IXST45N120B IGBT Equivalent & Substitute Parts

Part Overview

The IXST45N120B is a 1200V, 75A IGBT (Insulated Gate Bipolar Transistor) rated for 300W maximum power dissipation in a Surface Mount TO-268AA package. This component is classified as obsolete, necessitating identification of active equivalent parts for new designs and ongoing production requirements. The PT-type IGBT architecture and electrical specifications define the substitution criteria for compatible alternatives.

Substiute Parts

IXST45N120B
IXYSIn Stock: 807IXST45N120B Datasheet
IXST45N120B
Current Part
IXA45IF1200HB
IXYSIn Stock: 1186IXA45IF1200HB Datasheet
IXA45IF1200HB
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Key Parameters

Parameter Value Unit
Voltage - Collector Emitter Breakdown (Max) 1200 V
Current - Collector (Ic) (Max) 75 A
Current - Collector Pulsed (Icm) 180 A
Power - Max 300 W
Vce(on) (Max) 3 V @ 15V, 45A
Gate Charge 120 nC
Switching Delay Time (Td on/off) 36/360 ns @ 25°C
Operating Temperature Range -55 to 150 °C (TJ)
IGBT Type PT
Input Type Standard
Mounting Type Surface Mount
Package / Case TO-268-3 (D³Pak)

Substitute Part Grouping Explanation

Substitution of the IXST45N120B is determined by the following critical parameters:

Voltage Class: 1200V collector-emitter breakdown voltage is the primary electrical constraint. Substitute parts must maintain this voltage rating.

Current Rating: Collector current (Ic) must equal or exceed 75A continuous rating. The IXA45IF1200HB provides 78A, satisfying this requirement with margin.

IGBT Type: PT-type architecture must be preserved to maintain switching characteristics and gate drive compatibility.

Input Type: Standard input configuration ensures gate drive circuit compatibility.

Thermal Rating: Maximum power dissipation and operating temperature range (-55°C to 150°C) define thermal design constraints.

Package Compatibility: While the main part uses Surface Mount TO-268AA and the substitute uses Through Hole TO-247AD, both are three-terminal configurations with identical electrical pin functions (Collector, Gate, Emitter). Package selection depends on circuit board layout requirements.

Parameter Comparison

Parameter IXST45N120B (Main) IXA45IF1200HB (Substitute) Unit
Manufacturer IXYS IXYS
Category Transistors, IGBTs Transistors, IGBTs
IGBT Type PT PT
Voltage - Collector Emitter Breakdown (Max) 1200 1200 V
Current - Collector (Ic) (Max) 75 78 A
Power - Max 300 325 W
Vce(on) (Max) 3.0 @ 15V, 45A 2.1 @ 15V, 35A V
Gate Charge 120 106 nC
Input Type Standard Standard
Operating Temperature Range -55 to 150 -40 to 150 °C (TJ)
Mounting Type Surface Mount Through Hole
Package / Case TO-268-3 (D³Pak) TO-247-3
Product Status Obsolete Active

Engineering Selection Recommendations

Product Status Consideration: The IXST45N120B is classified as obsolete. The IXA45IF1200HB is an active product from the same manufacturer (IXYS), ensuring continued availability and manufacturing support.

Compliance & Certifications: Both parts carry identical REACH and ECCN classifications (REACH Unaffected, EAR99), confirming regulatory equivalence. The IXA45IF1200HB additionally carries RoHS3 compliance certification, meeting current environmental standards.

Electrical Compatibility: The substitute part exceeds the main part specifications in collector current (78A vs. 75A) and maximum power rating (325W vs. 300W), providing design margin. The lower Vce(on) value (2.1V vs. 3.0V) indicates improved conduction efficiency.

Thermal Consideration: The substitute part operates across a narrower temperature range (-40°C to 150°C vs. -55°C to 150°C). Applications requiring operation below -40°C junction temperature require evaluation of the main part's extended low-temperature capability.

Package Selection: Circuit board layout determines package choice. Surface Mount TO-268AA suits high-density PCB designs; Through Hole TO-247AD suits applications requiring mechanical robustness or legacy board designs. Both packages provide identical electrical functionality.

Frequently Asked Questions (FAQ)

Q: Can the IXA45IF1200HB directly replace the IXST45N120B in existing designs?

A: Electrical substitution is valid. The IXA45IF1200HB meets or exceeds all critical electrical parameters (voltage, current, power rating, gate charge). Package change from Surface Mount TO-268AA to Through Hole TO-247AD requires PCB layout modification. Gate drive circuits require no changes due to identical Standard input type and comparable gate charge specifications.

Q: What is the significance of the different Vce(on) values?

A: Vce(on) represents on-state voltage drop. The IXA45IF1200HB exhibits lower Vce(on) (2.1V at 35A vs. 3.0V at 45A), indicating lower conduction losses and improved thermal efficiency. This is a beneficial characteristic for substitution.

Q: Are the switching characteristics compatible?

A: The main part specifies Td(on/off) of 36ns/360ns at 960V, 45A. The substitute part does not provide identical test conditions, preventing direct comparison. However, both parts are PT-type IGBTs with Standard input configuration, ensuring compatible gate drive requirements. Application-specific switching frequency analysis is necessary for designs sensitive to switching losses.

Q: Does the operating temperature range difference affect substitution?

A: The substitute part operates from -40°C to 150°C junction temperature, compared to -55°C to 150°C for the main part. Applications requiring junction temperatures below -40°C cannot use the IXA45IF1200HB. Standard industrial applications operating within -40°C to 150°C range experience no limitation.

Q: What are the moisture sensitivity implications?

A: Both parts carry MSL (Moisture Sensitivity Level) rating of 1 (Unlimited), indicating no moisture sensitivity restrictions. Storage and handling procedures are identical for both components.

Q: How do the different test conditions affect parameter interpretation?

A: The main part specifies Vce(on) at 960V, 45A, 5Ohm load. The substitute specifies Vce(on) at 600V, 35A, 27Ohm load. These different test conditions reflect different application profiles but do not prevent substitution. The lower voltage and current test condition for the substitute indicates optimization for lower-power applications, while the main part was characterized for higher-voltage switching scenarios.

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