IXTA110N12T2 N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The IXTA110N12T2 is an N-Channel MOSFET manufactured by IXYS, rated for 120V drain-to-source voltage with 110A continuous drain current at 25°C. This device is housed in a TO-263AA surface mount package and belongs to the TrenchT2™ series. The part is currently classified as obsolete, necessitating identification of functionally equivalent alternatives for ongoing design support and procurement.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	120	V
Continuous Drain Current (Id) @ 25°C	110	A (Tc)
Rds On (Max) @ Id, Vgs	14	mOhm @ 55A, 10V
Gate Charge (Qg) (Max) @ Vgs	120	nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	6570	pF @ 25V
Power Dissipation (Max)	517	W (Tc)
Operating Temperature Range	-55 to 175	°C (TJ)
Package Type	TO-263AA (D2PAK)	Surface Mount
Vgs (Max)	±20	V

Substitute Part Grouping Explanation

Substitution of the IXTA110N12T2 is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): Must equal or exceed 120V
Package Type: Must be TO-263AA or equivalent D2PAK surface mount configuration
Gate-Source Voltage (Vgs): Must support ±20V maximum rating
Operating Temperature Range: Must span -55°C to 175°C
FET Type: N-Channel MOSFET technology

Secondary Compatibility Factors:

Continuous drain current capability
On-state resistance (Rds On) characteristics
Gate charge and input capacitance specifications
Power dissipation rating

The substitute parts listed below maintain compatibility across these core parameters while offering variations in current handling capacity and thermal performance.

Parameter Comparison

Parameter	IXTA110N12T2	IXTA80N12T2	IPB038N12N3GATMA1	IPB144N12N3GATMA1
Manufacturer	IXYS	IXYS	Infineon Technologies	Infineon Technologies
Vdss (V)	120	120	120	120
Id @ 25°C (A)	110 (Tc)	80 (Tc)	120 (Tc)	56 (Ta)
Rds On (Max) (mOhm)	14 @ 55A, 10V	17 @ 40A, 10V	3.8 @ 100A, 10V	14.4 @ 56A, 10V
Gate Charge Qg (nC)	120 @ 10V	80 @ 10V	211 @ 10V	49 @ 10V
Input Capacitance Ciss (pF)	6570 @ 25V	4740 @ 25V	13800 @ 60V	3220 @ 60V
Power Dissipation (W)	517 (Tc)	325 (Tc)	300 (Tc)	107 (Tc)
Operating Temperature (°C)	-55 to 175	-55 to 175	-55 to 175	-55 to 175
Package	TO-263AA	TO-263AA	PG-TO263-3	PG-TO263-3
Vgs (Max) (V)	±20	±20	±20	±20
Product Status	Obsolete	Active	Active	Active

Engineering Selection Recommendations

IXTA80N12T2 (IXYS)

The IXTA80N12T2 is a direct form-fit substitute within the same IXYS TrenchT2™ series. It maintains identical voltage rating (120V Vdss) and package configuration (TO-263AA). The primary trade-off is reduced continuous drain current (80A versus 110A) and lower power dissipation (325W versus 517W). This part is classified as Active and suitable for applications where the 80A current rating is sufficient. The RoHS3 compliance status provides regulatory alignment for new designs.

IPB038N12N3GATMA1 (Infineon Technologies)

The IPB038N12N3GATMA1 offers the highest continuous drain current rating (120A) among available substitutes, matching or exceeding the original part's current capability. This Infineon OptiMOS™ device features superior on-state resistance (3.8 mOhm at 100A) compared to the IXTA110N12T2 (14 mOhm at 55A), resulting in lower conduction losses. The package is PG-TO263-3, which is mechanically and electrically compatible with TO-263AA. Active product status and RoHS3 compliance support long-term availability. Higher gate charge (211 nC) and input capacitance (13800 pF) require evaluation in switching-speed-critical applications.

IPB144N12N3GATMA1 (Infineon Technologies)

The IPB144N12N3GATMA1 is suitable for applications with reduced current requirements (56A continuous drain current). This part exhibits the lowest gate charge (49 nC) and input capacitance (3220 pF) of the substitute group, enabling faster switching performance. On-state resistance (14.4 mOhm at 56A) is comparable to the original part. Active product status and RoHS3 compliance are confirmed. Power dissipation is significantly reduced (107W), making this option appropriate for lower-power circuit implementations.

Frequently Asked Questions (FAQ)

Q: Can the IXTA80N12T2 directly replace the IXTA110N12T2 in all applications?

A: The IXTA80N12T2 is mechanically and electrically compatible with identical voltage rating and package type. However, the reduced continuous drain current (80A versus 110A) and power dissipation (325W versus 517W) require verification that the application does not exceed these limits. The part is suitable only for designs operating within the 80A current envelope.

Q: What are the key differences between IXYS and Infineon substitute options?

A: The IXTA80N12T2 maintains the same TrenchT2™ technology and IXYS manufacturer lineage. The Infineon IPB038N12N3GATMA1 and IPB144N12N3GATMA1 employ OptiMOS™ technology with different performance characteristics. IPB038N12N3GATMA1 provides higher current capability (120A) with lower on-state resistance but higher gate charge. IPB144N12N3GATMA1 offers lower gate charge and faster switching but reduced current rating (56A).

Q: Are all substitute parts in the same package?

A: The IXTA110N12T2 uses TO-263AA packaging. The IXTA80N12T2 also uses TO-263AA. The Infineon parts (IPB038N12N3GATMA1 and IPB144N12N3GATMA1) use PG-TO263-3 packaging. Both package designations refer to the D2PAK (2 Leads + Tab) surface mount configuration and are mechanically and electrically interchangeable.

Q: What is the significance of product status (Active versus Obsolete)?

A: The IXTA110N12T2 is classified as Obsolete, indicating discontinued manufacturing and limited future availability. All substitute parts are classified as Active, confirming ongoing production and long-term procurement viability. Active status is essential for new designs and sustained production support.

Q: How do gate charge and input capacitance affect circuit design?

A: Gate charge (Qg) and input capacitance (Ciss) determine gate drive requirements and switching speed. The IXTA110N12T2 has 120 nC gate charge and 6570 pF capacitance. The IPB144N12N3GATMA1 has significantly lower values (49 nC and 3220 pF), enabling faster switching. The IPB038N12N3GATMA1 has higher values (211 nC and 13800 pF), requiring stronger gate drive circuits. Selection depends on switching frequency and gate driver capability.

Q: Are all substitute parts RoHS3 compliant?

A: The IXTA80N12T2, IPB038N12N3GATMA1, and IPB144N12N3GATMA1 are all confirmed RoHS3 compliant. The original IXTA110N12T2 does not list RoHS status. RoHS3 compliance is required for most commercial and industrial applications in regulated markets.

Q: What is the moisture sensitivity level (MSL) for these parts?

A: All parts listed (IXTA110N12T2, IXTA80N12T2, IPB038N12N3GATMA1, and IPB144N12N3GATMA1) have MSL 1 (Unlimited), indicating no moisture sensitivity restrictions during storage and handling.

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