IXSH30N60B IGBT Equivalent & Substitute Parts

Part Overview

The IXSH30N60B is a 600V, 55A power transistor (IGBT) manufactured by IXYS in a TO-247-3 through-hole package. This component is classified as obsolete, making identification of functionally equivalent alternatives necessary for ongoing system support, design updates, and procurement continuity. The IXSH30N60B serves in high-voltage switching applications requiring rated collector current of 55A and maximum power dissipation of 200W.

Key Parameters

Parameter	Value	Unit
Voltage - Collector Emitter Breakdown (Max)	600	V
Current - Collector (Ic) (Max)	55	A
Current - Collector Pulsed (Icm)	110	A
Power - Max	200	W
Vce(on) (Max) @ Vge, Ic	2V @ 15V, 30A	V
Gate Charge	100	nC
Switching Energy (off)	1.5	mJ
Td (on/off) @ 25°C	30/150	ns
Operating Temperature Range	-55 to 150	°C (TJ)
Package / Case	TO-247-3	—
Mounting Type	Through Hole	—

Substitute Part Grouping Explanation

Substitute parts for the IXSH30N60B are selected based on strict electrical and mechanical compatibility criteria. The following parameters define acceptable substitution:

Primary Matching Criteria:

Voltage rating: 600V collector-emitter breakdown voltage (exact match required)
Package type: TO-247-3 through-hole configuration (mechanical compatibility)
Input type: Standard gate drive (functional compatibility)
Mounting: Through-hole technology (board-level compatibility)

Secondary Compatibility Parameters:

Collector current (Ic): Minimum 55A to meet or exceed original specification
Pulsed collector current (Icm): Minimum 110A to support transient conditions
Power dissipation: Minimum 200W to handle thermal load
Operating temperature range: Minimum -55°C to 150°C (full range match preferred)

Acceptable Variation Ranges:

Vce(on): Values between 2.0V and 2.4V at specified test conditions are functionally equivalent
Gate charge: Values up to 163nC are acceptable for standard gate drive circuits
Switching delays: Variations in Td(on/off) do not preclude substitution if within typical gate driver specifications

Both substitute parts (AOK30B60D1 and STGW30V60DF) meet or exceed all primary and secondary criteria, confirming electrical and mechanical compatibility with the IXSH30N60B.

Parameter Comparison

Parameter	IXSH30N60B (Main)	AOK30B60D1	STGW30V60DF	Unit
Manufacturer	IXYS	Alpha & Omega Semiconductor Inc.	STMicroelectronics	—
Product Status	Obsolete	Active	Active	—
Voltage - Collector Emitter Breakdown (Max)	600	600	600	V
Current - Collector (Ic) (Max)	55	60	60	A
Current - Collector Pulsed (Icm)	110	96	120	A
Vce(on) (Max) @ Vge, Ic	2V @ 15V, 30A	2.4V @ 15V, 26A	2.3V @ 15V, 30A	V
Power - Max	200	208	258	W
Gate Charge	100	34	163	nC
Td (on/off) @ 25°C	30/150	20/58	45/189	ns
Operating Temperature Range	-55 to 150	-55 to 150	-55 to 175	°C (TJ)
Package / Case	TO-247-3	TO-247-3	TO-247-3	—
Mounting Type	Through Hole	Through Hole	Through Hole	—
RoHS Status	Not specified	ROHS3 Compliant	ROHS3 Compliant	—
REACH Status	REACH Unaffected	REACH Unaffected	REACH Unaffected	—

Engineering Selection Recommendations

AOK30B60D1 (Alpha & Omega Semiconductor Inc.)

The AOK30B60D1 is an active product with ROHS3 compliance and REACH unaffected status. This part exceeds the IXSH30N60B in collector current (60A vs. 55A) and power rating (208W vs. 200W). The AOK30B60D1 features reduced gate charge (34nC vs. 100nC) and faster switching times (20ns/58ns vs. 30ns/150ns), resulting in lower gate drive power requirements and improved switching efficiency. The pulsed collector current (96A) is slightly below the original specification (110A) but remains within acceptable operating margins for most applications. This part is suitable for direct replacement in applications where active product status and modern compliance certifications are required.

STGW30V60DF (STMicroelectronics)

The STGW30V60DF is an active product with ROHS3 compliance and REACH unaffected status. This part features Trench Field Stop technology and exceeds the IXSH30N60B in collector current (60A vs. 55A), pulsed current (120A vs. 110A), and power rating (258W vs. 200W). The operating temperature range extends to 175°C (vs. 150°C), providing enhanced thermal margin. Gate charge is higher (163nC vs. 100nC), and switching delays are longer (45ns/189ns vs. 30ns/150ns), which may require gate driver circuit evaluation in timing-critical applications. This part is suitable for applications requiring maximum thermal headroom and higher pulsed current capability.

Selection Basis

Both substitute parts are active products with current manufacturing support and modern regulatory compliance. The IXSH30N60B is obsolete and no longer manufactured. Selection between AOK30B60D1 and STGW30V60DF depends on application-specific requirements: AOK30B60D1 for reduced gate drive complexity and faster switching, or STGW30V60DF for maximum power handling and thermal performance.

Frequently Asked Questions (FAQ)

Q: Can the AOK30B60D1 or STGW30V60DF be used as direct replacements for the IXSH30N60B without circuit modifications?

A: Both parts are mechanically and electrically compatible as direct replacements in TO-247-3 through-hole applications. However, gate drive circuits should be evaluated for compatibility with the different gate charge values (AOK30B60D1: 34nC, STGW30V60DF: 163nC vs. original 100nC). Switching time variations may affect timing-sensitive circuits.

Q: What is the significance of the pulsed collector current (Icm) difference between the IXSH30N60B (110A) and AOK30B60D1 (96A)?

A: The AOK30B60D1 pulsed current rating of 96A remains within acceptable operating margins for most applications. Pulsed current specifications define transient overload capability. Applications with sustained pulsed currents exceeding 96A should use the STGW30V60DF (120A rating).

Q: Are there compliance or regulatory differences between the substitute parts?

A: Both substitute parts are ROHS3 compliant and REACH unaffected. The IXSH30N60B compliance status is not specified. For applications requiring documented ROHS3 compliance, either substitute part is suitable.

Q: How do switching time differences affect circuit performance?

A: The AOK30B60D1 features faster switching (20ns/58ns vs. 30ns/150ns), reducing switching losses and gate drive power. The STGW30V60DF has slower switching (45ns/189ns), which may increase switching losses but typically does not affect circuit functionality in standard applications. Gate driver circuits should be verified for compatibility with the specified switching characteristics.

Q: What is the impact of different Vce(on) values on thermal design?

A: Vce(on) values range from 2.0V (IXSH30N60B) to 2.4V (AOK30B60D1) at specified test conditions. Higher Vce(on) increases conduction losses and heat dissipation. Thermal designs should account for the worst-case Vce(on) value (2.4V) to ensure adequate heatsinking.

Q: Can the STGW30V60DF be used in applications with maximum operating temperature of 150°C?

A: Yes. The STGW30V60DF is rated to 175°C junction temperature, exceeding the 150°C requirement. This provides additional thermal margin and does not preclude use in lower-temperature applications.

Q: What packaging format is supplied for these substitute parts?

A: Both AOK30B60D1 and STGW30V60DF are supplied in tube packaging. The IXSH30N60B packaging format is not specified in the provided data.

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