IXSH30N60CD1 IGBT 600V 55A Equivalent & Substitute Parts

Part Overview

The IXSH30N60CD1 is a 600V, 55A IGBT manufactured by IXYS in a through-hole TO-247AD package. This component is classified as obsolete, necessitating identification of functionally equivalent alternatives for ongoing design requirements and production continuity. The part delivers 200W maximum power dissipation with standard input gate drive characteristics suitable for industrial switching applications.

Substiute Parts

IXSH30N60CD1
IXYSIn Stock: 5802IXSH30N60CD1 Datasheet
IXSH30N60CD1
Current Part
IXXH30N60C3D1
IXYSIn Stock: 1424IXXH30N60C3D1 Datasheet
IXXH30N60C3D1
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AOK30B60D1
Alpha & Omega Semiconductor Inc.In Stock: 5045AOK30B60D1 Datasheet
AOK30B60D1
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STGW30V60DF
STMicroelectronicsIn Stock: 10234STGW30V60DF Datasheet
STGW30V60DF
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Key Parameters

Parameter Value Unit
Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 55 A
Current - Collector Pulsed (Icm) 110 A
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 30A V
Power - Max 200 W
Switching Energy (off) 700 µJ
Gate Charge 100 nC
Td (on/off) @ 25°C 30/90 ns
Reverse Recovery Time (trr) 50 ns
Operating Temperature Range -55 to 150 °C (TJ)
Mounting Type Through Hole -
Package / Case TO-247-3 -
Input Type Standard -

Substitute Part Grouping Explanation

Substitution eligibility for the IXSH30N60CD1 is determined by the following critical parameters:

Mandatory Compatibility Criteria:

  • Voltage rating: 600V minimum (Collector-Emitter Breakdown)
  • Current rating: Minimum 55A continuous (Ic Max)
  • Package type: TO-247-3 through-hole configuration
  • Input type: Standard gate drive
  • Operating temperature range: Minimum -55°C to 150°C

Acceptable Variation Parameters:

  • Collector current above 55A (uprated designs)
  • Pulsed current (Icm) above 110A
  • Power dissipation above 200W
  • Lower Vce(on) values (improved efficiency)
  • Lower switching energy (improved performance)
  • Lower gate charge (reduced drive requirements)
  • Faster switching times (reduced losses)
  • Lower reverse recovery time (improved commutation)
  • Extended upper temperature rating (enhanced reliability)

Three substitute parts meet these criteria while maintaining electrical and mechanical compatibility with the original IXSH30N60CD1 specification.

Parameter Comparison

Parameter IXSH30N60CD1 IXXH30N60C3D1 AOK30B60D1 STGW30V60DF
Manufacturer IXYS IXYS Alpha & Omega Semiconductor Inc. STMicroelectronics
Product Status Obsolete Active Active Active
Voltage - Collector Emitter Breakdown (Max) 600 V 600 V 600 V 600 V
Current - Collector (Ic) (Max) 55 A 60 A 60 A 60 A
Current - Collector Pulsed (Icm) 110 A 110 A 96 A 120 A
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 30A 2.3V @ 15V, 24A 2.4V @ 15V, 26A 2.3V @ 15V, 30A
Power - Max 200 W 270 W 208 W 258 W
Switching Energy (on) - 500 µJ 1.1 mJ 383 µJ
Switching Energy (off) 700 µJ 270 µJ 240 µJ 233 µJ
Gate Charge 100 nC 37 nC 34 nC 163 nC
Td (on/off) @ 25°C 30/90 ns 23/77 ns 20/58 ns 45/189 ns
Reverse Recovery Time (trr) 50 ns 25 ns 120 ns 53 ns
Operating Temperature Range -55 to 150 °C (TJ) -55 to 175 °C (TJ) -55 to 150 °C (TJ) -55 to 175 °C (TJ)
Package / Case TO-247-3 TO-247-3 TO-247-3 TO-247-3
Input Type Standard Standard Standard Standard
Mounting Type Through Hole Through Hole Through Hole Through Hole
RoHS Status - ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant
REACH Status REACH Unaffected REACH Unaffected REACH Unaffected REACH Unaffected

Engineering Selection Recommendations

IXXH30N60C3D1 (IXYS GenX3™/XPT™ Series)

This substitute offers the most direct replacement path. As an active IXYS product, it maintains manufacturer continuity while delivering superior performance characteristics. The IXXH30N60C3D1 provides 60A continuous current (5A above original specification), 270W power dissipation (70W above original), and significantly reduced switching energy (270µJ off-state versus 700µJ). Gate charge reduction to 37nC (from 100nC) decreases gate drive requirements. Extended operating temperature to 175°C provides enhanced thermal margin. ROHS3 compliance and unlimited moisture sensitivity rating (MSL 1) support modern manufacturing standards.

AOK30B60D1 (Alpha & Omega Semiconductor Alpha IGBT™ Series)

This substitute provides equivalent voltage and current ratings with 60A continuous capability. The AOK30B60D1 delivers the lowest switching delay times (20ns on, 58ns off) and reduced gate charge (34nC), optimizing for high-frequency applications. Power dissipation of 208W exceeds the original specification. Operating temperature range matches the original (-55°C to 150°C). ROHS3 compliance and MSL 1 rating ensure compatibility with current supply chain requirements. This option suits applications prioritizing switching speed and gate drive efficiency.

STGW30V60DF (STMicroelectronics Trench Field Stop Technology)

This substitute employs advanced Trench Field Stop IGBT technology, delivering 60A continuous current and 258W power dissipation. The STGW30V60DF provides the highest pulsed current rating (120A) and extended operating temperature to 175°C. Switching energy characteristics (383µJ on, 233µJ off) represent a balanced performance profile. Higher gate charge (163nC) requires proportionally increased gate drive capability compared to other substitutes. ROHS3 compliance and MSL 1 rating support modern manufacturing environments.

All three substitutes maintain TO-247-3 through-hole packaging, standard gate input type, and REACH compliance with the original component. Selection depends on application-specific priorities: manufacturer continuity (IXXHS), switching speed optimization (AOK30B), or advanced technology platform (STGW30V60DF).

Frequently Asked Questions (FAQ)

Q: Can the IXXH30N60C3D1 directly replace the IXSH30N60CD1 in existing designs?

A: Yes. Both components share identical voltage rating (600V), TO-247-3 package configuration, and standard gate input type. The IXXH30N60C3D1 exceeds the original current specification (60A versus 55A) and provides improved switching characteristics. No circuit modifications are required for electrical compatibility. Thermal design should account for the higher power dissipation capability (270W versus 200W).

Q: What are the key differences between the three substitute options?

A: The IXXH30N60C3D1 prioritizes switching energy reduction and gate charge minimization. The AOK30B60D1 emphasizes fastest switching times with lowest delay parameters. The STGW30V60DF offers the highest pulsed current capability and advanced technology platform. All three maintain voltage, current, and package compatibility with the original IXSH30N60CD1.

Q: Does the higher gate charge of the STGW30V60DF (163nC) present a compatibility issue?

A: The higher gate charge requires proportionally increased gate drive current and energy compared to the IXXH30N60C3D1 (37nC) and AOK30B60D1 (34nC). Existing gate drive circuits must supply sufficient current to charge the gate within acceptable switching time windows. Circuit simulation or bench testing confirms gate drive adequacy for the selected substitute.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. The IXXH30N60C3D1, AOK30B60D1, and STGW30V60DF all carry ROHS3 Compliant certification. The original IXSH30N60CD1 does not specify RoHS status. All four components maintain REACH Unaffected status.

Q: What is the significance of the extended operating temperature range in the IXXH30N60C3D1 and STGW30V60DF?

A: Both active substitutes support junction temperatures to 175°C, compared to the original 150°C maximum. This extended range provides additional thermal margin in high-ambient or high-dissipation applications, improving reliability and reducing thermal stress on the semiconductor die.

Q: Can the AOK30B60D1 be used in applications requiring the lowest switching losses?

A: The AOK30B60D1 delivers the fastest switching times (20ns on, 58ns off) among the three substitutes, minimizing switching energy losses in high-frequency applications. However, the IXXH30N60C3D1 provides lower absolute switching energy values (500µJ on, 270µJ off), making it preferable for applications where total energy dissipation is the primary concern.

Q: Is the TO-247-3 package identical across all substitute parts?

A: Yes. All three substitutes employ the TO-247-3 through-hole package configuration, ensuring mechanical and thermal interface compatibility with the original IXSH30N60CD1. Mounting hardware, heatsink interfaces, and PCB footprints require no modification.

Q: What inventory status should influence substitute selection?

A: The STGW30V60DF maintains the highest inventory level (10,200 pcs), followed by the AOK30B60D1 (4,992 pcs) and IXXH30N60C3D1 (1,315 pcs). Long-term production programs should prioritize parts with established active status and robust supply availability.

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