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IXTA15P15T P-Channel MOSFET 150V 15A Equivalent & Substitute Parts
Part Overview
The IXTA15P15T is an active P-Channel MOSFET manufactured by IXYS, designed for surface mount applications in the TO-263AA package. This device operates at 150V drain-to-source voltage with a continuous drain current rating of 15A at 25°C and dissipates up to 150W. The part is built on IXYS's TrenchP™ technology platform and is ROHS3 compliant with unlimited moisture sensitivity rating.
Substitute parts become necessary when the primary part reaches end-of-life status, inventory constraints occur, or design requirements necessitate alternative electrical or thermal characteristics within compatible parameter ranges.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Drain-to-Source Voltage (Vdss) | 150 | V |
| Continuous Drain Current (Id) @ 25°C | 15 | A |
| On-State Resistance (Rds On) @ 7A, 10V | 240 | mOhm |
| Gate Threshold Voltage (Vgs(th)) @ 250µA | 4.5 | V |
| Gate Charge (Qg) @ 10V | 48 | nC |
| Power Dissipation (Max) | 150 | W |
| Operating Temperature Range | -55 to 150 | °C |
| Package Type | TO-263-3 (D2PAK) | — |
| FET Channel Type | P-Channel | — |
Substitute Part Grouping Explanation
Substitution eligibility for P-Channel MOSFETs is determined by the following critical parameters:
Voltage Rating Compatibility: The substitute part must maintain equal or greater Vdss rating (150V minimum) to ensure safe operation in the target circuit.
Current Capacity: The substitute part's continuous drain current rating must meet or exceed the application requirement. The IXTA15P15T specifies 15A; substitute parts with 13A or higher ratings are acceptable depending on thermal management and duty cycle considerations.
On-State Resistance (Rds On): Lower Rds On values reduce conduction losses and heat generation. The IXTA15P15T specifies 240mOhm maximum; substitute parts with equal or lower Rds On values provide equivalent or improved performance.
Gate Threshold Voltage (Vgs(th)): Must be compatible with the gate drive voltage available in the circuit. The IXTA15P15T specifies 4.5V maximum; substitute parts with similar or lower thresholds ensure reliable switching.
Package Compatibility: Both the main part and substitute must use compatible surface mount packages (TO-263-3, D2PAK) to ensure mechanical fit and thermal interface compatibility.
Temperature Range: The substitute part's operating temperature range must encompass or exceed the application's thermal requirements.
Compliance Status: RoHS3 compliance and REACH status must be maintained for regulated applications.
The IRF6215STRLPBF meets these substitution criteria with matching voltage rating, compatible package, and comparable electrical characteristics, though with reduced current capacity (13A vs. 15A) and higher Rds On (290mOhm vs. 240mOhm).
Parameter Comparison
| Parameter | IXTA15P15T (Main) | IRF6215STRLPBF (Substitute) | Unit |
|---|---|---|---|
| Manufacturer | IXYS | Infineon Technologies | — |
| Drain-to-Source Voltage (Vdss) | 150 | 150 | V |
| Continuous Drain Current (Id) @ 25°C | 15 | 13 | A |
| On-State Resistance (Rds On) @ 10V | 240 @ 7A | 290 @ 6.6A | mOhm |
| Gate Threshold Voltage (Vgs(th)) @ 250µA | 4.5 | 4.0 | V |
| Gate Charge (Qg) @ 10V | 48 | 66 | nC |
| Maximum Gate Voltage (Vgs) | ±15 | ±20 | V |
| Input Capacitance (Ciss) @ 25V | 3650 | 860 | pF |
| Power Dissipation (Max) | 150 | 110 | W |
| Operating Temperature Range | -55 to 150 | -55 to 175 | °C |
| Package Type | TO-263AA | D2PAK | — |
| Product Status | Active | Obsolete | — |
| RoHS Status | ROHS3 Compliant | ROHS3 Compliant | — |
Engineering Selection Recommendations
Primary Part (IXTA15P15T): This part maintains active product status with full manufacturer support and 801 units in current inventory. It is the preferred selection for new designs and applications requiring maximum current capacity (15A) and lowest on-state resistance (240mOhm). ROHS3 compliance and unlimited moisture sensitivity rating support high-reliability applications.
Substitute Part (IRF6215STRLPBF): This Infineon part carries obsolete product status, indicating discontinued manufacturing and limited long-term availability. However, it remains suitable for legacy system maintenance and repair applications where inventory exists (3900 units available). The substitute provides equivalent voltage rating and compatible D2PAK packaging but with reduced current capacity (13A) and higher on-state resistance (290mOhm). The extended operating temperature range (-55°C to 175°C vs. -55°C to 150°C) offers thermal margin in high-temperature environments. ROHS3 compliance maintains regulatory compatibility.
Selection Criteria:
For applications requiring 15A continuous current capacity, the IXTA15P15T is the only suitable choice among these parts.
For applications requiring 13A or less continuous current, the IRF6215STRLPBF provides functional equivalence with trade-offs in conduction losses and power dissipation.
The higher gate charge (66nC vs. 48nC) of the substitute part requires verification of gate drive circuit capability to ensure adequate switching speed.
The lower input capacitance (860pF vs. 3650pF) of the substitute part may improve switching performance in certain circuit topologies.
Frequently Asked Questions (FAQ)
Q: Can the IRF6215STRLPBF directly replace the IXTA15P15T in all applications?
A: Direct replacement is possible only in applications where continuous drain current does not exceed 13A. The substitute part's higher on-state resistance (290mOhm vs. 240mOhm) increases conduction losses by approximately 21%, requiring thermal analysis to confirm adequate heat dissipation. Gate drive circuits must supply sufficient current to charge the higher gate charge (66nC vs. 48nC) within the required switching time.
Q: Are the TO-263AA and D2PAK packages mechanically compatible?
A: Both packages are variants of the TO-263 family with identical lead spacing and mounting footprint. The TO-263AA and D2PAK designations refer to the same physical package configuration (2 leads plus tab). PCB layouts designed for one package accommodate the other without modification.
Q: What is the impact of the 50mOhm increase in on-state resistance?
A: At 13A continuous current, the IRF6215STRLPBF dissipates approximately 49W (13² × 0.290) compared to 52W for the IXTA15P15T at 15A (15² × 0.240). The absolute power difference is application-dependent. Thermal management must account for the substitute part's lower maximum power dissipation rating (110W vs. 150W).
Q: Why does the IRF6215STRLPBF have lower input capacitance despite similar voltage rating?
A: Input capacitance (Ciss) is determined by die geometry and process technology. The Infineon HEXFET® process yields lower capacitance than the IXYS TrenchP™ process at equivalent voltage ratings. Lower Ciss reduces gate charge requirements and improves switching speed, partially offsetting the higher gate charge specification.
Q: Is the obsolete status of the IRF6215STRLPBF a concern for new designs?
A: Yes. Obsolete parts have discontinued manufacturing and limited availability. New designs must use the active IXTA15P15T. The IRF6215STRLPBF is suitable only for maintenance and repair of existing systems where inventory exists or can be sourced from secondary markets.
Q: What is the significance of the ±20V maximum gate voltage on the substitute part?
A: The IRF6215STRLPBF permits ±20V gate drive compared to ±15V for the IXTA15P15T. This provides additional margin in gate drive circuits but does not affect substitution compatibility. Existing circuits designed for ±15V operation function correctly with the substitute part.
Q: How do the operating temperature ranges affect substitution?
A: The IXTA15P15T operates to 150°C junction temperature; the IRF6215STRLPBF extends to 175°C. For applications operating near the upper thermal limit of the main part, the substitute provides 25°C additional margin. Conversely, applications with strict thermal budgets may find the substitute's lower power dissipation rating (110W vs. 150W) limiting.
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