IXGR40N60CD1 Equivalent & Substitute Parts

Part Overview

The IXGR40N60CD1 is an IGBT (Insulated Gate Bipolar Transistor) rated for 600V collector-emitter breakdown voltage with a maximum collector current of 75A and 200W power dissipation. This device features the HiPerFAST™ series technology in a Through Hole ISOPLUS247™ package configuration. The part is classified as obsolete, necessitating identification of functionally equivalent alternatives for ongoing design support and procurement continuity.

Key Parameters

Parameter	Value	Unit
Voltage - Collector Emitter Breakdown (Max)	600	V
Current - Collector (Ic) (Max)	75	A
Current - Collector Pulsed (Icm)	150	A
Vce(on) (Max) @ Vge, Ic	2.7V @ 15V, 40A	V
Power - Max	200	W
Gate Charge	116	nC
Td (on/off) @ 25°C	25ns/100ns	ns
Reverse Recovery Time (trr)	3.5	ns
Operating Temperature Range	-55 to 150	°C (TJ)
Package / Case	TO-247-3	-
Mounting Type	Through Hole	-

Substitute Part Grouping Explanation

Substitution of the IXGR40N60CD1 is determined by alignment across the following critical parameters:

Voltage Rating: All substitute parts must maintain the 600V collector-emitter breakdown voltage specification to ensure safe operation within the original circuit design envelope.

Current Rating: Substitute parts must support a minimum collector current (Ic) of 75A. Parts with higher current ratings (80A) are acceptable as they provide equivalent or superior current handling capability.

Package Configuration: All substitutes must use the TO-247-3 Through Hole package to ensure mechanical and thermal compatibility with existing PCB layouts and heatsink mounting arrangements.

Input Type: All parts maintain Standard input type configuration, ensuring gate drive circuit compatibility.

Operating Temperature Range: Substitute parts must support the minimum operating temperature range of -55°C to 150°C. Parts with extended upper temperature limits (175°C) provide additional thermal margin.

IGBT Type Compatibility: The original part uses PT (Punch-Through) technology. Substitute parts employ Field Stop or Trench Field Stop technologies, which represent advanced IGBT architectures offering improved switching characteristics and lower conduction losses while maintaining functional equivalence.

Parameter Comparison

Parameter	IXGR40N60CD1	FGH40N60SMD-F085	NGTB40N60L2WG
Manufacturer	IXYS	onsemi	onsemi
IGBT Type	PT	Field Stop	Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)	600 V	600 V	600 V
Current - Collector (Ic) (Max)	75 A	80 A	80 A
Current - Collector Pulsed (Icm)	150 A	120 A	160 A
Vce(on) (Max) @ Vge, Ic	2.7V @ 15V, 40A	2.5V @ 15V, 40A	2.61V @ 15V, 40A
Power - Max	200 W	349 W	417 W
Gate Charge	116 nC	180 nC	228 nC
Td (on/off) @ 25°C	25ns/100ns	18ns/110ns	98ns/213ns
Reverse Recovery Time (trr)	3.5 ns	47 ns	73 ns
Operating Temperature Range	-55 to 150°C	-55 to 175°C	-55 to 175°C
Package / Case	TO-247-3	TO-247-3	TO-247-3
Mounting Type	Through Hole	Through Hole	Through Hole
Product Status	Obsolete	Active	Obsolete

Engineering Selection Recommendations

FGH40N60SMD-F085 (onsemi): This part is classified as Active product status, ensuring long-term availability and supply chain continuity. It meets all critical electrical parameters with 80A collector current capability, exceeding the original 75A requirement. The part carries AEC-Q101 automotive qualification and ROHS3 compliance, indicating production under stringent quality standards. The Field Stop IGBT technology delivers lower on-state voltage (2.5V) compared to the original part, reducing conduction losses. Extended operating temperature range to 175°C provides additional thermal margin. This part is suitable for direct substitution in applications requiring active product support and automotive-grade reliability.

NGTB40N60L2WG (onsemi): This part is classified as Obsolete product status, similar to the original IXGR40N60CD1. While it meets voltage and current requirements with 80A capability, its obsolete status does not provide long-term procurement assurance. The Trench Field Stop technology offers higher power dissipation capability (417W) and superior pulsed current handling (160A). However, the increased gate charge (228 nC) and longer switching delays (98ns/213ns) indicate different switching characteristics that may require gate drive circuit evaluation. This part is suitable only when long-term supply is not a requirement or when the enhanced pulsed current capability is specifically needed.

Frequently Asked Questions (FAQ)

Q: Can FGH40N60SMD-F085 be used as a direct replacement for IXGR40N60CD1?

A: Yes. Both parts share identical voltage rating (600V), compatible current ratings (80A vs. 75A), and identical TO-247-3 package configuration. The FGH40N60SMD-F085 is Active product status, providing superior long-term availability compared to the obsolete IXGR40N60CD1.

Q: What are the differences in switching performance between these parts?

A: The IXGR40N60CD1 exhibits faster turn-on (25ns) and turn-off (100ns) delays with lower gate charge (116 nC). The FGH40N60SMD-F085 has slightly faster turn-on (18ns) but similar turn-off (110ns) with higher gate charge (180 nC). The NGTB40N60L2WG shows significantly slower switching (98ns/213ns) with the highest gate charge (228 nC). Gate drive circuits may require adjustment for the substitute parts.

Q: Are there thermal considerations when substituting these parts?

A: The FGH40N60SMD-F085 and NGTB40N60L2WG both support extended operating temperature to 175°C, compared to 150°C for the original part. Both substitute parts have higher power dissipation ratings (349W and 417W respectively), indicating improved thermal performance. Existing heatsink designs will remain compatible due to identical TO-247-3 package configuration.

Q: What is the impact of different IGBT technologies on circuit performance?

A: The original IXGR40N60CD1 uses PT (Punch-Through) technology. The FGH40N60SMD-F085 uses Field Stop technology, and the NGTB40N60L2WG uses Trench Field Stop technology. These represent successive generations of IGBT architecture. Field Stop and Trench Field Stop technologies typically offer lower on-state voltage and improved switching characteristics, but may exhibit different reverse recovery behavior (47 ns and 73 ns respectively, compared to 3.5 ns for the original part).

Q: Is the FGH40N60SMD-F085 suitable for automotive applications?

A: Yes. The FGH40N60SMD-F085 carries AEC-Q101 automotive qualification and ROHS3 compliance, making it suitable for automotive-grade applications. The IXGR40N60CD1 and NGTB40N60L2WG do not carry automotive qualification markings.

Q: What is the significance of the higher gate charge in substitute parts?

A: Higher gate charge (180 nC for FGH40N60SMD-F085 and 228 nC for NGTB40N60L2WG, compared to 116 nC for the original) requires greater gate drive current to achieve the same switching speed. Gate drive circuits may need adjustment to maintain switching frequency and efficiency targets. Consult gate driver datasheets for current capability requirements.

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