IXTA220N075T N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The IXTA220N075T is an N-Channel MOSFET manufactured by IXYS, rated for 75V drain-to-source voltage with 220A continuous drain current at 25°C. The device is housed in a TO-263AA surface mount package and is part of the TrenchMV™ series. This part is currently classified as obsolete, making identification of functionally equivalent alternatives necessary for ongoing design support and production continuity.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	75	V
Continuous Drain Current (Id) @ 25°C	220	A
On-State Resistance (Rds On) @ 25A, 10V	4.5	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	4	V
Gate Charge (Qg) @ 10V	165	nC
Maximum Gate Voltage (Vgs)	±20	V
Input Capacitance (Ciss) @ 25V	7700	pF
Power Dissipation (Max)	480	W
Operating Temperature Range	-55 to 175	°C
Package Type	TO-263-3 (D2PAK)	—
Mounting Type	Surface Mount	—

Substitute Part Grouping Explanation

Substitution of the IXTA220N075T is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): Must equal or exceed 75V
Continuous Drain Current (Id): Must equal or exceed 220A at 25°C
On-State Resistance (Rds On): Must be compatible with 4.5mOhm specification
Gate Threshold Voltage (Vgs(th)): Must be within ±20V maximum gate voltage range
Package Type: Must be TO-263-3 (D2PAK) surface mount configuration

Substitution Logic: Parts are grouped into two categories based on electrical performance alignment:

Category A - Full Electrical Equivalents (Vdss ≥ 75V, Id ≥ 170A): These devices maintain the 75V voltage rating and deliver comparable or higher current capacity, ensuring direct functional replacement in applications requiring the full performance envelope of the IXTA220N075T.

Category B - Reduced Current Alternatives (Vdss ≥ 60V, Id ≥ 100A): These devices operate at lower voltage ratings (60V) or reduced current ratings (100A-120A) and are suitable only for applications where the full 220A capacity is not required. These substitutes are not interchangeable in designs demanding the complete electrical specification of the original part.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On @ 10V (mOhm)	Vgs(th) (V)	Qg @ 10V (nC)	Vgs Max (V)	Power Dissipation (W)	Package	Status
IXTA220N075T	IXYS	75	220	4.5	4	165	±20	480	TO-263AA	Obsolete
IRFS3207TRLPBF	Infineon	75	170	4.5	4	260	±20	300	D2PAK	Active
IRFS3207ZTRRPBF	Infineon	75	120	4.1	4	170	±20	300	TO-263	Active
IRFS3306TRLPBF	Infineon	60	120	4.2	4	120	±20	230	D2PAK	Active
IRFS7540TRLPBF	Infineon	60	110	5.1	3.7	130	±20	160	D2PAK	Active
BUK764R4-60E,118	Nexperia	60	100	4.5	4	82	±20	234	D2PAK	Active
BUK964R8-60E,118	Nexperia	60	100	4.4	2.1	65	±10	234	D2PAK	Obsolete
PSMN005-75B,118	Nexperia	75	75	5	4	165	±20	230	D2PAK	Active
PSMN4R4-80BS,118	Nexperia	80	100	4.5	4	125	±20	306	D2PAK	Active

Engineering Selection Recommendations

Primary Substitute - IRFS3207TRLPBF (Infineon Technologies)

The IRFS3207TRLPBF is the closest functional equivalent to the IXTA220N075T. It maintains the 75V Vdss rating and delivers 170A continuous drain current, representing 77% of the original part's current capacity. The device features identical 4.5mOhm on-state resistance at the specified gate voltage and threshold voltage. The IRFS3207TRLPBF is manufactured by Infineon Technologies, carries Active product status, and holds RoHS3 compliance certification. This part is suitable for applications where current requirements do not exceed 170A.

Secondary Substitute - IRFS3207ZTRRPBF (Infineon Technologies)

The IRFS3207ZTRRPBF maintains the 75V voltage rating with 120A continuous drain current. It features superior on-state resistance of 4.1mOhm and is rated for 300W power dissipation. This device is classified as Active and RoHS3 compliant. Selection of this part is appropriate only for applications requiring 75V operation with current demands below 120A.

Voltage-Reduced Alternatives - IRFS3306TRLPBF, IRFS7540TRLPBF, BUK764R4-60E,118, PSMN4R4-80BS,118

These devices operate at reduced voltage ratings (60V or 80V) compared to the original 75V specification. The IRFS3306TRLPBF and IRFS7540TRLPBF are rated for 120A and 110A respectively at 60V. The BUK764R4-60E,118 delivers 100A at 60V and carries AEC-Q101 automotive qualification. The PSMN4R4-80BS,118 provides 100A at 80V with enhanced power dissipation of 306W. These substitutes are applicable only in designs where the application voltage does not exceed the device rating and current requirements are met.

Not Recommended - BUK964R8-60E,118, PSMN005-75B,118

The BUK964R8-60E,118 is classified as Obsolete and features a reduced maximum gate voltage of ±10V, limiting compatibility with standard gate drive circuits. The PSMN005-75B,118, while maintaining 75V rating, delivers only 75A continuous current, representing 34% of the original specification and is unsuitable for high-current applications.

Frequently Asked Questions (FAQ)

Q: Can the IRFS3207TRLPBF directly replace the IXTA220N075T in all applications?

A: The IRFS3207TRLPBF is electrically compatible for applications requiring continuous drain current up to 170A at 75V. Applications demanding the full 220A capacity of the original part require verification that the reduced current rating does not compromise system performance. Both devices share identical 4.5mOhm on-state resistance and ±20V gate voltage range.

Q: What is the primary limitation of 60V-rated substitutes such as IRFS3306TRLPBF?

A: The 60V drain-to-source voltage rating of these devices is 15V lower than the original IXTA220N075T specification. These substitutes are suitable only for applications where the maximum operating voltage does not exceed 60V. Use in circuits designed for 75V operation creates risk of device failure.

Q: Are all substitute parts available in the same TO-263 package?

A: All listed substitute parts are housed in D2PAK (TO-263-3) surface mount packages, ensuring mechanical and thermal compatibility with the original IXTA220N075T. Pin configuration and PCB footprint remain identical across all substitutes.

Q: Which substitute offers the best compliance certifications?

A: The BUK764R4-60E,118 carries AEC-Q101 automotive qualification in addition to RoHS3 compliance, making it suitable for automotive applications. The IRFS3207TRLPBF and IRFS3207ZTRRPBF hold RoHS3 compliance and are manufactured by Infineon Technologies with Active product status.

Q: Can PSMN005-75B,118 be used as a substitute despite its lower current rating?

A: The PSMN005-75B,118 maintains the 75V voltage rating and identical gate charge specification (165nC @ 10V) but delivers only 75A continuous current. This device is suitable only for applications where current requirements do not exceed 75A and represents a significant derating from the original 220A specification.

Q: What is the significance of the Obsolete product status for BUK964R8-60E,118?

A: The BUK964R8-60E,118 is classified as Obsolete, indicating discontinued manufacturing and limited long-term availability. Additionally, its ±10V maximum gate voltage is lower than the ±20V standard, potentially creating incompatibility with existing gate drive circuits. Active alternatives such as IRFS3207TRLPBF are preferred for new designs.

Q: How does gate charge (Qg) affect substitution suitability?

A: Gate charge determines the energy required to switch the device and influences gate drive circuit design. The IXTA220N075T specifies 165nC @ 10V. The IRFS3207TRLPBF requires 260nC, indicating higher switching energy demand. Applications with fixed gate drive circuits must verify compatibility with the substitute's gate charge specification.

Q: Are there current derating considerations when selecting a substitute?

A: Yes. The IXTA220N075T is rated for 220A continuous drain current. Substitutes with lower current ratings (IRFS3207ZTRRPBF at 120A, IRFS3306TRLPBF at 120A, IRFS7540TRLPBF at 110A) require verification that the application's maximum current demand does not exceed the substitute's rating. Operating above rated current causes thermal stress and reduced device lifetime.

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