IXTA18P10T P-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The IXTA18P10T is an active P-Channel MOSFET manufactured by IXYS, designed for surface mount applications in the TO-263AA package. This device operates at 100V drain-to-source voltage with a continuous drain current rating of 18A at 25°C and dissipates up to 83W at the case temperature. The part is built on IXYS's TrenchP™ technology platform and is ROHS3 compliant with unlimited moisture sensitivity rating.

Equivalent and substitute parts are identified when design requirements necessitate alternative sourcing, inventory constraints, or when performance parameters of candidate parts meet or exceed the electrical and mechanical specifications of the primary component.

Substiute Parts

IXTA18P10T
IXYSIn Stock: 23263IXTA18P10T Datasheet
IXTA18P10T
Current Part
IRF9540NSTRLPBF
Infineon TechnologiesIn Stock: 41464IRF9540NSTRLPBF Datasheet
IRF9540NSTRLPBF
Similar

Key Parameters

Parameter Value Unit
FET Type P-Channel
Drain to Source Voltage (Vdss) 100 V
Continuous Drain Current (Id) @ 25°C 18 A (Tc)
On-State Resistance (Rds On Max) @ Id, Vgs 120 mOhm @ 9A, 10V
Gate Threshold Voltage (Vgs(th) Max) @ Id 4.5 V @ 250µA
Power Dissipation (Max) 83 W (Tc)
Operating Temperature Range -55 to 150 °C (TJ)
Package Type TO-263-3 / D2PAK Surface Mount
RoHS Status ROHS3 Compliant

Substitute Part Grouping Explanation

Substitution of the IXTA18P10T is determined by equivalence across the following critical parameters:

Electrical Equivalence Criteria:

  • FET Type: P-Channel topology
  • Drain-to-Source Voltage (Vdss): 100V minimum rating
  • Continuous Drain Current (Id): 18A minimum at 25°C
  • On-State Resistance (Rds On): Performance at specified gate voltage and current
  • Gate Threshold Voltage (Vgs(th)): Operating point compatibility
  • Power Dissipation: Thermal handling capability

Mechanical Equivalence Criteria:

  • Package Type: TO-263-3 / D2PAK surface mount configuration
  • Pin Configuration: 2 Leads + Tab arrangement
  • Mounting Type: Surface mount compatibility

Compliance Criteria:

  • RoHS3 compliance status
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • REACH and ECCN classification alignment

The IRF9540NSTRLPBF meets these substitution criteria through matching P-Channel topology, 100V Vdss rating, current capability exceeding 18A, compatible D2PAK packaging, and equivalent compliance certifications.

Parameter Comparison

Parameter IXTA18P10T IRF9540NSTRLPBF Unit
Manufacturer IXYS Infineon Technologies
FET Type P-Channel P-Channel
Drain to Source Voltage (Vdss) 100 100 V
Continuous Drain Current (Id) @ 25°C 18 23 A (Tc)
Rds On (Max) @ Id, Vgs 120 @ 9A, 10V 117 @ 14A, 10V mOhm
Gate Threshold Voltage (Vgs(th) Max) @ Id 4.5 @ 250µA 4.0 @ 250µA V
Gate Charge (Qg) (Max) @ Vgs 39 @ 10V 110 @ 10V nC
Input Capacitance (Ciss) (Max) @ Vds 2100 @ 25V 1450 @ 25V pF
Power Dissipation (Max) 83 (Tc) 110 (Tc) W
Operating Temperature Range -55 to 150 -55 to 150 °C (TJ)
Package Type TO-263-3 / D2PAK TO-263-3 / D2PAK Surface Mount
Product Status Active Active
RoHS Status ROHS3 Compliant ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited)
REACH Status REACH Unaffected REACH Unaffected

Engineering Selection Recommendations

IXTA18P10T (Primary Part)

The IXTA18P10T remains the specified component when IXYS TrenchP™ technology platform characteristics are required. This part is active in production with full inventory availability (23,200 pcs). It meets all ROHS3 compliance requirements and carries unlimited moisture sensitivity rating suitable for standard manufacturing environments.

IRF9540NSTRLPBF (Substitute Part)

The IRF9540NSTRLPBF is a direct substitute when Infineon HEXFET® technology is acceptable or when higher current capability (23A vs. 18A) and increased power dissipation (110W vs. 83W) provide design margin. This part is also active in production with higher inventory availability (41,400 pcs). Both parts share identical voltage ratings, compatible D2PAK packaging, equivalent operating temperature ranges, and matching compliance certifications (ROHS3, REACH Unaffected, EAR99 ECCN classification).

The substitute part exhibits lower gate threshold voltage (4.0V vs. 4.5V) and reduced input capacitance (1450 pF vs. 2100 pF), which may influence gate drive circuit design. Gate charge is higher (110 nC vs. 39 nC), requiring consideration in switching speed applications.

Frequently Asked Questions (FAQ)

Q: Can the IRF9540NSTRLPBF directly replace the IXTA18P10T in existing designs?

A: Yes, the IRF9540NSTRLPBF is electrically and mechanically compatible. Both parts are P-Channel MOSFETs with 100V Vdss rating, operate across the same temperature range (-55°C to 150°C), and use identical TO-263-3 / D2PAK surface mount packaging. The substitute part exceeds the current and power dissipation specifications of the primary part.

Q: What are the key differences between these two parts?

A: The primary differences are manufacturer technology platform (IXYS TrenchP™ vs. Infineon HEXFET®), continuous drain current rating (18A vs. 23A), power dissipation capability (83W vs. 110W), gate charge (39 nC vs. 110 nC), and input capacitance (2100 pF vs. 1450 pF). Both parts meet identical voltage and temperature specifications.

Q: Are there packaging differences between the IXTA18P10T and IRF9540NSTRLPBF?

A: Both parts use the TO-263-3 / D2PAK surface mount package with 2 leads plus tab configuration. The primary part is supplied in tube packaging, while the substitute is available in cut tape and digi-reel formats. Pin-to-pin compatibility is maintained.

Q: Do both parts meet the same compliance standards?

A: Yes. Both the IXTA18P10T and IRF9540NSTRLPBF are ROHS3 compliant, REACH unaffected, carry EAR99 ECCN classification, and share HTSUS code 8541.29.0095. Both have unlimited moisture sensitivity rating (MSL 1).

Q: Which part should be selected for new designs?

A: Selection depends on design requirements and sourcing strategy. The IRF9540NSTRLPBF offers higher current and power dissipation ratings with greater inventory availability. The IXTA18P10T is appropriate when IXYS technology platform characteristics are specified or when lower gate charge is advantageous for gate drive circuit optimization.

Q: How do the gate charge specifications affect circuit design?

A: The IXTA18P10T has lower gate charge (39 nC vs. 110 nC), resulting in faster switching transitions and reduced gate drive power requirements. The IRF9540NSTRLPBF's higher gate charge may require gate drive circuits with higher current capability or longer switching times, depending on the application frequency and drive voltage.

Q: Are there thermal management considerations when substituting these parts?

A: The IRF9540NSTRLPBF has higher power dissipation capability (110W vs. 83W), allowing operation at higher power levels or with reduced thermal management requirements. Both parts operate across identical temperature ranges and use the same package, so PCB thermal design considerations remain similar.

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