IXGP12N60CD1 Equivalent & Substitute Parts

Part Overview

The IXGP12N60CD1 is an IGBT (Insulated Gate Bipolar Transistor) rated for 600V collector-emitter breakdown voltage with a maximum collector current of 24A and 100W power dissipation. Manufactured by IXYS, this device is packaged in a Through Hole TO-220-3 configuration and belongs to the HiPerFAST™ and Lightspeed™ series.

The IXGP12N60CD1 is classified as obsolete. Identifying equivalent and substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications utilizing this component.

Substiute Parts

IXGP12N60CD1

IXYSIn Stock: 14334IXGP12N60CD1 Datasheet

Current PartRFQ

STGP10H60DF

STMicroelectronicsIn Stock: 1728STGP10H60DF Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IXGP12N60CD1 is determined by the following critical electrical and mechanical parameters:

Voltage Rating: The substitute part must maintain a collector-emitter breakdown voltage of 600V to ensure safe operation within the same voltage domain.

Current Rating: The substitute part must support a minimum collector current (Ic) rating that meets or exceeds the application requirements. The IXGP12N60CD1 specifies 24A maximum continuous current.

Power Dissipation: The substitute part must be capable of dissipating at least 100W to handle the thermal load of the application.

Package Type: The substitute part must use the TO-220-3 Through Hole package to ensure mechanical and thermal compatibility with existing PCB layouts and heatsinking arrangements.

Input Type: The substitute part must feature Standard input type to maintain gate drive compatibility.

Operating Temperature Range: The substitute part must support the required operating temperature range to ensure reliable operation across the application's thermal envelope.

Switching Characteristics: Gate charge, switching delay times (Td on/off), and reverse recovery time (trr) influence circuit performance and must be evaluated for functional compatibility.

Parameter Comparison

Engineering Selection Recommendations

The STGP10H60DF from STMicroelectronics is an active substitute for the obsolete IXGP12N60CD1. Both devices share identical voltage ratings (600V) and package configurations (TO-220-3 Through Hole), ensuring mechanical and thermal compatibility.

The STGP10H60DF maintains compliance with REACH regulations and carries the same ECCN classification (EAR99) as the original part. The substitute device is currently in active production status, providing assured long-term supply availability.

The STGP10H60DF features a Trench Field Stop IGBT architecture, which differs from the standard IGBT type of the IXGP12N60CD1. This technology delivers improved switching characteristics and lower on-state voltage (1.95V versus 2.7V at comparable test conditions), resulting in reduced power dissipation and improved thermal performance.

The collector current rating of the STGP10H60DF is 20A, which is lower than the IXGP12N60CD1's 24A rating. Applications requiring the full 24A continuous current capability must evaluate whether the 20A rating of the substitute part is sufficient for the intended use case. The maximum power dissipation of the STGP10H60DF (115W) exceeds that of the original part (100W), providing additional thermal margin.

The operating temperature range of the STGP10H60DF extends to 175°C, compared to 150°C for the IXGP12N60CD1, offering enhanced high-temperature performance capability.

Gate charge and switching energy parameters differ between the two devices. The STGP10H60DF exhibits higher gate charge (57nC versus 32nC) and higher off-state switching energy (140µJ versus 90µJ), which may influence gate drive circuit design and switching losses in high-frequency applications.

Frequently Asked Questions (FAQ)

Q: Can the STGP10H60DF directly replace the IXGP12N60CD1 in all applications?

A: Direct replacement is possible for applications where the 20A continuous current rating of the STGP10H60DF is sufficient. Applications requiring the full 24A continuous current capability of the IXGP12N60CD1 must verify that the substitute part meets current requirements. Both devices share identical voltage ratings, package types, and input configurations, ensuring mechanical and thermal compatibility.

Q: What are the key differences in switching characteristics between these two devices?

A: The STGP10H60DF exhibits higher gate charge (57nC versus 32nC), which requires greater gate drive energy. The off-state switching energy is higher in the STGP10H60DF (140µJ versus 90µJ). The reverse recovery time is significantly longer in the STGP10H60DF (107ns versus 35ns). These differences may affect switching losses and gate drive circuit design, particularly in high-frequency applications.

Q: Are there thermal or packaging considerations when substituting these parts?

A: Both devices use the TO-220-3 Through Hole package, ensuring identical PCB footprints and heatsinking arrangements. The STGP10H60DF supports a higher maximum junction temperature (175°C versus 150°C), providing additional thermal margin. The improved on-state voltage of the STGP10H60DF (1.95V versus 2.7V) results in lower conduction losses and reduced thermal generation.

Q: What is the impact of the lower on-state voltage in the STGP10H60DF?

A: The STGP10H60DF exhibits lower on-state voltage (Vce(on)) at comparable test conditions, resulting in reduced conduction losses and lower power dissipation during operation. This characteristic improves overall circuit efficiency and reduces thermal load on the heatsink, allowing for smaller thermal management solutions or improved reliability in thermally constrained applications.

Q: Are both devices compliant with regulatory requirements?

A: Both the IXGP12N60CD1 and STGP10H60DF are REACH Unaffected and carry the same ECCN classification (EAR99), ensuring equivalent regulatory compliance for export and use in regulated applications.

Q: What should be evaluated when considering the STGP10H60DF as a substitute?

A: Verify that the 20A continuous current rating meets application requirements. Evaluate the impact of higher gate charge on gate drive circuit design. Assess the effect of increased switching energy and reverse recovery time on circuit performance and switching losses. Confirm that the improved thermal characteristics and extended operating temperature range are compatible with the application's thermal management strategy.