IXKK85N60C N-Channel 600V 85A MOSFET Equivalent & Substitute Parts

Part Overview

The IXKK85N60C is an N-Channel MOSFET manufactured by IXYS, rated for 600V drain-to-source voltage with 85A continuous drain current at 25°C. This device is part of the CoolMOS™ series and is housed in a TO-264AA through-hole package. The part is currently in active production status with 1099 units available in stock.

Substitute parts become necessary when the primary device reaches end-of-life status, when inventory constraints occur, or when design requirements necessitate alternative package configurations or electrical performance characteristics. The FCH041N60F represents a viable alternative that maintains critical electrical parameters while offering different packaging and thermal characteristics.

Substiute Parts

IXKK85N60C
IXYSIn Stock: 1146IXKK85N60C Datasheet
IXKK85N60C
Current Part
FCH041N60F
onsemiIn Stock: 18297FCH041N60F Datasheet
FCH041N60F
Similar

Key Parameters

Parameter Value Unit
Drain-to-Source Voltage (Vdss) 600 V
Continuous Drain Current (Id) @ 25°C 85 A
Drive Voltage (Max Rds On) 10 V
Rds On (Max) @ Id, Vgs 36 mOhm
Gate Threshold Voltage (Vgs(th)) @ Id 4 V @ 4mA
Gate Charge (Qg) @ Vgs 650 nC @ 10V
Maximum Gate Voltage (Vgs) ±20 V
Operating Temperature Range -55 to 150 °C (TJ)
Package Type TO-264AA Through Hole
RoHS Status ROHS3 Compliant

Substitute Part Grouping Explanation

Substitution of the IXKK85N60C is determined by the following critical electrical and mechanical parameters:

Electrical Compatibility Criteria:

  • Drain-to-Source Voltage (Vdss): Must equal or exceed 600V
  • Continuous Drain Current (Id): Must support 85A or higher at 25°C
  • Gate Drive Voltage: Must operate at 10V maximum Rds On specification
  • Gate Threshold Voltage: Must be compatible with 4V @ 4mA specification
  • Maximum Gate Voltage: Must support ±20V operation

Mechanical Compatibility Criteria:

  • Mounting Type: Through-hole configuration required
  • Package Classification: TO-264AA or equivalent through-hole packages acceptable
  • Thermal Performance: Operating temperature range -55°C to 150°C (TJ)

Compliance Requirements:

  • RoHS3 Compliance mandatory
  • REACH Unaffected status required

The FCH041N60F meets the voltage and temperature specifications but operates at a reduced continuous drain current of 76A and exhibits different on-resistance characteristics. This substitute is suitable for applications where the 76A rating is sufficient and the TO-247-3 package configuration is acceptable.

Parameter Comparison

Parameter IXKK85N60C (Main) FCH041N60F (Substitute) Unit
Manufacturer IXYS onsemi
Drain-to-Source Voltage (Vdss) 600 600 V
Continuous Drain Current (Id) @ 25°C 85 76 A
Drive Voltage (Max Rds On) 10 10 V
Rds On (Max) @ Id, Vgs 36 @ 55A 41 @ 38A mOhm
Gate Threshold Voltage (Vgs(th)) @ Id 4 @ 4mA 5 @ 250µA V
Gate Charge (Qg) @ Vgs 650 @ 10V 360 @ 10V nC
Maximum Gate Voltage (Vgs) ±20 ±20 V
Operating Temperature Range -55 to 150 -55 to 150 °C (TJ)
Package Type TO-264AA TO-247-3 Through Hole
Product Status Active Not For New Designs
RoHS Status ROHS3 Compliant ROHS3 Compliant

Engineering Selection Recommendations

Primary Part Selection: The IXKK85N60C remains the preferred selection for new designs. The device maintains active production status, ensuring long-term availability and supply chain stability. Full RoHS3 compliance and REACH unaffected status confirm regulatory alignment for current and future applications.

Substitute Part Considerations: The FCH041N60F is classified as "Not For New Designs" by the manufacturer. This status indicates the device is in mature or declining production phase. Selection of this substitute is appropriate only for legacy system maintenance, repair operations, or applications where the reduced 76A continuous drain current specification is acceptable within the design margin.

Package Transition: The FCH041N60F uses TO-247-3 packaging versus the IXKK85N60C TO-264AA package. Both are through-hole configurations with different mechanical footprints and thermal characteristics. PCB layout modifications are required for package substitution.

Current Rating Differential: The 9A reduction in continuous drain current (85A to 76A) must be evaluated against application thermal and electrical load requirements. The FCH041N60F exhibits lower gate charge (360 nC versus 650 nC), which may provide switching speed advantages in specific circuit topologies.

Frequently Asked Questions (FAQ)

Q: Can the FCH041N60F directly replace the IXKK85N60C without PCB modifications?

A: No. The FCH041N60F uses TO-247-3 packaging while the IXKK85N60C uses TO-264AA packaging. These packages have different pin configurations and mechanical footprints. PCB layout redesign is required for physical and electrical compatibility.

Q: What is the significance of the "Not For New Designs" status on the FCH041N60F?

A: This designation indicates the manufacturer has discontinued active development and is phasing out production. The device remains available for existing applications and repair operations but should not be selected for new product development. Long-term availability cannot be guaranteed.

Q: Is the 76A continuous drain current of the FCH041N60F sufficient as a substitute?

A: Sufficiency depends on application requirements. The 76A rating represents a 10.6% reduction from the IXKK85N60C specification. Applications operating at or near the 85A maximum rating require thermal and electrical margin analysis to confirm the substitute is acceptable.

Q: How do the on-resistance specifications compare between these devices?

A: The IXKK85N60C specifies 36 mOhm maximum at 55A and 10V gate drive. The FCH041N60F specifies 41 mOhm maximum at 38A and 10V gate drive. Direct comparison is limited due to different measurement conditions. The FCH041N60F exhibits higher on-resistance at lower current levels.

Q: Are both devices RoHS3 compliant?

A: Yes. Both the IXKK85N60C and FCH041N60F carry ROHS3 Compliant certification and REACH Unaffected status, confirming regulatory compliance for current environmental standards.

Q: What is the impact of the different gate charge specifications?

A: The FCH041N60F gate charge is 360 nC compared to 650 nC for the IXKK85N60C. Lower gate charge typically results in faster switching transitions and reduced gate drive power requirements. This may provide circuit performance benefits in high-frequency switching applications.

Q: Can the IXKK85N60C be used in applications originally designed for the FCH041N60F?

A: Yes. The IXKK85N60C exceeds the electrical specifications of the FCH041N60F (higher current rating, lower on-resistance, and active production status). Package compatibility must be verified for the specific PCB design.

Request Quote (Ships tomorrow)