IXKN40N60C Equivalent & Substitute Parts

Part Overview

The IXKN40N60C is an N-Channel MOSFET manufactured by IXYS, rated for 600V drain-to-source voltage with 40A continuous drain current at 25°C. This device operates in the CoolMOS™ series and is housed in a SOT-227B chassis mount package. The part is Active in product status with full RoHS3 compliance and unlimited moisture sensitivity rating.

Substitute parts are identified when equivalent electrical performance can be achieved within the specified parameter tolerances, accounting for differences in package type, thermal characteristics, and voltage ratings that may affect circuit integration requirements.

Substiute Parts

IXKN40N60C
IXYSIn Stock: 956IXKN40N60C Datasheet
IXKN40N60C
Current Part
STF25N80K5
STMicroelectronicsIn Stock: 1456STF25N80K5 Datasheet
STF25N80K5
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Key Parameters

Parameter Value Unit
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 40 A (Tc)
Rds On (Max) @ Id, Vgs 70 mOhm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs 250 nC @ 10V
Vgs(th) (Max) @ Id 3.9 V @ 2.5mA
Power Dissipation (Max) 290 W (Tc)
Operating Temperature Range -40 to 150 °C (TJ)
Mounting Type Chassis Mount SOT-227B
Vgs (Max) ±20 V

Substitute Part Grouping Explanation

Substitution eligibility for the IXKN40N60C is determined by the following critical electrical parameters:

Primary Substitution Criteria:

  • FET Type: N-Channel topology
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): Minimum 600V rating required
  • Current - Continuous Drain (Id): Minimum 40A at 25°C required
  • Rds On (Max): Performance within acceptable on-resistance limits
  • Gate Charge (Qg): Switching characteristics compatibility
  • Operating Temperature Range: Minimum -40°C to 150°C required
  • Product Status: Active
  • Compliance: RoHS3 and REACH requirements

The STF25N80K5 is identified as a substitute part based on N-Channel MOSFET topology and Active product status. However, this substitute exhibits reduced continuous drain current (19.5A versus 40A) and lower power dissipation (40W versus 290W), indicating application-specific suitability rather than direct functional equivalence.

Parameter Comparison

Parameter IXKN40N60C STF25N80K5 Unit
Manufacturer IXYS STMicroelectronics
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 800 V
Current - Continuous Drain (Id) @ 25°C 40 19.5 A (Tc)
Rds On (Max) @ Vgs 10V 70 @ 500mA 260 @ 19.5A mOhm
Gate Charge (Qg) (Max) @ Vgs 250 @ 10V 40 @ 10V nC
Vgs(th) (Max) @ Id 3.9 @ 2.5mA 5 @ 100µA V
Vgs (Max) ±20 ±30 V
Power Dissipation (Max) 290 40 W (Tc)
Operating Temperature Range -40 to 150 -55 to 150 °C (TJ)
Mounting Type Chassis Mount Through Hole
Package / Case SOT-227-4, miniBLOC TO-220-3 Full Pack
Product Status Active Active
RoHS Status ROHS3 Compliant ROHS3 Compliant
REACH Status REACH Unaffected REACH Unaffected

Engineering Selection Recommendations

IXKN40N60C (Primary Part): The IXKN40N60C remains the specified component for applications requiring 40A continuous drain current at 600V rating with 290W power dissipation capability. This part is Active in product status with full RoHS3 compliance and REACH unaffected designation. The chassis mount SOT-227B package provides direct thermal coupling for high-power applications. Current inventory of 931 pieces supports immediate procurement.

STF25N80K5 (Substitute Part): The STF25N80K5 is suitable for applications with reduced current requirements (19.5A maximum continuous drain current) and lower power dissipation (40W). The higher voltage rating (800V) provides additional design margin in high-voltage circuits. This part is Active in product status with equivalent RoHS3 compliance and REACH unaffected designation. The through-hole TO-220FP package requires different PCB layout and thermal management approach compared to the chassis mount configuration. Current inventory of 1420 pieces is available.

Selection between these parts depends on circuit current and power dissipation requirements. The STF25N80K5 cannot replace the IXKN40N60C in applications requiring the full 40A continuous current specification.

Frequently Asked Questions (FAQ)

Q: Can the STF25N80K5 directly replace the IXKN40N60C in existing designs?

A: Direct replacement is not possible for applications requiring 40A continuous drain current. The STF25N80K5 is rated for 19.5A maximum continuous drain current, representing a 51% reduction in current capacity. Circuit redesign and thermal analysis are required if substitution is considered.

Q: What are the key differences in package type between these parts?

A: The IXKN40N60C uses a SOT-227B chassis mount package with direct thermal coupling to a mounting surface. The STF25N80K5 uses a TO-220FP through-hole package requiring different PCB footprint design and thermal management strategy. These package types are not mechanically interchangeable.

Q: Are both parts compliant with current regulatory requirements?

A: Both the IXKN40N60C and STF25N80K5 are RoHS3 compliant and REACH unaffected. Both parts maintain Active product status with unlimited moisture sensitivity rating (MSL 1).

Q: How do the on-resistance specifications compare?

A: The IXKN40N60C specifies 70mOhm maximum on-resistance at 500mA and 10V gate-source voltage. The STF25N80K5 specifies 260mOhm maximum on-resistance at 19.5A and 10V gate-source voltage. These measurements are taken at different current levels and are not directly comparable for performance evaluation.

Q: What is the significance of the voltage rating difference?

A: The IXKN40N60C is rated for 600V drain-to-source voltage, while the STF25N80K5 is rated for 800V. The higher voltage rating of the STF25N80K5 provides additional design margin in high-voltage applications but does not indicate superior performance in 600V circuits.

Q: How do gate charge specifications affect circuit design?

A: The IXKN40N60C specifies 250nC maximum gate charge at 10V, while the STF25N80K5 specifies 40nC maximum gate charge at 10V. Lower gate charge in the STF25N80K5 results in faster switching transitions and reduced gate driver power requirements, but this advantage is offset by the reduced current capacity.

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