IXSH50N60B IGBT Equivalent & Substitute Parts

Part Overview

The IXSH50N60B is a 600V, 75A IGBT in TO-247-3 package manufactured by IXYS. This device is rated for 250W maximum power dissipation and features a PT (Punch-Through) IGBT type with standard input configuration. The part is currently obsolete, making identification of suitable substitute components necessary for ongoing system support, design updates, and procurement continuity.

Key Parameters

Parameter	Value	Unit
Voltage - Collector Emitter Breakdown (Max)	600	V
Current - Collector (Ic) (Max)	75	A
Current - Collector Pulsed (Icm)	200	A
Power - Max	250	W
Vce(on) (Max) @ Vge, Ic	2.5V @ 15V, 50A	V
Gate Charge	167	nC
Switching Energy (off)	3.3	mJ
Td (on/off) @ 25°C	70ns/150ns	ns
Operating Temperature Range	-55 to 150	°C (TJ)
Package / Case	TO-247-3	-
Mounting Type	Through Hole	-

Substitute Part Grouping Explanation

Substitution of the IXSH50N60B is determined by the following critical parameters:

Voltage Rating: All substitute parts must maintain the 600V collector-emitter breakdown voltage to ensure safe operation within the original circuit design envelope.

Current Rating: The maximum collector current (Ic) must equal or exceed 75A. Substitute parts with higher current ratings (80A, 120A) provide additional design margin and are acceptable.

Package Type: All substitutes must use the TO-247-3 through-hole package to ensure mechanical and thermal compatibility with existing PCB layouts and heatsink mounting.

Input Type: All substitutes must feature standard input configuration to maintain gate drive circuit compatibility.

Operating Temperature Range: Substitute parts must support the -55°C to 150°C operating range or exceed it.

Pulsed Current (Icm): The pulsed current rating must meet or exceed 200A to handle transient conditions.

Substitutes are grouped into two categories: direct manufacturer upgrades from IXYS and functionally equivalent alternatives from other manufacturers (onsemi) that meet all electrical and mechanical requirements.

Parameter Comparison

Parameter	IXSH50N60B	IXXH50N60B3	FGH40N60SMD-F085	HGTG30N60A4D	HGTG40N60A4	NGTB40N60L2WG
Manufacturer	IXYS	IXYS	onsemi	onsemi	onsemi	onsemi
Voltage - Collector Emitter Breakdown (Max)	600V	600V	600V	600V	600V	600V
Current - Collector (Ic) (Max)	75A	120A	80A	75A	75A	80A
Current - Collector Pulsed (Icm)	200A	200A	120A	240A	300A	160A
Power - Max	250W	600W	349W	463W	625W	417W
Vce(on) (Max) @ Vge, Ic	2.5V @ 15V, 50A	1.8V @ 15V, 36A	2.5V @ 15V, 40A	2.6V @ 15V, 30A	2.7V @ 15V, 40A	2.61V @ 15V, 40A
Gate Charge	167nC	70nC	180nC	225nC	350nC	228nC
Operating Temperature Range	-55 to 150°C	Not specified	-55 to 175°C	-55 to 150°C	-55 to 150°C	-55 to 175°C
Package / Case	TO-247-3	TO-247-3	TO-247-3	TO-247-3	TO-247-3	TO-247-3
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole
Input Type	Standard	Standard	Standard	Standard	Standard	Standard
Product Status	Obsolete	Active	Active	Active	Obsolete	Obsolete
RoHS Status	Not specified	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

Primary Recommendation: IXXH50N60B3

The IXXH50N60B3 is the preferred substitute for the IXSH50N60B. Both devices are manufactured by IXYS, ensuring design continuity and compatibility with existing gate drive circuits. The IXXH50N60B3 is currently active in production, providing long-term availability. This device exceeds the original specifications with 120A collector current (versus 75A), 600W power rating (versus 250W), and improved switching characteristics (27ns/100ns turn-on/turn-off versus 70ns/150ns). The lower gate charge (70nC versus 167nC) reduces gate drive power requirements. ROHS3 compliance ensures environmental regulatory alignment.

Secondary Recommendation: FGH40N60SMD-F085

The FGH40N60SMD-F085 from onsemi is an active, automotive-qualified alternative meeting AEC-Q101 standards. This Field Stop IGBT provides 80A collector current and 349W power rating. The device maintains the 600V voltage rating and TO-247-3 package compatibility. Extended operating temperature range (-55°C to 175°C) exceeds the original specification. ROHS3 compliance and automotive qualification support applications requiring higher reliability standards.

Tertiary Recommendation: HGTG30N60A4D

The HGTG30N60A4D from onsemi is an active device matching the original 75A collector current specification. This part provides 463W power rating and enhanced pulsed current capability (240A). The TO-247-3 package ensures mechanical compatibility. ROHS3 compliance and active production status support long-term availability. Operating temperature range matches the original specification (-55°C to 150°C).

Avoid: HGTG40N60A4 and NGTB40N60L2WG

Both HGTG40N60A4 and NGTB40N60L2WG are obsolete products. While electrically compatible, their obsolete status creates procurement risk and limits future availability. These parts should be selected only when active alternatives are unavailable.

Frequently Asked Questions (FAQ)

Q: Can the IXXH50N60B3 directly replace the IXSH50N60B without circuit modifications?

A: Yes. The IXXH50N60B3 maintains the same 600V voltage rating, TO-247-3 package, standard input configuration, and operating temperature range. The higher current rating (120A versus 75A) and improved switching characteristics provide enhanced performance without requiring gate drive circuit changes. Thermal management may improve due to lower on-state voltage.

Q: What is the difference between PT and Field Stop IGBT types in these substitutes?

A: The IXSH50N60B uses PT (Punch-Through) technology. The FGH40N60SMD-F085 uses Field Stop technology, which offers different switching and conduction characteristics. Both are functionally compatible in TO-247-3 packages with 600V ratings. Field Stop devices typically exhibit different gate charge and switching energy profiles, which may affect gate drive circuit performance but do not prevent substitution.

Q: Are all substitute parts RoHS compliant?

A: The IXXH50N60B3, FGH40N60SMD-F085, HGTG30N60A4D, HGTG40N60A4, and NGTB40N60L2WG are all ROHS3 compliant. The original IXSH50N60B RoHS status is not specified in the provided data.

Q: Does the FGH40N60SMD-F085 automotive qualification affect its use in non-automotive applications?

A: No. AEC-Q101 qualification indicates enhanced reliability testing and quality standards. Automotive-qualified components are suitable for all applications, including non-automotive systems. The qualification provides additional assurance of device reliability.

Q: What is the impact of different gate charge values on circuit design?

A: Gate charge affects the energy required to switch the IGBT on and off. The IXXH50N60B3 has significantly lower gate charge (70nC versus 167nC in the original), reducing gate drive power dissipation and potentially allowing use of lower-power gate drive circuits. Higher gate charge values (HGTG40N60A4 at 350nC) require more gate drive energy but do not prevent substitution in existing circuits designed for the original 167nC specification.

Q: Can I use a substitute with higher pulsed current rating?

A: Yes. Higher pulsed current ratings (Icm) provide additional margin for transient conditions. The HGTG40N60A4 (300A pulsed) and HGTG30N60A4D (240A pulsed) exceed the original 200A specification, offering enhanced transient handling capability without negative effects on circuit operation.

Q: Are there package considerations when substituting these parts?

A: All recommended substitutes use the TO-247-3 through-hole package, ensuring direct mechanical and thermal compatibility with existing PCB layouts and heatsink mounting. No package modifications are required.

Q: Why should I avoid obsolete substitutes if they are electrically compatible?

A: Obsolete parts face procurement challenges, including limited inventory, potential price volatility, and eventual unavailability. Active products (IXXH50N60B3, FGH40N60SMD-F085, HGTG30N60A4D) provide long-term supply security and stable pricing, supporting production continuity and cost management.

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