IXSH40N60A IGBT Equivalent & Substitute Parts

Part Overview

The IXSH40N60A is an IGBT (Insulated Gate Bipolar Transistor) rated for 600V collector-emitter breakdown voltage with a maximum collector current of 75A and 300W power dissipation. This component is packaged in a Through Hole TO-247-3 configuration and is currently classified as obsolete. Due to its obsolete status, equivalent and substitute parts are necessary for ongoing design support, production continuity, and system maintenance applications.

Substiute Parts

IXSH40N60A

IXYSIn Stock: 931IXSH40N60A Datasheet

Current PartRFQ

IXXH50N60B3

IXYSIn Stock: 858IXXH50N60B3 Datasheet

DirectRFQ

FGH40N60SMD-F085

onsemiIn Stock: 800FGH40N60SMD-F085 Datasheet

SimilarRFQ

NGTB40N60L2WG

onsemiIn Stock: 812NGTB40N60L2WG Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution of the IXSH40N60A is determined by the following critical parameters:

Voltage Rating: All substitute parts must maintain a minimum collector-emitter breakdown voltage of 600V to ensure safe operation within the original design envelope.

Current Rating: Substitute parts must support a minimum collector current (Ic) of 75A. Parts with higher current ratings (120A, 80A) are acceptable as they provide equivalent or superior current handling capability.

Power Dissipation: The original part is rated for 300W maximum power. Substitute parts with equal or higher power ratings (600W, 349W, 417W) are compatible.

Package and Mounting: All substitute parts must use the Through Hole TO-247-3 package configuration to ensure mechanical and thermal compatibility with existing PCB layouts and heatsink assemblies.

Input Type: All parts maintain Standard input type configuration, ensuring gate drive circuit compatibility.

Operating Temperature Range: Substitute parts must support the operating temperature range of -55°C to 150°C minimum. Parts with extended ranges (-55°C to 175°C) provide additional thermal margin.

Parameter Comparison

Engineering Selection Recommendations

IXXH50N60B3 (IXYS GenX3™/XPT™ Series)

This part is the primary substitute for the IXSH40N60A. It exceeds the original specifications in current rating (120A vs. 75A) and power dissipation (600W vs. 300W). The IXXH50N60B3 features significantly improved switching characteristics with lower gate charge (70nC vs. 190nC) and faster switching times (27ns/100ns vs. 55ns/400ns), resulting in reduced switching losses. The part is currently in active production status with ROHS3 compliance, ensuring long-term availability and regulatory alignment. The lower on-state voltage (1.8V vs. 3V) provides improved thermal performance in high-current applications.

FGH40N60SMD-F085 (onsemi Field Stop Technology)

This part provides a direct current-rated alternative (80A vs. 75A) with comparable power handling (349W vs. 300W). The FGH40N60SMD-F085 is qualified to AEC-Q101 automotive standards and features extended operating temperature range (-55°C to 175°C vs. -55°C to 150°C). This part is suitable for applications requiring automotive-grade reliability and thermal margin. The Field Stop technology delivers faster switching times (18ns/110ns) compared to the original part, reducing switching energy losses. Active production status and ROHS3 compliance ensure supply chain continuity.

NGTB40N60L2WG (onsemi Trench Field Stop Technology)

This part matches the original current rating (80A vs. 75A) and provides higher power dissipation capability (417W vs. 300W). The Trench Field Stop architecture offers extended operating temperature range (-55°C to 175°C). However, this part is classified as obsolete, limiting its suitability for new designs or long-term production requirements. The higher gate charge (228nC vs. 190nC) and slower switching times (98ns/213ns) result in increased switching losses compared to the original part and other active alternatives.

Frequently Asked Questions (FAQ)

Q: Can the IXXH50N60B3 directly replace the IXSH40N60A in existing designs?

A: Yes. The IXXH50N60B3 maintains the same 600V voltage rating, TO-247-3 package, and Through Hole mounting configuration. The higher current rating (120A vs. 75A) and power dissipation (600W vs. 300W) provide design margin. The improved switching characteristics (lower gate charge and faster switching times) reduce switching losses, which may require thermal design review in applications operating at maximum power levels.

Q: What is the primary advantage of the FGH40N60SMD-F085 over the IXSH40N60A?

A: The FGH40N60SMD-F085 offers AEC-Q101 automotive qualification, extended operating temperature range (-55°C to 175°C vs. -55°C to 150°C), and active production status. The Field Stop technology provides faster switching times (18ns/110ns), reducing switching energy losses. These characteristics make it suitable for automotive and industrial applications requiring higher reliability standards.

Q: Why is the NGTB40N60L2WG listed as a substitute if it is obsolete?

A: The NGTB40N60L2WG is included for reference in applications where existing inventory exists or where legacy system support is required. However, for new designs or production continuity, the active alternatives (IXXH50N60B3 or FGH40N60SMD-F085) are preferred due to guaranteed long-term availability and regulatory compliance.

Q: Are there thermal considerations when substituting these parts?

A: Yes. The IXXH50N60B3 features lower on-state voltage (1.8V vs. 3V at comparable test conditions), resulting in reduced conduction losses and improved thermal performance. The FGH40N60SMD-F085 and NGTB40N60L2WG have on-state voltages closer to the original part (2.5V and 2.61V respectively). All substitute parts maintain the same TO-247-3 package, allowing use of existing heatsink assemblies. Thermal design review is recommended for applications operating at maximum power dissipation.

Q: What is the impact of different gate charge values on circuit design?

A: Gate charge affects the gate drive circuit requirements and switching speed. The IXXH50N60B3 has significantly lower gate charge (70nC vs. 190nC), requiring less gate drive energy and enabling faster switching. The FGH40N60SMD-F085 (180nC) and NGTB40N60L2WG (228nC) have gate charge values comparable to or higher than the original part. Gate drive circuits designed for the IXSH40N60A will operate with all listed substitutes, though optimized gate drive design may improve efficiency with lower gate charge parts.

Q: Which substitute part is recommended for new designs?

A: The IXXH50N60B3 is recommended for new designs. It offers active production status, ROHS3 compliance, superior electrical performance characteristics, and the highest current and power ratings among the substitutes. The FGH40N60SMD-F085 is recommended for applications requiring automotive qualification (AEC-Q101) and extended temperature range operation.