IXGK50N60C2D1 Equivalent & Substitute Parts

Part Overview

The IXGK50N60C2D1 is an IGBT (Insulated Gate Bipolar Transistor) rated for 600V collector-emitter breakdown voltage with a maximum collector current of 75A and 480W power dissipation. Manufactured by IXYS, this device features a PT (Punch-Through) architecture within the HiPerFAST™ series and is housed in a TO-264-3 (TO-264AA) through-hole package. The component is currently in active product status with full RoHS3 compliance and unlimited moisture sensitivity rating.

Identification of equivalent and substitute parts becomes necessary when the primary component experiences supply constraints, inventory limitations, or when design requirements permit operation within the electrical and mechanical parameter tolerances of alternative devices. Substitute parts must maintain compatibility across voltage ratings, current handling capacity, thermal characteristics, and package form factors to ensure functional equivalence in the target application.

Substiute Parts

IXGK50N60C2D1
IXYSIn Stock: 688IXGK50N60C2D1 Datasheet
IXGK50N60C2D1
Current Part
NGTB40N60L2WG
onsemiIn Stock: 812NGTB40N60L2WG Datasheet
NGTB40N60L2WG
Similar

Key Parameters

Parameter Value Unit
Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 75 A
Current - Collector Pulsed (Icm) 300 A
Power - Max 480 W
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 40A V
Gate Charge 138 nC
Switching Energy (off) 380 µJ
Td (on/off) @ 25°C 18/115 ns
Reverse Recovery Time (trr) 35 ns
Operating Temperature Range -55 to 150 °C (TJ)
Package / Case TO-264-3 -
Mounting Type Through Hole -
IGBT Type PT (Punch-Through) -
RoHS Status ROHS3 Compliant -

Substitute Part Grouping Explanation

Substitution of the IXGK50N60C2D1 is evaluated based on the following critical electrical and mechanical parameters:

Voltage Compatibility: The substitute part must maintain a collector-emitter breakdown voltage rating of 600V to ensure safe operation within the same voltage domain.

Current Capacity: The substitute must support a continuous collector current (Ic) rating equal to or greater than 75A. Pulsed current capability (Icm) should be evaluated for transient load conditions.

Power Dissipation: Maximum power rating must be sufficient to handle the 480W specification or the thermal requirements of the target application.

Switching Characteristics: Gate charge, switching delay times (Td on/off), and reverse recovery time (trr) influence circuit performance and EMI characteristics. Substitutes with comparable or superior switching performance are acceptable.

Thermal Range: Operating temperature range must encompass the application's junction temperature requirements. The primary part operates from -55°C to 150°C.

Package Form Factor: Through-hole mounting compatibility is required. Package variants (TO-264-3, TO-247-3) may be acceptable if mechanical integration is feasible within the target PCB layout.

Compliance Status: RoHS3 compliance and REACH unaffected status are mandatory for regulatory alignment.

The NGTB40N60L2WG from onsemi is identified as a substitute part. While this device features a different IGBT architecture (Trench Field Stop versus Punch-Through), it meets the core voltage and current specifications and maintains through-hole mounting compatibility.

Parameter Comparison

Parameter IXGK50N60C2D1 (Main) NGTB40N60L2WG (Substitute) Unit
Manufacturer IXYS onsemi -
Voltage - Collector Emitter Breakdown (Max) 600 600 V
Current - Collector (Ic) (Max) 75 80 A
Current - Collector Pulsed (Icm) 300 160 A
Power - Max 480 417 W
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 40A 2.61V @ 15V, 40A V
Gate Charge 138 228 nC
Switching Energy (off) 380 280 µJ
Td (on/off) @ 25°C 18/115 98/213 ns
Reverse Recovery Time (trr) 35 73 ns
Operating Temperature Range -55 to 150 -55 to 175 °C (TJ)
IGBT Type PT (Punch-Through) Trench Field Stop -
Package / Case TO-264-3 TO-247-3 -
Mounting Type Through Hole Through Hole -
Product Status Active Obsolete -
RoHS Status ROHS3 Compliant ROHS3 Compliant -

Engineering Selection Recommendations

Primary Part Selection: The IXGK50N60C2D1 remains the preferred choice for new designs. The device is in active product status, ensuring long-term availability and supply chain stability. Full RoHS3 compliance and unlimited moisture sensitivity rating support manufacturing scalability.

Substitute Part Consideration: The NGTB40N60L2WG from onsemi is electrically compatible for applications where the primary part is unavailable. The substitute meets the 600V voltage requirement and exceeds the 75A continuous current specification at 80A. However, the following differences require evaluation:

The substitute exhibits higher gate charge (228 nC versus 138 nC), resulting in increased switching losses and slower switching transitions (Td on: 98 ns versus 18 ns; Td off: 213 ns versus 115 ns). These characteristics may increase EMI and thermal dissipation in high-frequency switching applications.

Maximum power dissipation of the substitute (417W) is lower than the primary part (480W), requiring thermal margin verification in power-dense applications.

The substitute operates across a wider temperature range (-55°C to 175°C), providing additional thermal headroom for high-temperature environments.

Package form factor differs (TO-247-3 versus TO-264-3). PCB layout modifications may be necessary to accommodate the different pin configuration and thermal footprint.

The substitute is classified as obsolete, indicating limited future availability. Use of this part is appropriate only for legacy system maintenance or temporary supply mitigation.

Compliance Alignment: Both parts maintain RoHS3 compliance and REACH unaffected status, satisfying regulatory requirements for EU and international markets.

Frequently Asked Questions (FAQ)

Q: Can the NGTB40N60L2WG directly replace the IXGK50N60C2D1 in existing designs?

A: Direct replacement is not recommended without circuit evaluation. While both devices share 600V voltage ratings and comparable continuous current specifications, the substitute exhibits significantly different switching characteristics. The NGTB40N60L2WG has higher gate charge (228 nC versus 138 nC) and slower switching times, which may alter circuit timing, increase switching losses, and affect EMI performance. PCB layout modifications are required due to different package form factors (TO-247-3 versus TO-264-3). Thermal analysis must confirm that the lower maximum power rating (417W versus 480W) is acceptable for the application.

Q: What are the key electrical differences between these two parts?

A: The primary differences are switching speed and gate charge. The IXGK50N60C2D1 features faster switching transitions (Td on: 18 ns; Td off: 115 ns) and lower gate charge (138 nC), resulting in lower switching losses and reduced EMI. The NGTB40N60L2WG exhibits slower switching (Td on: 98 ns; Td off: 213 ns) and higher gate charge (228 nC), typical of Trench Field Stop architecture. Both devices maintain identical 600V voltage ratings and comparable on-state voltage (Vce(on)) at 40A. The substitute provides slightly higher continuous current capacity (80A versus 75A) but lower pulsed current capability (160A versus 300A).

Q: Are there package compatibility issues between these parts?

A: Yes. The IXGK50N60C2D1 uses TO-264-3 (TO-264AA) packaging, while the NGTB40N60L2WG uses TO-247-3 packaging. These packages have different pin configurations, lead spacing, and thermal footprints. Direct socket substitution is not possible. PCB redesign is required to accommodate the different package geometry. Thermal management characteristics may differ due to variations in lead frame design and heat dissipation paths.

Q: What is the impact of higher gate charge on circuit performance?

A: Higher gate charge (228 nC in the substitute versus 138 nC in the primary part) increases the charge that must be supplied or removed during switching transitions. This results in longer switching times, higher switching losses, and increased power dissipation. In gate driver circuits, higher gate charge may require increased driver current capability or modified timing parameters. Applications with tight switching frequency requirements or high-frequency operation may experience performance degradation with the substitute part.

Q: Is the NGTB40N60L2WG suitable for new product designs?

A: No. The NGTB40N60L2WG is classified as obsolete, indicating that onsemi has discontinued active production and support. This part should be used only for legacy system maintenance or temporary supply mitigation during component shortages. New designs must utilize the IXGK50N60C2D1 or other active-status alternatives to ensure long-term supply chain stability and manufacturer support.

Q: How do the thermal operating ranges compare?

A: The IXGK50N60C2D1 operates from -55°C to 150°C junction temperature, while the NGTB40N60L2WG extends to 175°C. The substitute provides an additional 25°C of thermal headroom, which may be beneficial in high-temperature environments. However, the lower maximum power rating of the substitute (417W versus 480W) may limit its effectiveness in applications requiring sustained high-power dissipation at elevated temperatures.

Q: What compliance certifications apply to both parts?

A: Both the IXGK50N60C2D1 and NGTB40N60L2WG are RoHS3 compliant and REACH unaffected. Both carry EAR99 export classification and identical HTSUS codes (8541.29.0095). Moisture sensitivity level is 1 (unlimited) for both devices, indicating no special handling requirements during storage or assembly. These certifications support use in regulated markets including the European Union.

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