Both devices are manufactured by Infineon and rated at 75V. IRFS3207TRLPBF provides 170A continuous current with 260nC gate charge, while IRFS3207ZTRRPBF provides 120A continuous current with 170nC gate charge. The lower gate charge in IRFS3207ZTRRPBF enables faster switching transitions but at reduced current capacity. Selection depends on whether the application requires 170A or 120A current handling.

Q: Can IRFS3306TRLPBF be used in a circuit designed for 75V operation?

A: No. IRFS3306TRLPBF is rated for maximum 60V drain-to-source voltage. Using this device in a 75V circuit will result in device failure due to voltage overstress. This device is suitable only for applications with maximum operating voltage of 60V or lower.

Q: What are the thermal implications of substituting STB160N75F3 for IXTA230N075T2?

A: STB160N75F3 has a maximum power dissipation rating of 330W compared to 480W for the primary device. This represents a 31% reduction in thermal capacity. The substitute device is suitable only if thermal analysis confirms that the application's power dissipation remains below 330W under all operating conditions. The lower gate charge (85nC vs. 178nC) reduces switching losses, partially offsetting the reduced power rating.

Q: Are all substitute parts available in the same package as IXTA230N075T2?

A: All substitute parts are housed in TO-263-3 or D2PAK surface mount packages, which are mechanically and electrically compatible with the primary device's TO-263AA package. Pin configurations and lead spacing are identical, enabling direct PCB-level substitution without layout modifications.

Q: What is the significance of gate charge (Qg) differences among substitute parts?

A: Gate charge determines the energy required to switch the device on and off. Lower gate charge values (such as STB160N75F3 at 85nC) reduce switching losses and enable higher switching frequencies. Higher gate charge values (such as IRFS3207TRLPBF at 260nC) increase switching losses but may provide improved noise immunity. Selection depends on the circuit's switching frequency and gate driver capability.

Q: Can NP89N055PUK-E1-AY be used as a substitute in a 75V application?

A: No. NP89N055PUK-E1-AY is rated for maximum 55V drain-to-source voltage. This device is suitable only for applications with maximum operating voltage of 55V or lower. Using this device in a 75V circuit will result in immediate device failure.

Q: What compliance certifications are maintained across all substitute parts?

A: All substitute parts maintain RoHS3 compliance, REACH unaffected status, and identical EAR99 ECCN classification. All devices are classified as Moisture Sensitivity Level 1 (Unlimited), indicating no moisture sensitivity constraints during storage or handling.

Q: How does on-resistance (Rds On) variation affect circuit performance?

A: On-resistance determines conduction losses during the device's on-state. Lower Rds On values reduce power dissipation and heat generation. The primary device specifies 4.2mOhm at 50A and 10V. Substitute devices range from 4.0mOhm to 5.1mOhm at their respective rated currents. Variations within ±10% of the primary specification maintain thermal equivalence; higher values increase conduction losses proportionally.

Q: Are all substitute parts suitable for high-frequency switching applications?

A: Suitability for high-frequency operation depends on gate charge and input capacitance. Devices with lower gate charge (STB160N75F3 at 85nC, NP89N055PUK-E1-AY at 102nC) are preferred for frequencies above 100kHz. Devices with higher gate charge (IRFS3207TRLPBF at 260nC) are better suited for lower frequency applications below 50kHz to minimize switching losses.

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