IXSH40N60B IGBT Equivalent & Substitute Parts

Part Overview

The IXSH40N60B is an IGBT (Insulated Gate Bipolar Transistor) rated for 600V collector-emitter breakdown voltage with a maximum collector current of 75A and 280W power dissipation. This device is packaged in a TO-247-3 through-hole configuration and is currently classified as obsolete. Due to its obsolete status, equivalent and substitute parts are necessary for ongoing design support, production continuity, and system maintenance applications.

Key Parameters

Parameter	Value	Unit
Voltage - Collector Emitter Breakdown (Max)	600	V
Current - Collector (Ic) (Max)	75	A
Current - Collector Pulsed (Icm)	150	A
Power - Max	280	W
Vce(on) (Max) @ Vge, Ic	2.2V @ 15V, 40A	V
Gate Charge	190	nC
Switching Energy (off)	1.8	mJ
Td (on/off) @ 25°C	50ns/110ns	ns
Operating Temperature	-55 to 150	°C (TJ)
Package / Case	TO-247-3	-
Mounting Type	Through Hole	-
IGBT Type	PT	-

Substitute Part Grouping Explanation

Substitution of the IXSH40N60B is determined by the following critical parameters:

Voltage Rating: All substitute parts must maintain the 600V collector-emitter breakdown voltage specification to ensure safe operation within the original circuit design envelope.

Current Capability: Substitute parts must support a minimum collector current (Ic) rating equal to or greater than 75A. Parts with higher current ratings (80A, 120A) are acceptable as they provide design margin and thermal headroom.

Package Compatibility: All substitutes must use the TO-247-3 through-hole package to ensure mechanical and electrical compatibility with existing PCB layouts and thermal management solutions.

Input Type: All substitutes must feature standard input type gate drive compatibility.

Thermal Operating Range: Substitute parts must support the operating temperature range of -55°C to 150°C minimum, or an extended range that encompasses this specification.

The three substitute parts identified meet these core substitution criteria while offering varying levels of performance enhancement and product status improvements.

Parameter Comparison

Parameter	IXSH40N60B (Main)	IXXH50N60B3	FGH40N60SMD-F085	NGTB40N60L2WG
Manufacturer	IXYS	IXYS	onsemi	onsemi
Voltage - Collector Emitter Breakdown (Max)	600V	600V	600V	600V
Current - Collector (Ic) (Max)	75A	120A	80A	80A
Current - Collector Pulsed (Icm)	150A	200A	120A	160A
Power - Max	280W	600W	349W	417W
Vce(on) (Max) @ Vge, Ic	2.2V @ 15V, 40A	1.8V @ 15V, 36A	2.5V @ 15V, 40A	2.61V @ 15V, 40A
Gate Charge	190nC	70nC	180nC	228nC
Switching Energy (off)	1.8mJ	740µJ	300µJ	280µJ
Td (on/off) @ 25°C	50ns/110ns	27ns/100ns	18ns/110ns	98ns/213ns
Operating Temperature	-55 to 150°C	Not specified	-55 to 175°C	-55 to 175°C
Package / Case	TO-247-3	TO-247-3	TO-247-3	TO-247-3
IGBT Type	PT	PT	Field Stop	Trench Field Stop
Product Status	Obsolete	Active	Active	Obsolete
RoHS Status	Not specified	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

IXXH50N60B3 (IXYS): This part is the preferred substitute for new designs and production continuity. It maintains IXYS manufacturer lineage with the main part, offers active product status, and provides significant performance improvements including lower gate charge (70nC vs. 190nC), reduced switching energy, and higher current capability (120A vs. 75A). ROHS3 compliance and GenX3™/XPT™ series designation indicate modern manufacturing standards. The lower Vce(on) value (1.8V) reduces conduction losses. This part is suitable for direct replacement in applications where the higher current rating and improved thermal characteristics provide design margin.

FGH40N60SMD-F085 (onsemi): This part is suitable for applications requiring automotive-grade qualification and extended thermal operating range (-55°C to 175°C). The Field Stop IGBT type offers faster switching characteristics (18ns turn-on) and lower off-state switching energy (300µJ). AEC-Q101 qualification and automotive-grade designation make this part appropriate for automotive and industrial applications with stringent reliability requirements. Current rating of 80A exceeds the main part specification. ROHS3 compliance is confirmed.

NGTB40N60L2WG (onsemi): This part matches the main part's current rating (80A) and voltage specification but carries obsolete product status. While it provides higher power dissipation capability (417W) and extended thermal range (-55°C to 175°C), its obsolete status limits its suitability for new production. This part is applicable only for legacy system maintenance where exact performance matching is required and future availability is not a concern. ROHS3 compliance is confirmed.

Frequently Asked Questions (FAQ)

Q: Can the IXXH50N60B3 be used as a direct replacement for the IXSH40N60B?

A: Yes. Both parts share identical voltage ratings (600V), TO-247-3 packaging, through-hole mounting, and standard input type gate drive. The IXXH50N60B3 exceeds the minimum current requirement (120A vs. 75A) and provides superior performance characteristics. The higher current rating provides additional design margin without requiring circuit modifications.

Q: What is the primary difference between the IXSH40N60B and the FGH40N60SMD-F085?

A: The primary differences are IGBT technology type and thermal operating range. The IXSH40N60B uses PT (Punch-Through) technology, while the FGH40N60SMD-F085 uses Field Stop technology. The FGH40N60SMD-F085 offers faster switching times (18ns turn-on vs. 50ns) and extended temperature range (-55°C to 175°C vs. -55°C to 150°C). The FGH40N60SMD-F085 includes AEC-Q101 automotive qualification.

Q: Why is the NGTB40N60L2WG listed as a substitute if it is obsolete?

A: The NGTB40N60L2WG is included for reference in legacy system maintenance scenarios where exact performance matching is required and component availability from existing inventory is available. Its obsolete status makes it unsuitable for new production designs. For new applications, the IXXH50N60B3 or FGH40N60SMD-F085 are preferred.

Q: Are all substitute parts compatible with the original PCB layout?

A: Yes. All substitute parts use the TO-247-3 through-hole package, which provides identical mechanical and electrical footprint compatibility with the IXSH40N60B. No PCB modifications are required for package compatibility.

Q: What is the significance of the lower gate charge in the IXXH50N60B3?

A: The IXXH50N60B3 gate charge of 70nC compared to the main part's 190nC indicates faster gate drive response and reduced gate drive power requirements. This results in faster switching transitions and lower overall system power consumption, particularly in high-frequency switching applications.

Q: Which substitute part is recommended for automotive applications?

A: The FGH40N60SMD-F085 is specifically qualified for automotive applications with AEC-Q101 certification and automotive-grade designation. This part is appropriate for automotive power conversion, motor control, and industrial applications requiring automotive-level reliability standards.

Q: Can the higher current rating of substitute parts cause issues in the original circuit?

A: No. Higher current ratings indicate greater device capability and do not cause circuit issues. The device will operate within its safe operating area (SOA) at the same current levels as the original part. The higher rating provides thermal margin and design flexibility for future upgrades.

Q: What is the difference between PT, Field Stop, and Trench Field Stop IGBT types?

A: These represent different semiconductor manufacturing technologies. PT (Punch-Through) is the original IGBT technology used in the IXSH40N60B. Field Stop and Trench Field Stop are advanced technologies that offer improved switching characteristics and lower losses. All three types are functionally compatible in standard IGBT applications when voltage and current ratings are matched.

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