IXSH35N140A IGBT Equivalent & Substitute Parts

Part Overview

The IXSH35N140A is a PT-type IGBT manufactured by IXYS, rated for 1400V collector-emitter breakdown voltage and 70A continuous collector current with a maximum power dissipation of 300W. This component is housed in a TO-247-3 through-hole package and is classified as obsolete product status.

Due to its obsolete classification, sourcing new units from the original manufacturer is no longer available through standard distribution channels. Identifying equivalent substitute parts with compatible electrical and mechanical specifications is necessary to maintain design continuity and ensure system reliability in applications requiring IGBT functionality within the specified voltage and current parameters.

Substiute Parts

IXSH35N140A

IXYSIn Stock: 1469IXSH35N140A Datasheet

Current PartRFQ

STGWA40H120DF2

STMicroelectronicsIn Stock: 15429STGWA40H120DF2 Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IXSH35N140A requires evaluation of electrical performance parameters that directly impact circuit operation. The primary substitution criteria are:

Voltage Rating Compatibility: The substitute part must have a collector-emitter breakdown voltage rating equal to or greater than 1400V to ensure safe operation under maximum voltage stress conditions.

Current Rating Compatibility: The substitute part must have a continuous collector current (Ic) rating equal to or greater than 70A to handle the design load without thermal stress or current limiting.

Power Dissipation Capability: The substitute part must have a maximum power rating equal to or greater than 300W to accommodate thermal losses in the application.

Package Compatibility: The substitute part must use the TO-247-3 through-hole package to ensure mechanical fit and thermal interface compatibility with existing PCB layouts and heatsink mounting arrangements.

Input Type Compatibility: The substitute part must feature standard input type gate drive characteristics to maintain compatibility with existing gate drive circuitry.

The STGWA40H120DF2 from STMicroelectronics is identified as a substitute part. While this part operates at a lower voltage rating (1200V versus 1400V), it exceeds the current rating requirement (80A versus 70A) and power dissipation capability (468W versus 300W), and maintains the same TO-247-3 package and through-hole mounting configuration.

Parameter Comparison

Engineering Selection Recommendations

The STGWA40H120DF2 is available as an active product from STMicroelectronics with current manufacturing and distribution support, addressing the obsolescence constraint of the IXSH35N140A. Both components share identical TO-247-3 package specifications and through-hole mounting configurations, ensuring mechanical compatibility with existing PCB designs and thermal management interfaces.

The STGWA40H120DF2 provides superior current handling capability (80A versus 70A) and power dissipation capacity (468W versus 300W), offering design margin in applications operating near the original part's rated limits. The substitute part achieves lower on-state voltage (2.6V versus 4.0V at comparable test conditions), resulting in reduced conduction losses and improved thermal performance.

The voltage rating differential (1200V versus 1400V) represents a design constraint that must be evaluated against application maximum voltage requirements. Applications operating at voltages exceeding 1200V cannot use this substitute without circuit redesign.

Both components maintain REACH compliance and carry unlimited moisture sensitivity level (MSL 1) ratings. The STGWA40H120DF2 holds ROHS3 compliance certification, meeting current environmental regulatory requirements.

Frequently Asked Questions (FAQ)

Q: Can the STGWA40H120DF2 directly replace the IXSH35N140A in all applications?

A: Direct replacement is possible only in applications where the maximum operating voltage does not exceed 1200V. The STGWA40H120DF2 has a lower voltage rating (1200V versus 1400V). Applications designed for the full 1400V rating of the original part require circuit evaluation and potential redesign.

Q: What are the mechanical compatibility considerations between these parts?

A: Both the IXSH35N140A and STGWA40H120DF2 use identical TO-247-3 through-hole packages with the same pin configuration and mounting footprint. PCB layouts and heatsink mounting arrangements designed for the original part are mechanically compatible with the substitute without modification.

Q: How do the electrical performance characteristics differ?

A: The STGWA40H120DF2 exhibits lower on-state voltage (2.6V versus 4.0V), resulting in reduced conduction losses. The substitute part has higher gate charge (158nC versus 120nC), requiring slightly increased gate drive energy. The STGWA40H120DF2 provides faster turn-on switching (18ns versus 40ns) with comparable turn-off characteristics (152ns versus 150ns).

Q: What is the significance of the IGBT type difference (PT versus Trench Field Stop)?

A: The IXSH35N140A uses a planar technology (PT) design, while the STGWA40H120DF2 employs trench field stop technology. These represent different semiconductor manufacturing approaches. The trench field stop design in the substitute part contributes to lower on-state voltage and improved switching performance characteristics.

Q: Are there compliance or certification differences between these parts?

A: The STGWA40H120DF2 holds active ROHS3 compliance certification, while the IXSH35N140A compliance status is not specified. Both parts maintain REACH compliance and unlimited moisture sensitivity level ratings. The substitute part's active product status ensures ongoing compliance with current environmental regulations.

Q: What thermal performance differences should be considered?

A: The STGWA40H120DF2 supports a higher maximum junction temperature (175°C versus 150°C), providing additional thermal margin. The lower on-state voltage of the substitute part reduces conduction losses, decreasing thermal generation in the component itself. Both parts use identical TO-247-3 packages with equivalent thermal interface characteristics.

Q: How does gate charge affect gate drive circuit design?

A: The STGWA40H120DF2 requires higher gate charge (158nC versus 120nC) compared to the original part. Existing gate drive circuits must supply sufficient charge capacity to fully drive the substitute part. Gate drive circuits with marginal charge capacity may require component upgrades to ensure reliable switching performance.