IXKP10N60C5 N-Channel 600V 10A MOSFET Equivalent & Substitute Parts

Part Overview

The IXKP10N60C5 is an N-Channel MOSFET manufactured by IXYS in the CoolMOS™ series, rated for 600V drain-to-source voltage and 10A continuous drain current at 25°C. The device is packaged in a through-hole TO-220-3 configuration and is compliant with RoHS3 and REACH standards.

This part is classified as obsolete. Equivalent and substitute parts are necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements. The substitute parts listed maintain electrical and mechanical compatibility within the specified parameter ranges.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	600	V
Continuous Drain Current (Id) @ 25°C	10	A
Drive Voltage (Max Rds On)	10	V
Rds On (Max) @ Id, Vgs	385 mOhm @ 5.2A, 10V	mOhm
Gate Threshold Voltage Vgs(th) (Max) @ Id	3.5	V @ 340µA
Gate Charge (Qg) (Max) @ Vgs	22	nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	790	pF @ 100V
Operating Temperature Range	-55 to 150	°C (TJ)
Package Type	TO-220-3	Through Hole
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)

Substitute Part Grouping Explanation

Substitute parts for the IXKP10N60C5 are selected based on strict electrical and mechanical parameter compatibility. The following criteria determine substitution eligibility:

Critical Parameters (Must Match or Exceed):

Drain to Source Voltage (Vdss): 600V minimum
Continuous Drain Current (Id) @ 25°C: 10A minimum
Package Type: TO-220-3 through-hole configuration
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature Range: -55°C to 150°C minimum

Secondary Parameters (Within Acceptable Range):

Drive Voltage (Max Rds On): 10V
Gate Threshold Voltage: Compatible with 10V gate drive
Gate Charge: Lower values acceptable (faster switching)
Input Capacitance: Acceptable within switching application requirements

All substitute parts listed maintain these electrical specifications and physical compatibility with the original IXKP10N60C5 design.

Parameter Comparison

Parameter	IXKP10N60C5	AOT11S60L	STP11NM60ND	STP13N60M2	STP13NM60N	STP13NM60ND	STP15N60M2-EP
Manufacturer	IXYS	Alpha & Omega Semiconductor Inc.	STMicroelectronics	STMicroelectronics	STMicroelectronics	STMicroelectronics	STMicroelectronics
Vdss (V)	600	600	600	600	600	600	600
Id @ 25°C (A)	10	11	10	11	11	11	11
Drive Voltage (V)	10	10	10	10	10	10	10
Rds On (Max) @ Id, Vgs (mOhm)	385 @ 5.2A, 10V	399 @ 3.8A, 10V	450 @ 5A, 10V	380 @ 5.5A, 10V	360 @ 5.5A, 10V	380 @ 5.5A, 10V	378 @ 5.5A, 10V
Vgs(th) (Max) @ Id (V)	3.5 @ 340µA	4.1 @ 250µA	5 @ 250µA	4 @ 250µA	4 @ 250µA	5 @ 250µA	4 @ 250µA
Gate Charge (Qg) (Max) @ 10V (nC)	22	11	30	17	30	24.5	17
Ciss (Max) @ Vds (pF)	790 @ 100V	545 @ 100V	850 @ 50V	580 @ 100V	790 @ 50V	845 @ 50V	590 @ 100V
Operating Temperature (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150
Package	TO-220-3	TO-220-3	TO-220-3	TO-220-3	TO-220-3	TO-220-3	TO-220-3
FET Type	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
REACH Status	REACH Unaffected	REACH Unaffected	REACH Unaffected	REACH Unaffected	REACH Unaffected	REACH Unaffected	REACH Unaffected
Product Status	Obsolete	Not For New Designs	Active	Active	Active	Active	Active

Engineering Selection Recommendations

Primary Recommendation for New Designs:

The STMicroelectronics STP13NM60ND is the preferred substitute for the IXKP10N60C5. This part is classified as Active product status, ensuring long-term availability and supply chain stability. The STP13NM60ND meets all critical electrical parameters with 600V Vdss, 11A continuous drain current, and TO-220-3 package compatibility. The device maintains full RoHS3 compliance and REACH unaffected status. Gate charge of 24.5 nC at 10V and Rds On of 380 mOhm at 5.5A, 10V provide performance characteristics suitable for direct substitution in existing circuit designs.

Secondary Recommendations:

STP13N60M2 and STP15N60M2-EP are alternative active products from STMicroelectronics with equivalent electrical specifications. Both devices feature lower gate charge (17 nC) compared to the original part, resulting in faster switching characteristics. These parts are suitable for applications where reduced switching losses are beneficial.

STP11NM60ND is an active STMicroelectronics product with matching 10A continuous drain current specification. This part is appropriate for designs where exact current rating alignment is required.

Not Recommended for New Designs:

AOT11S60L from Alpha & Omega Semiconductor Inc. carries a "Not For New Designs" product status classification. While electrically compatible, this part should not be selected for new circuit development due to its obsolescence trajectory.

All recommended substitute parts maintain compliance with RoHS3 and REACH regulatory requirements, ensuring compatibility with current manufacturing and environmental standards.

Frequently Asked Questions (FAQ)

Q: Can the STP13NM60ND directly replace the IXKP10N60C5 in existing designs?

A: Yes. The STP13NM60ND maintains electrical compatibility across all critical parameters: 600V Vdss, 11A continuous drain current (exceeds the 10A requirement), 10V drive voltage, and TO-220-3 package configuration. Pin-to-pin compatibility is maintained. The device operates across the same temperature range (-55°C to 150°C) and meets identical regulatory compliance standards.

Q: What is the difference between the substitute parts listed?

A: All substitute parts share the same 600V Vdss rating, 10V drive voltage, and TO-220-3 package. Primary differences exist in continuous drain current (10A vs. 11A), gate charge (ranging from 11 nC to 30 nC), and on-resistance characteristics. These variations affect switching speed and power dissipation but do not prevent substitution within the specified electrical envelope.

Q: Why is the IXKP10N60C5 classified as obsolete?

A: The IXKP10N60C5 is no longer in active production. Substitute parts from active product lines ensure continued availability and support for ongoing manufacturing requirements.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All substitute parts listed are RoHS3 compliant and REACH unaffected, matching the regulatory status of the original IXKP10N60C5.

Q: What is the significance of gate charge differences among substitute parts?

A: Gate charge (Qg) affects switching speed and gate drive circuit requirements. Lower gate charge values (such as 11 nC in AOT11S60L or 17 nC in STP13N60M2) result in faster switching transitions and reduced gate drive power consumption. Higher values (30 nC in STP11NM60ND and STP13NM60N) require longer switching times but may provide improved noise characteristics in certain applications.

Q: Can I use a substitute part with higher continuous drain current rating?

A: Yes. Substitute parts rated for 11A continuous drain current exceed the 10A requirement of the IXKP10N60C5 and are fully compatible. Higher current ratings provide additional design margin without compromising circuit functionality.

Q: What is the difference between TO-220 and TO-220-3 package designations?

A: TO-220-3 and TO-220 refer to the same three-lead through-hole package configuration used for power MOSFETs. All substitute parts use this identical package type, ensuring mechanical and thermal compatibility with the original design.

Q: Should I select a part marked "Not For New Designs"?

A: No. Parts with "Not For New Designs" status, such as AOT11S60L, should not be used in new circuit development. These parts are appropriate only for sustaining production of existing designs where supply continuity is required. For new designs, select from parts with Active product status.

Q: Are there thermal considerations when substituting these parts?

A: All substitute parts operate across the same junction temperature range (-55°C to 150°C) as the original IXKP10N60C5. Power dissipation varies slightly due to differences in on-resistance and gate charge. Thermal design calculations should account for the specific Rds On and power dissipation characteristics of the selected substitute part.

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