IXRH40N120 IGBT Equivalent & Substitute Parts

Part Overview

The IXRH40N120 is an NPT (Non-Punch Through) IGBT rated for 1200V collector-emitter breakdown voltage with a maximum collector current of 55A and 300W power dissipation. The device is packaged in TO-247-3 through-hole configuration and is classified as obsolete. Due to its obsolete status, equivalent substitute parts from active manufacturers are necessary for new designs and ongoing production requirements. Substitute devices maintain the same voltage and current ratings while offering improved switching characteristics and extended temperature operating ranges.

Key Parameters

Parameter	Value	Unit
Voltage - Collector Emitter Breakdown (Max)	1200	V
Current - Collector (Ic) (Max)	55	A
Power - Max	300	W
Vce(on) (Max) @ Vge, Ic	2.7V @ 15V, 30A	V
IGBT Type	NPT	—
Gate Charge	90	nC
Reverse Recovery Time (trr)	2.1	µs
Operating Temperature Range	-55 to 150	°C (TJ)
Package / Case	TO-247-3	—
Mounting Type	Through Hole	—
Product Status	Obsolete	—

Substitute Part Grouping Explanation

Substitution of the IXRH40N120 is determined by the following critical parameters:

Mandatory Matching Criteria:

Voltage - Collector Emitter Breakdown: 1200V minimum
Current - Collector (Ic): 50A or greater
Package / Case: TO-247-3 through-hole configuration
Input Type: Standard gate drive

Performance Enhancement Criteria: Substitute parts may feature improved switching energy characteristics, reduced reverse recovery time, and extended operating temperature ranges compared to the obsolete NPT technology. Modern Trench Field Stop IGBT technology provides lower on-state voltage drop and faster switching transitions while maintaining voltage and current compatibility.

Acceptable Substitutes: All listed substitute parts meet or exceed the mandatory matching criteria. Devices rated at 1200V or 1250V with collector currents of 50A to 80A in TO-247-3 packaging are functionally compatible. The STGWA40H120DF2 provides higher current capability (80A) for applications requiring additional margin. The STGW28IH125DF operates at 1250V, providing enhanced voltage headroom.

Parameter Comparison

Parameter	IXRH40N120	FGH25T120SMD-F155	NGTB30N120L2WG	STGW25H120F2	STGW25M120DF3	STGW28IH125DF	STGWA25M120DF3	STGWA40H120DF2
Voltage - Collector Emitter Breakdown (Max)	1200V	1200V	1200V	1200V	1200V	1250V	1200V	1200V
Current - Collector (Ic) (Max)	55A	50A	60A	50A	50A	60A	50A	80A
Power - Max	300W	428W	534W	375W	375W	375W	375W	468W
Vce(on) (Max) @ Vge, Ic	2.7V @ 15V, 30A	2.4V @ 15V, 25A	—	2.6V @ 15V, 25A	2.3V @ 15V, 25A	2.5V @ 15V, 25A	2.3V @ 15V, 25A	2.6V @ 15V, 40A
IGBT Type	NPT	Trench Field Stop	—	Trench Field Stop	Trench Field Stop	Trench Field Stop	Trench Field Stop	Trench Field Stop
Gate Charge	90nC	225nC	—	100nC	85nC	114nC	85nC	158nC
Operating Temperature Range	-55 to 150°C	-55 to 175°C	-55 to 175°C	-55 to 175°C	-55 to 175°C	-55 to 175°C	-55 to 175°C	-55 to 175°C
Package / Case	TO-247-3	TO-247-3	TO-247	TO-247-3	TO-247-3	TO-247-3	TO-247-3	TO-247-3
Product Status	Obsolete	Active	Active	Active	Active	Active	Active	Active
RoHS Status	—	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

Primary Substitutes for Direct Replacement:

The STGW25M120DF3 and STGWA25M120DF3 are the closest functional equivalents to the IXRH40N120. Both devices are rated at 1200V with 50A collector current, matching the voltage specification and providing adequate current margin above the 55A rating of the original part. These STMicroelectronics devices feature Trench Field Stop technology with lower on-state voltage (2.3V) compared to the NPT design, resulting in reduced power dissipation. Both parts are ROHS3 compliant and active in production with extended operating temperature ranges to 175°C.

Higher Current Capability Alternative:

The STGWA40H120DF2 provides 80A collector current rating with 468W power dissipation, offering significant design margin for applications requiring higher current capacity or thermal headroom. This device maintains 1200V voltage rating and TO-247-3 packaging while delivering improved switching performance through Trench Field Stop technology.

Enhanced Voltage Margin Option:

The STGW28IH125DF operates at 1250V collector-emitter breakdown voltage, providing 50V additional voltage headroom over the 1200V specification. This device is rated for 60A collector current and is suitable for applications where voltage margin is a design requirement.

Compliance and Production Status:

All recommended substitute parts are active in production status with ROHS3 compliance certification. The IXRH40N120 obsolete status necessitates transition to active alternatives. All substitute devices maintain REACH Unaffected status and EAR99 ECCN classification consistent with the original part.

Frequently Asked Questions (FAQ)

Q: Can the STGW25M120DF3 directly replace the IXRH40N120 in existing designs?

A: The STGW25M120DF3 is electrically compatible as a substitute. Both devices are rated for 1200V operation with 50A or greater collector current capability. The TO-247-3 package is identical. The primary difference is IGBT technology: the STGW25M120DF3 uses Trench Field Stop technology versus the NPT design of the IXRH40N120. This results in lower on-state voltage and improved switching characteristics. Gate drive requirements are identical (standard input type). Thermal design should account for the improved efficiency of the substitute device.

Q: What is the difference between TO-247-3 and TO-247 packaging?

A: TO-247-3 and TO-247 refer to the same three-lead through-hole package configuration. The NGTB30N120L2WG is specified as TO-247 packaging and is mechanically compatible with TO-247-3 footprints. The STGWA25M120DF3 is specified with TO-247 Long Leads variant, which maintains the same electrical interface but features extended lead length for specific PCB mounting requirements.

Q: Why do substitute parts have higher gate charge values?

A: Gate charge varies with IGBT technology and current rating. The FGH25T120SMD-F155 specifies 225nC gate charge compared to 90nC for the IXRH40N120. Higher gate charge reflects the Trench Field Stop technology and 50A current rating. Gate charge affects gate drive circuit design but does not prevent substitution. Gate drivers rated for standard input type IGBTs accommodate the specified gate charge range of these devices.

Q: Is the STGWA40H120DF2 suitable for applications designed for 55A operation?

A: The STGWA40H120DF2 with 80A rating is suitable for applications designed for 55A operation. The higher current rating provides design margin and does not create compatibility issues. The device maintains 1200V voltage rating and TO-247-3 packaging. The higher gate charge (158nC) requires verification that the gate drive circuit can supply the specified charge within the required switching time. The improved switching performance of Trench Field Stop technology may reduce switching losses compared to the original NPT design.

Q: What is the significance of the 1250V rating on the STGW28IH125DF?

A: The STGW28IH125DF operates at 1250V collector-emitter breakdown voltage, providing 50V additional voltage margin compared to the 1200V specification of the IXRH40N120. This device is suitable for applications where enhanced voltage headroom is required or where system voltage may approach the 1200V limit. The 60A current rating and 375W power dissipation provide adequate performance for the 55A design requirement.

Q: Are all substitute parts ROHS3 compliant?

A: All listed substitute parts are ROHS3 compliant. The IXRH40N120 does not specify RoHS status. All active production alternatives meet ROHS3 requirements, ensuring compliance with current environmental and regulatory standards for new designs and production.

Q: What is the impact of reverse recovery time differences on circuit performance?

A: The IXRH40N120 specifies 2.1µs reverse recovery time, while the FGH25T120SMD-F155 specifies 60ns. Lower reverse recovery time in modern Trench Field Stop devices reduces switching losses and electromagnetic interference. The STGW25M120DF3 specifies 265ns reverse recovery time. These differences do not prevent substitution but indicate improved switching performance in substitute devices. Circuit design should account for reduced switching losses when transitioning to devices with lower reverse recovery time.

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