IXTA110N055T2 N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The IXTA110N055T2 is an N-Channel 55V 110A surface mount MOSFET manufactured by IXYS in the TrenchT2™ series. This device is rated for 180W power dissipation and operates across the temperature range of -55°C to 175°C. The part is currently Active in product status and RoHS3 compliant.

Substitute parts are identified when equivalent electrical performance can be achieved within the specified voltage, current, and thermal operating parameters while maintaining compatible packaging and surface mount characteristics. The following substitute devices meet the core functional requirements of the IXTA110N055T2.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	55	V
Continuous Drain Current (Id) @ 25°C	110	A (Tc)
On-State Resistance (Rds On) @ 25A, 10V	6.6	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	4	V
Power Dissipation (Max)	180	W (Tc)
Operating Temperature Range	-55 to 175	°C (TJ)
Package Type	TO-263-3 (D2PAK)	Surface Mount
Gate Charge (Qg) @ 10V	57	nC
Input Capacitance (Ciss) @ 25V	3060	pF

Substitute Part Grouping Explanation

Substitution logic for the IXTA110N055T2 is based on the following critical parameters:

Primary Matching Criteria:

Drain to Source Voltage (Vdss): 55V minimum
Continuous Drain Current (Id): 100A or greater at 25°C
Package Type: TO-263-3 (D2PAK) surface mount configuration
Operating Temperature Range: -55°C to 175°C minimum
RoHS3 Compliance and MSL Level 1

Secondary Compatibility Factors:

On-State Resistance (Rds On): Comparable performance at rated current and gate voltage
Gate Threshold Voltage (Vgs(th)): Within ±20V gate voltage specification
Power Dissipation: Sufficient thermal capability for application requirements

Substitute parts are grouped into two categories:

Category A - Direct Voltage/Current Match (55V, 100A+): Parts maintaining the 55V Vdss rating with continuous drain current of 100A or greater. These devices provide the closest functional equivalence to the IXTA110N055T2.

Category B - Higher Voltage Rating (60V-75V, 75A+): Parts with elevated Vdss ratings (60V to 75V) and reduced continuous drain current (75A to 92A). These devices operate within the same thermal and package envelope but provide additional voltage margin. Selection from this category requires confirmation that the higher voltage rating does not conflict with circuit design specifications.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Vgs(th) (V)	Power Diss. (W)	Package	Temp Range (°C)
IXTA110N055T2	IXYS	55	110	6.6 @ 25A, 10V	4 @ 250µA	180	TO-263-3	-55 to 175
SQM110N05-06L_GE3	Vishay Siliconix	55	110	6 @ 30A, 10V	2.5 @ 250µA	157	TO-263	-55 to 175
BUK6607-55C,118	NXP USA Inc.	55	100	6.5 @ 25A, 10V	2.8 @ 1mA	158	D2PAK	-55 to 175
BUK9608-55B,118	Nexperia USA Inc.	55	75	7 @ 25A, 10V	2 @ 1mA	203	D2PAK	-55 to 175
STB85NF55T4	STMicroelectronics	55	80	8 @ 40A, 10V	4 @ 250µA	300	D2PAK	-55 to 175
STB140NF55T4	STMicroelectronics	55	80	8 @ 40A, 10V	4 @ 250µA	300	D2PAK	-55 to 175
PSMN7R6-60BS,118	Nexperia USA Inc.	60	92	7.8 @ 25A, 10V	4 @ 1mA	149	D2PAK	-55 to 175
BUK9606-75B,118	Nexperia USA Inc.	75	75	5.5 @ 25A, 10V	2 @ 1mA	300	D2PAK	-55 to 175
FDB060AN08A0	onsemi	75	80	6 @ 80A, 10V	4 @ 250µA	255	TO-263	-55 to 175
IRFS3307ZTRLPBF	Infineon Technologies	75	120	5.8 @ 75A, 10V	4 @ 150µA	230	D2PAK	-55 to 175
IRFS3307ZTRRPBF	Infineon Technologies	75	120	5.8 @ 75A, 10V	4 @ 150µA	230	TO-263	-55 to 175

Engineering Selection Recommendations

Category A Selection (55V Direct Equivalents):

The SQM110N05-06L_GE3 from Vishay Siliconix provides the closest functional match to the IXTA110N055T2. Both devices maintain 55V Vdss and 110A continuous drain current ratings. The Vishay device exhibits lower on-state resistance (6 mOhm vs. 6.6 mOhm) and lower gate threshold voltage (2.5V vs. 4V), resulting in improved switching efficiency. Both devices are RoHS3 compliant with MSL Level 1 and operate across the identical temperature range. This part is suitable for direct substitution in applications where the IXTA110N055T2 is specified.

The BUK6607-55C,118 from NXP USA Inc. maintains the 55V Vdss rating with 100A continuous drain current. This device is AEC-Q101 qualified for automotive applications and carries RoHS3 compliance. The slightly reduced current rating (100A vs. 110A) and comparable on-state resistance (6.5 mOhm) make this part suitable for applications with current requirements at or below 100A.

Category B Selection (Higher Voltage Ratings):

The BUK9608-55B,118 from Nexperia USA Inc. maintains the 55V Vdss rating with 75A continuous drain current. This device is AEC-Q101 qualified and provides enhanced power dissipation capability (203W). Selection of this part is appropriate when the application current requirement does not exceed 75A and automotive-grade qualification is required.

The PSMN7R6-60BS,118 from Nexperia USA Inc. operates at 60V Vdss with 92A continuous drain current. This device provides a voltage margin above the IXTA110N055T2 specification and is suitable for applications where circuit voltage may approach the 55V limit.

The BUK9606-75B,118 and IRFS3307ZTRLPBF/IRFS3307ZTRRPBF devices operate at 75V Vdss with reduced continuous drain current (75A to 120A). These parts are appropriate for applications requiring higher voltage headroom. The IRFS3307 series from Infineon provides 120A continuous drain current at 75V, offering performance comparable to the IXTA110N055T2 at an elevated voltage rating.

The FDB060AN08A0 from onsemi operates at 75V Vdss with 80A continuous drain current in the PowerTrench® series. This device is RoHS3 compliant with MSL Level 1 and provides adequate thermal performance for applications within its current rating.

The STB85NF55T4 and STB140NF55T4 from STMicroelectronics maintain the 55V Vdss rating with 80A continuous drain current. Both devices are RoHS3 compliant and provide enhanced power dissipation (300W), making them suitable for high-power applications where thermal management is critical.

Compliance and Certification:

All listed substitute parts maintain RoHS3 compliance and MSL Level 1 moisture sensitivity rating. Parts designated as AEC-Q101 qualified (BUK6607-55C,118, BUK9608-55B,118, BUK9606-75B,118) are suitable for automotive applications. All parts operate within the -55°C to 175°C temperature range specified for the IXTA110N055T2.

Frequently Asked Questions (FAQ)

Q: Can the SQM110N05-06L_GE3 be used as a direct replacement for the IXTA110N055T2?

A: Yes. Both devices maintain identical 55V Vdss and 110A continuous drain current ratings. The SQM110N05-06L_GE3 exhibits lower on-state resistance and lower gate threshold voltage, resulting in improved performance characteristics. Both devices are RoHS3 compliant with MSL Level 1 and operate across the identical temperature range. The TO-263 package designation is equivalent to the D2PAK configuration.

Q: What is the difference between the 55V and 75V rated substitute parts?

A: The 55V rated parts (SQM110N05-06L_GE3, BUK6607-55C,118, BUK9608-55B,118, STB85NF55T4, STB140NF55T4) maintain the same voltage specification as the IXTA110N055T2. The 75V rated parts (BUK9606-75B,118, FDB060AN08A0, IRFS3307ZTRLPBF, IRFS3307ZTRRPBF) provide additional voltage margin and are suitable for applications where circuit voltage may approach the 55V limit or where higher voltage headroom is required. Selection of a higher voltage device does not conflict with circuits designed for 55V operation.

Q: Are all substitute parts available in the same package configuration?

A: All substitute parts are available in TO-263-3 or D2PAK surface mount packages, which are mechanically and electrically equivalent. The TO-263 and D2PAK designations refer to the same physical package configuration with 2 leads plus tab. All parts are suitable for surface mount assembly on PCBs designed for the IXTA110N055T2.

Q: Which substitute part should be selected if the application requires automotive qualification?

A: The BUK6607-55C,118, BUK9608-55B,118, and BUK9606-75B,118 from Nexperia USA Inc. are AEC-Q101 qualified for automotive applications. These parts maintain RoHS3 compliance and MSL Level 1 rating. Selection among these three parts depends on the specific voltage and current requirements of the automotive application.

Q: What is the significance of the on-state resistance (Rds On) parameter when selecting a substitute?

A: On-state resistance directly affects power dissipation and switching efficiency. Lower Rds On values result in reduced power loss during conduction. The IXTA110N055T2 specifies 6.6 mOhm at 25A and 10V gate voltage. Substitute parts with comparable or lower Rds On values (such as the SQM110N05-06L_GE3 at 6 mOhm) provide equivalent or improved performance. Parts with higher Rds On values (such as STB85NF55T4 at 8 mOhm) are acceptable if thermal management capability is sufficient for the application.

Q: Can a 75A rated device substitute for a 110A rated device?

A: A 75A rated device can substitute for the IXTA110N055T2 only if the application continuous drain current requirement does not exceed 75A. The BUK9608-55B,118 and BUK9606-75B,118 are rated for 75A continuous drain current. If the application requires 110A continuous current, these devices are not suitable. The SQM110N05-06L_GE3 and IRFS3307 series maintain 110A or higher current ratings and are appropriate for high-current applications.

Q: What is the difference between Cut Tape (CT) and Tape & Reel (TR) packaging?

A: Cut Tape and Tape & Reel are distribution formats for surface mount components. Cut Tape (CT) packaging provides individual components or small quantities on carrier tape. Tape & Reel (TR) packaging provides components on continuous reel format suitable for automated assembly equipment. Both formats contain identical components in the same physical package. Selection between CT and TR depends on manufacturing volume and assembly equipment capability, not on electrical performance.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All listed substitute parts are RoHS3 compliant and carry MSL Level 1 (Unlimited) moisture sensitivity rating. This ensures compatibility with modern manufacturing processes and environmental regulations. All parts are REACH unaffected and classified under ECCN EAR99 for export purposes.

Q: What is the gate charge (Qg) parameter and why does it vary among substitute parts?

A: Gate charge represents the total charge required to switch the MOSFET from off to on state at a specified gate voltage. The IXTA110N055T2 specifies 57 nC at 10V gate voltage. Substitute parts exhibit gate charge values ranging from 38.7 nC to 150 nC depending on device design and current rating. Lower gate charge values result in faster switching speed and reduced gate drive power requirements. Higher gate charge values may require increased gate drive capability but do not prevent substitution if the gate drive circuit is designed accordingly.

Q: Can the IRFS3307 series be used in applications designed for the IXTA110N055T2?

A: The IRFS3307ZTRLPBF and IRFS3307ZTRRPBF can be used in applications designed for the IXTA110N055T2 if the circuit voltage specification permits operation at 75V Vdss. Both devices provide 120A continuous drain current, exceeding the IXTA110N055T2 rating. The lower on-state resistance (5.8 mOhm at 75A, 10V) provides improved efficiency. Both devices are RoHS3 compliant with MSL Level 1 and operate across the identical temperature range. The primary consideration is confirmation that the 75V rating does not conflict with circuit design specifications.

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