IXSH24N60B IGBT Equivalent & Substitute Parts

Part Overview

The IXSH24N60B is an IGBT (Insulated Gate Bipolar Transistor) rated for 600V collector-emitter breakdown voltage with a maximum collector current of 48A and 150W power dissipation. Manufactured by IXYS, this device is packaged in a TO-247-3 through-hole configuration and is classified as obsolete. Due to its obsolete product status, equivalent and substitute parts from active product lines are necessary for new designs and ongoing production requirements. Substitute devices must maintain electrical compatibility within the 600V voltage class while accommodating application-specific current and power requirements.

Substiute Parts

IXSH24N60B

IXYSIn Stock: 900IXSH24N60B Datasheet

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IXXH30N60B3

IXYSIn Stock: 3475IXXH30N60B3 Datasheet

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STGFW20V60DF

STMicroelectronicsIn Stock: 1586STGFW20V60DF Datasheet

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STGW20V60DF

STMicroelectronicsIn Stock: 1477STGW20V60DF Datasheet

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STGW40H60DLFB

STMicroelectronicsIn Stock: 1344STGW40H60DLFB Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution of the IXSH24N60B is determined by the following critical parameters:

Mandatory Compatibility Criteria:

• Voltage - Collector Emitter Breakdown: 600V (all substitutes must match this rating)
• Mounting Type: Through Hole (mechanical compatibility)
• Package / Case: TO-247-3 or compatible through-hole packages
• Input Type: Standard (gate drive compatibility)

Application-Dependent Criteria:

• Current - Collector (Ic) (Max): Substitute must equal or exceed 48A
• Power - Max: Substitute must equal or exceed 150W
• Operating Temperature Range: Substitute must cover or exceed -55°C to 150°C

Performance Considerations:

• Vce(on): Lower values indicate improved efficiency
• Gate Charge: Affects gate drive circuit requirements
• Switching Energy: Influences switching losses and thermal management

Substitutes are grouped based on whether they maintain the 600V voltage class while providing equal or superior current handling and power dissipation capabilities within compatible package formats.

Parameter Comparison

Engineering Selection Recommendations

Primary Substitute: IXXH30N60B3

The IXXH30N60B3 is the recommended primary substitute for the IXSH24N60B. Both devices are manufactured by IXYS and share the same 600V voltage rating and TO-247-3 package. The IXXH30N60B3 exceeds the current specification (60A vs. 48A) and power rating (270W vs. 150W), providing design margin for thermal and electrical performance. The IXXH30N60B3 features lower Vce(on) (1.85V vs. 2.5V), resulting in reduced conduction losses. The device is classified as Active with ROHS3 compliance and an extended operating temperature range (-55°C to 175°C vs. -55°C to 150°C). Inventory availability is substantial at 3400 units.

Secondary Substitute: STGW20V60DF

The STGW20V60DF is an active STMicroelectronics product rated for 600V with a TO-247-3 package. This device is suitable for applications where the 48A current requirement can be met by the 40A rating with appropriate thermal management. The power rating of 167W exceeds the 150W requirement. The STGW20V60DF employs Trench Field Stop technology, which differs from the PT technology of the IXSH24N60B. This device is ROHS3 compliant with 1430 units in stock.

Tertiary Substitute: STGW40H60DLFB

The STGW40H60DLFB provides the highest current and power ratings (80A, 283W) among available substitutes. This device is suitable for applications requiring design margin beyond the original 48A specification. The TO-247-3 package maintains mechanical compatibility. The higher gate charge (210nC) requires verification of gate drive circuit capability. This device is Active and ROHS3 compliant with 1234 units available.

Not Recommended: STGFW20V60DF

The STGFW20V60DF is classified as Obsolete and does not provide a viable long-term solution. Additionally, the TO-3PF package differs from the TO-247-3 requirement, introducing mechanical incompatibility.

Frequently Asked Questions (FAQ)

Q: Can the IXXH30N60B3 directly replace the IXSH24N60B in existing designs?

A: The IXXH30N60B3 is electrically compatible as a direct replacement. Both devices share the 600V voltage rating, TO-247-3 package, and standard gate drive input type. The higher current and power ratings of the IXXH30N60B3 provide design margin. Gate drive circuits designed for the IXSH24N60B (41nC gate charge) will operate with the IXXH30N60B3 (39nC gate charge) without modification. Thermal management should be verified to ensure the application can accommodate the improved efficiency characteristics.

Q: What is the difference between PT and Trench Field Stop IGBT technologies?

A: PT (Punch-Through) and Trench Field Stop are different IGBT architectures. The IXSH24N60B uses PT technology, while STGW20V60DF and STGW40H60DLFB use Trench Field Stop technology. Both technologies operate at 600V and are compatible with standard gate drive circuits. Trench Field Stop devices typically exhibit different switching characteristics and thermal behavior. Application-specific performance validation is required when transitioning between these technologies.

Q: Is the STGW20V60DF suitable for applications requiring 48A continuous current?

A: The STGW20V60DF is rated for 40A maximum collector current, which is below the 48A requirement of the IXSH24N60B. This device is not suitable for applications requiring continuous 48A operation. The IXXH30N60B3 (60A) or STGW40H60DLFB (80A) are appropriate alternatives for 48A applications.

Q: What are the package compatibility considerations?

A: The IXSH24N60B uses a TO-247-3 package. Direct substitutes must use the same TO-247-3 package or a compatible through-hole package. The IXXH30N60B3 and STGW20V60DF and STGW40H60DLFB all use TO-247-3 packages and are mechanically compatible. The STGFW20V60DF uses a TO-3PF package and requires different PCB footprint and mounting hardware, making it unsuitable for direct replacement.

Q: Are all substitute parts RoHS compliant?

A: The IXXH30N60B3, STGW20V60DF, and STGW40H60DLFB are all ROHS3 compliant. The original IXSH24N60B does not specify RoHS status. All substitute parts meet current environmental compliance requirements.

Q: How do gate charge differences affect circuit design?

A: The IXSH24N60B has a gate charge of 41nC. The IXXH30N60B3 has 39nC (similar), while STGW20V60DF has 116nC and STGW40H60DLFB has 210nC (significantly higher). Gate charge affects the energy required to switch the device and influences gate drive circuit design. Devices with higher gate charge require more gate current or longer switching times. Existing gate drive circuits designed for 41nC will operate with the IXXH30N60B3 without modification but may require optimization for the higher gate charge devices.

Q: What is the operating temperature range consideration?

A: The IXSH24N60B operates from -55°C to 150°C (TJ). All substitute parts extend this range to -55°C to 175°C (TJ), providing additional thermal margin. Applications operating near the upper temperature limit of the original device will benefit from the extended range of substitute devices.