IXGT32N60C Equivalent & Substitute Parts

Part Overview

The IXGT32N60C is an IGBT (Insulated Gate Bipolar Transistor) rated for 600V collector-emitter breakdown voltage with a maximum collector current of 60A and 200W power dissipation. This device is manufactured by IXYS and packaged in a Surface Mount TO-268AA configuration. The part is classified as obsolete, necessitating identification of functionally equivalent alternatives for new designs and ongoing production requirements.

Key Parameters

Parameter	Value	Unit
Voltage - Collector Emitter Breakdown (Max)	600	V
Current - Collector (Ic) (Max)	60	A
Current - Collector Pulsed (Icm)	120	A
Power - Max	200	W
Vce(on) (Max)	2.5	V @ 15V, 32A
Gate Charge	110	nC
Operating Temperature Range	-55 to 150	°C (TJ)
Mounting Type	Surface Mount	TO-268AA
Product Status	Obsolete	-

Substitute Part Grouping Explanation

Substitution of the IXGT32N60C is determined by matching the following critical electrical parameters:

Voltage rating: 600V collector-emitter breakdown voltage
Current rating: 60A maximum collector current with 120A pulsed capability
Power dissipation capability: minimum 200W
Input type: Standard gate drive
Operating temperature range: Minimum -55°C to 150°C junction temperature

The STGW30V60DF meets these electrical specifications while offering enhanced performance characteristics. Both devices operate at identical voltage and current ratings with compatible gate drive requirements. The substitute part provides higher power dissipation (258W versus 200W) and an extended maximum operating temperature (175°C versus 150°C). Package differences exist between the main part (Surface Mount TO-268AA) and the substitute (Through Hole TO-247-3), requiring circuit board layout modifications.

Parameter Comparison

Parameter	IXGT32N60C	STGW30V60DF	Unit
Manufacturer	IXYS	STMicroelectronics	-
Voltage - Collector Emitter Breakdown (Max)	600	600	V
Current - Collector (Ic) (Max)	60	60	A
Current - Collector Pulsed (Icm)	120	120	A
Power - Max	200	258	W
Vce(on) (Max)	2.5	2.3	V @ 15V, 30-32A
Gate Charge	110	163	nC
Input Type	Standard	Standard	-
Operating Temperature Range	-55 to 150	-55 to 175	°C (TJ)
Mounting Type	Surface Mount	Through Hole	-
Package / Case	TO-268-3 (D³Pak)	TO-247-3	-
Product Status	Obsolete	Active	-
REACH Status	REACH Unaffected	REACH Unaffected	-
ECCN	EAR99	EAR99	-

Engineering Selection Recommendations

The STGW30V60DF is the qualified substitute for the obsolete IXGT32N60C based on electrical parameter equivalence and active product status. The substitute device is manufactured by STMicroelectronics and maintains active production status, ensuring long-term availability and supply chain continuity.

Both devices share identical voltage and current ratings (600V, 60A) with matching pulsed current capability (120A). The STGW30V60DF provides superior thermal performance with 258W maximum power dissipation compared to the 200W rating of the IXGT32N60C, and extends the maximum junction temperature to 175°C. Both devices comply with REACH regulations and carry EAR99 export classification.

The primary design consideration is the package transition from Surface Mount TO-268AA to Through Hole TO-247-3. This substitution requires circuit board redesign to accommodate the different lead configuration and mounting footprint. The gate charge increase from 110nC to 163nC necessitates gate drive circuit evaluation to ensure adequate drive capability.

Frequently Asked Questions (FAQ)

Q: Can the STGW30V60DF directly replace the IXGT32N60C without circuit modifications?

A: Electrical substitution is valid based on voltage, current, and gate drive compatibility. However, the package change from Surface Mount TO-268AA to Through Hole TO-247-3 requires circuit board layout modifications. Direct socket replacement is not possible.

Q: What are the key electrical differences between these devices?

A: Both devices operate at 600V and 60A ratings. The STGW30V60DF offers lower on-state voltage (2.3V versus 2.5V), higher power dissipation capability (258W versus 200W), and extended temperature range (-55°C to 175°C versus -55°C to 150°C). Gate charge is higher in the substitute (163nC versus 110nC).

Q: Does the higher gate charge of the STGW30V60DF affect gate drive circuit design?

A: Gate charge increase from 110nC to 163nC requires evaluation of the existing gate drive circuit. The drive circuit must supply sufficient current to charge the gate within the required switching time. Existing circuits designed for the IXGT32N60C may require adjustment or redesign.

Q: Are both devices RoHS compliant?

A: The IXGT32N60C does not specify RoHS status in the provided data. The STGW30V60DF is RoHS3 compliant. Compliance requirements should be verified against specific application and regional standards.

Q: What is the impact of the lower Vce(on) in the STGW30V60DF?

A: The lower on-state voltage (2.3V versus 2.5V) in the STGW30V60DF results in reduced conduction losses and improved thermal performance. This is a beneficial characteristic for power dissipation and efficiency.

Q: Are there supply chain considerations for this substitution?

A: The IXGT32N60C is obsolete with limited inventory availability. The STGW30V60DF is an active product with 10,200 pieces in stock, providing reliable long-term supply and production continuity.

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