IXGR50N60B2 Equivalent & Substitute Parts

Part Overview

The IXGR50N60B2 is an IGBT (Insulated Gate Bipolar Transistor) rated for 600V collector-emitter breakdown voltage with a maximum collector current of 68A and 200W power dissipation. This device is packaged in the TO-247-3 form factor (ISOPLUS247™) and is designed for through-hole mounting applications. The part is classified as obsolete, making identification of functionally equivalent alternatives necessary for ongoing design support, maintenance, and production continuity.

Substiute Parts

IXGR50N60B2

IXYSIn Stock: 985IXGR50N60B2 Datasheet

Current PartRFQ

FGH40N60SMD-F085

onsemiIn Stock: 800FGH40N60SMD-F085 Datasheet

SimilarRFQ

NGTB40N60L2WG

onsemiIn Stock: 812NGTB40N60L2WG Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution of the IXGR50N60B2 is determined by strict alignment of electrical and mechanical parameters. The following criteria establish substitution validity:

Primary Substitution Criteria:

• Voltage rating: 600V collector-emitter breakdown voltage (exact match required)
• Package type: TO-247-3 through-hole mounting (exact match required)
• Input type: Standard gate drive (exact match required)
• Current capability: Minimum 68A collector current (equal or greater)
• Power dissipation: Minimum 200W (equal or greater)

Secondary Compatibility Factors:

• Gate charge: Acceptable range 140nC to 228nC (affects gate drive circuit design)
• Switching energy: Acceptable range 280µJ to 1.17mJ (off-state energy)
• Operating temperature: Minimum -55°C to 150°C (equal or greater upper limit)
• IGBT type: Standard, Field Stop, or Trench Field Stop architectures are functionally compatible

The substitute parts FGH40N60SMD-F085 and NGTB40N60L2WG meet all primary criteria and are therefore valid electrical and mechanical substitutes for the IXGR50N60B2.

Parameter Comparison

Engineering Selection Recommendations

FGH40N60SMD-F085 (onsemi)

This substitute is classified as active product status, ensuring ongoing availability and technical support. The device exceeds the IXGR50N60B2 in collector current (80A vs. 68A) and power dissipation (349W vs. 200W), providing design margin. The FGH40N60SMD-F085 features Field Stop IGBT architecture with improved switching performance (110ns turn-off vs. 190ns). Operating temperature range extends to 175°C, exceeding the original part's 150°C maximum. The device carries AEC-Q101 automotive qualification and ROHS3 compliance, supporting applications requiring automotive-grade reliability. Gate charge of 180nC is within acceptable substitution range.

NGTB40N60L2WG (onsemi)

This substitute employs Trench Field Stop IGBT technology and meets all primary electrical and mechanical criteria. Collector current and power dissipation ratings (80A, 417W) exceed the original part. Operating temperature extends to 175°C. The device is ROHS3 compliant. However, this part is classified as obsolete, limiting long-term availability. Gate charge of 228nC and switching energy characteristics differ more significantly from the original part compared to the FGH40N60SMD-F085. Turn-on delay increases to 98ns (vs. 18ns original), which may affect circuit timing in applications with tight switching requirements.

Primary Recommendation: FGH40N60SMD-F085 is the preferred substitute due to active product status, superior switching performance, and automotive qualification.

Frequently Asked Questions (FAQ)

Q: Can the FGH40N60SMD-F085 directly replace the IXGR50N60B2 without circuit modifications?

A: Yes. Both devices share identical voltage rating (600V), package type (TO-247-3), and input type (Standard gate drive). The FGH40N60SMD-F085 exceeds the current and power ratings of the original part, providing design margin. Gate charge difference (180nC vs. 140nC) may require gate drive circuit evaluation if operating at maximum switching frequency, but direct pin-compatible substitution is mechanically and electrically valid.

Q: Why does the NGTB40N60L2WG have higher gate charge than the FGH40N60SMD-F085?

A: Gate charge is determined by IGBT architecture and silicon design. The NGTB40N60L2WG uses Trench Field Stop technology with 228nC gate charge, while the FGH40N60SMD-F085 uses Field Stop technology with 180nC gate charge. Higher gate charge increases gate drive power requirements and may extend switching times in current-limited gate drive circuits.

Q: What is the impact of different switching energy values on circuit design?

A: Switching energy affects power dissipation during transitions. The IXGR50N60B2 specifies 550µJ off-state energy, while substitutes specify 280µJ to 1.17mJ. Lower switching energy reduces thermal load and improves efficiency. The FGH40N60SMD-F085 (300µJ off-state) provides lower switching losses than the original part. Thermal design calculations should account for these differences to ensure adequate heat dissipation.

Q: Is the NGTB40N60L2WG suitable for new designs?

A: The NGTB40N60L2WG is classified as obsolete, making it unsuitable for new production designs. While it meets electrical substitution criteria, obsolete status indicates discontinued manufacturing and limited future availability. The FGH40N60SMD-F085, classified as active, is the appropriate choice for new designs requiring long-term supply assurance.

Q: How do operating temperature ranges affect substitution?

A: The IXGR50N60B2 operates to 150°C junction temperature, while both substitutes extend to 175°C. This provides additional thermal margin in the substitutes. Applications operating near the original part's temperature limit benefit from the extended range of substitute devices. Thermal design should verify that actual junction temperatures remain within specified limits for the selected substitute.

Q: Are there compliance or qualification differences between the substitute parts?

A: The FGH40N60SMD-F085 carries AEC-Q101 automotive qualification and ROHS3 compliance. The NGTB40N60L2WG is ROHS3 compliant but does not specify automotive qualification. Applications requiring automotive-grade reliability should select the FGH40N60SMD-F085. Both parts are REACH unaffected and classified under ECCN EAR99.