IXSH45N100 IGBT Equivalent & Substitute Parts

Part Overview

The IXSH45N100 is a 1000V, 75A IGBT manufactured by IXYS in a TO-247-3 through-hole package. This device is rated for 300W maximum power dissipation and features standard input configuration with a gate charge of 165 nC. The part is currently classified as obsolete, making identification of suitable substitute components necessary for ongoing system support and new design implementations.

Key Parameters

Parameter	Value	Unit
Voltage - Collector Emitter Breakdown (Max)	1000	V
Current - Collector (Ic) (Max)	75	A
Current - Collector Pulsed (Icm)	180	A
Vce(on) (Max)	2.7	V @ 15V, 45A
Power - Max	300	W
Switching Energy (off)	15	mJ
Gate Charge	165	nC
Td (on/off) @ 25°C	80/400	ns
Operating Temperature Range	-55 to 150	°C (TJ)
Mounting Type	Through Hole	-
Package / Case	TO-247-3	-
Input Type	Standard	-

Substitute Part Grouping Explanation

Substitution of the IXSH45N100 is determined by the following critical parameters:

Voltage Rating: The substitute must maintain or exceed the 1000V collector-emitter breakdown voltage to ensure safe operation in the original application circuit.

Current Rating: The substitute must support the 75A continuous collector current (Ic) requirement. Higher current ratings provide design margin.

Package Compatibility: The substitute must use the TO-247-3 through-hole package to ensure mechanical and electrical compatibility with existing PCB layouts and thermal management solutions.

Input Type: Standard input configuration must be maintained for gate drive circuit compatibility.

Operating Temperature Range: The substitute must support the full operating temperature range of -55°C to 150°C junction temperature.

The IXA55I1200HJ meets these substitution criteria with a higher voltage rating (1200V), higher current capability (84A), compatible TO-247-3 package, standard input type, and overlapping operating temperature range (-40°C to 150°C).

Parameter Comparison

Parameter	IXSH45N100	IXA55I1200HJ	Unit
Manufacturer	IXYS	IXYS	-
Category	Transistors, IGBTs	Transistors, IGBTs	-
Voltage - Collector Emitter Breakdown (Max)	1000	1200	V
Current - Collector (Ic) (Max)	75	84	A
Vce(on) (Max)	2.7 @ 15V, 45A	2.1 @ 15V, 50A	V
Power - Max	300	290	W
Gate Charge	165	190	nC
Input Type	Standard	Standard	-
Operating Temperature Range	-55 to 150	-40 to 150	°C (TJ)
Mounting Type	Through Hole	Through Hole	-
Package / Case	TO-247-3	TO-247-3	-
Product Status	Obsolete	Active	-

Engineering Selection Recommendations

The IXA55I1200HJ is the designated substitute for the obsolete IXSH45N100. This substitution is supported by the following factors:

Product Status: The IXSH45N100 is obsolete, while the IXA55I1200HJ is active and available in production quantities (1400 pcs in stock). This ensures long-term supply chain continuity.

Compliance: Both devices are REACH Unaffected and classified under ECCN EAR99. The IXA55I1200HJ carries RoHS3 compliance, providing enhanced environmental and regulatory alignment for new designs.

Electrical Compatibility: The IXA55I1200HJ provides superior electrical performance with 1200V voltage rating (200V margin above the original 1000V requirement), 84A current capability (9A above the 75A requirement), and improved on-state voltage (2.1V versus 2.7V), resulting in lower conduction losses.

Mechanical Compatibility: Both devices use the TO-247-3 package and through-hole mounting, ensuring direct PCB layout compatibility without redesign.

Thermal Management: The IXA55I1200HJ maintains the same maximum junction temperature rating (150°C) as the original part, supporting equivalent thermal design approaches.

Frequently Asked Questions (FAQ)

Q: Can the IXA55I1200HJ directly replace the IXSH45N100 in existing designs?

A: Yes. Both devices use the TO-247-3 package with identical pin configuration and through-hole mounting. Gate drive circuits designed for standard input IGBTs are compatible. The higher voltage and current ratings of the substitute provide design margin without requiring circuit modifications.

Q: What is the difference in gate charge between these devices?

A: The IXSH45N100 has a gate charge of 165 nC, while the IXA55I1200HJ has 190 nC. This 25 nC difference affects gate drive timing and power dissipation in the gate drive circuit. Gate drive circuits must be capable of supplying the higher charge requirement.

Q: Why does the IXA55I1200HJ have a lower minimum operating temperature?

A: The IXSH45N100 operates from -55°C to 150°C, while the IXA55I1200HJ operates from -40°C to 150°C. Applications requiring operation below -40°C junction temperature must retain the original IXSH45N100 or identify alternative substitutes with extended low-temperature ratings.

Q: How do the switching characteristics compare?

A: The IXSH45N100 has turn-on and turn-off delays of 80ns and 400ns respectively at 25°C. The IXA55I1200HJ switching delay specifications are not provided in the available data. Gate drive circuit timing must be evaluated based on actual device characterization or manufacturer datasheets.

Q: Is the power dissipation rating equivalent?

A: The IXSH45N100 is rated for 300W maximum power dissipation, while the IXA55I1200HJ is rated for 290W. Both devices support equivalent thermal management approaches. The lower on-state voltage of the IXA55I1200HJ (2.1V versus 2.7V) typically results in reduced conduction losses in practical applications.

Q: What packaging format is the IXA55I1200HJ supplied in?

A: The IXA55I1200HJ is supplied in tube packaging, while the original IXSH45N100 packaging format is not specified. Tube packaging is standard for through-hole components and does not affect device functionality or PCB assembly compatibility.

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