IXGR35N120C Equivalent & Substitute Parts

Part Overview

The IXGR35N120C is a 1200V, 70A IGBT manufactured by IXYS in the HiPerFAST™ series, housed in a TO-247-3 (ISOPLUS247™) package. This component is classified as obsolete, necessitating identification of active equivalent parts for new designs and ongoing production requirements. The part delivers 200W maximum power dissipation with switching characteristics optimized for high-frequency applications. Substitute parts must maintain electrical compatibility across voltage, current, and thermal operating ranges while accommodating the through-hole mounting configuration.

Key Parameters

Parameter	Value	Unit
Voltage - Collector Emitter Breakdown (Max)	1200	V
Current - Collector (Ic) (Max)	70	A
Current - Collector Pulsed (Icm)	140	A
Power - Max	200	W
Vce(on) (Max) @ Vge, Ic	4V @ 15V, 35A	V
Switching Energy (off)	3	mJ
Gate Charge	170	nC
Td (on/off) @ 25°C	50/150	ns
Operating Temperature Range	-55 to 150	°C (TJ)
Package / Case	TO-247-3	-
Mounting Type	Through Hole	-
Input Type	Standard	-

Substitute Part Grouping Explanation

Substitution eligibility for the IXGR35N120C is determined by the following critical parameters:

Mandatory Compatibility Criteria:

Voltage - Collector Emitter Breakdown (Max): 1200V minimum
Package / Case: TO-247-3 (ISOPLUS247™ or equivalent)
Mounting Type: Through Hole
Input Type: Standard
Operating Temperature Range: Must encompass -55°C to 150°C minimum

Performance Matching Criteria:

Current - Collector (Ic) (Max): Minimum 70A to maintain current-handling capability
Power - Max: Minimum 200W to support thermal requirements
Vce(on) characteristics: Lower values indicate improved efficiency

The identified substitute parts meet these criteria with variations in switching energy, gate charge, and advanced IGBT architectures (PT type, Trench Field Stop technology) that provide enhanced performance characteristics while maintaining functional equivalence in the specified application envelope.

Parameter Comparison

Parameter	IXGR35N120C	IXGR24N120C3D1	STGWA40H120DF2
Manufacturer	IXYS	IXYS	STMicroelectronics
Voltage - Collector Emitter Breakdown (Max)	1200 V	1200 V	1200 V
Current - Collector (Ic) (Max)	70 A	48 A	80 A
Current - Collector Pulsed (Icm)	140 A	96 A	160 A
Power - Max	200 W	200 W	468 W
Vce(on) (Max) @ Vge, Ic	4V @ 15V, 35A	4.2V @ 15V, 20A	2.6V @ 15V, 40A
Gate Charge	170 nC	79 nC	158 nC
Td (on/off) @ 25°C	50/150 ns	16/93 ns	18/152 ns
Operating Temperature Range	-55 to 150 °C (TJ)	-55 to 150 °C (TJ)	-55 to 175 °C (TJ)
Package / Case	TO-247-3	TO-247-3	TO-247-3
Mounting Type	Through Hole	Through Hole	Through Hole
Input Type	Standard	Standard	Standard
Product Status	Obsolete	Active	Active
RoHS Status	-	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

IXGR24N120C3D1 (IXYS GenX3™ Series)

This part is suitable for applications where the 70A current requirement can be reduced to 48A maximum. The IXGR24N120C3D1 offers superior switching performance with reduced gate charge (79 nC versus 170 nC) and faster switching times (16/93 ns versus 50/150 ns). The part maintains identical voltage rating and power dissipation capability. Product status is active with ROHS3 compliance, ensuring long-term availability and regulatory alignment. This substitute is optimal for designs prioritizing switching efficiency and reduced gate drive complexity.

STGWA40H120DF2 (STMicroelectronics Trench Field Stop)

This part exceeds the current-handling requirement at 80A maximum and provides superior power dissipation at 468W. The Trench Field Stop architecture delivers lower on-state voltage (2.6V versus 4V), resulting in reduced conduction losses. Extended operating temperature range to 175°C provides additional thermal margin. Product status is active with ROHS3 compliance and high inventory availability (15,354 units). This substitute is optimal for applications requiring higher current capacity, improved efficiency, or extended thermal operating range.

Both substitute parts maintain the TO-247-3 through-hole package configuration, standard input type, and 1200V voltage rating. Selection between substitutes depends on specific application current requirements and thermal design constraints.

Frequently Asked Questions (FAQ)

Q: Can the IXGR24N120C3D1 directly replace the IXGR35N120C in all applications?

A: The IXGR24N120C3D1 is electrically compatible for applications where collector current does not exceed 48A. The 1200V voltage rating, TO-247-3 package, and standard input type are identical. However, applications requiring sustained currents above 48A require the STGWA40H120DF2 or equivalent higher-current device.

Q: What are the key differences between the IXGR24N120C3D1 and STGWA40H120DF2?

A: The IXGR24N120C3D1 is optimized for switching speed with lower gate charge and faster switching times, suitable for high-frequency applications. The STGWA40H120DF2 uses Trench Field Stop technology, delivering lower on-state voltage and higher power dissipation capability, suitable for high-current or high-power applications. Current capacity differs: 48A versus 80A maximum.

Q: Are both substitute parts available in the same packaging as the IXGR35N120C?

A: Yes. Both the IXGR24N120C3D1 and STGWA40H120DF2 use the TO-247-3 package with through-hole mounting, identical to the IXGR35N120C. No PCB layout modifications are required for mechanical compatibility.

Q: What is the significance of the IGBT Type designation (PT versus Trench Field Stop)?

A: IGBT Type indicates the semiconductor architecture. The IXGR24N120C3D1 uses PT (Punch-Through) technology, while the STGWA40H120DF2 uses Trench Field Stop technology. These architectural differences affect switching characteristics and on-state voltage but do not impact functional compatibility for standard gate-drive circuits.

Q: Why does the STGWA40H120DF2 have higher power dissipation (468W) than the IXGR35N120C (200W)?

A: Power dissipation rating reflects the device's thermal capability under specified test conditions. The STGWA40H120DF2's higher rating results from superior thermal design and lower on-state voltage, enabling higher sustained power handling. This does not require increased gate-drive power.

Q: Are there compliance or regulatory differences between the substitute parts?

A: Both substitute parts are ROHS3 compliant and REACH unaffected, meeting current regulatory requirements. The IXGR35N120C does not specify RoHS status due to obsolete classification. Both substitutes are suitable for applications requiring regulatory compliance documentation.

Q: What is the impact of different gate charge values on circuit design?

A: Gate charge (170 nC for IXGR35N120C, 79 nC for IXGR24N120C3D1, 158 nC for STGWA40H120DF2) affects gate-drive current requirements and switching speed. Lower gate charge reduces gate-drive power dissipation and enables faster switching. Existing gate-drive circuits designed for 170 nC will function with lower gate-charge devices, though switching performance will improve.

Q: Can the STGWA40H120DF2 be used in applications designed for 70A operation?

A: Yes. The STGWA40H120DF2 rated at 80A maximum exceeds the 70A requirement and is electrically compatible. The device will operate within specified limits with improved thermal margin and efficiency due to lower on-state voltage.

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