IXGH60N60C3 IGBT Equivalent & Substitute Parts

Part Overview

The IXGH60N60C3 is a 600V, 75A IGBT in TO-247-3 package manufactured by IXYS as part of the GenX3™ series. This device is classified as a Punch-Through (PT) type IGBT with a maximum power dissipation of 380W and is designed for through-hole mounting applications. The product status is obsolete, making equivalent and substitute parts necessary for ongoing design support, maintenance, and new production requirements where the original part is no longer available from primary sources.

Substiute Parts

IXGH60N60C3
IXYSIn Stock: 1565IXGH60N60C3 Datasheet
IXGH60N60C3
Current Part
FGH40N60SMD-F085
onsemiIn Stock: 800FGH40N60SMD-F085 Datasheet
FGH40N60SMD-F085
Similar
NGTB40N60L2WG
onsemiIn Stock: 812NGTB40N60L2WG Datasheet
NGTB40N60L2WG
Similar

Key Parameters

Parameter Value Unit
Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 75 A
Current - Collector Pulsed (Icm) 360 A
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 40A V
Power - Max 380 W
Gate Charge 115 nC
Switching Energy (on/off) 800µJ / 450µJ µJ
Td (on/off) @ 25°C 21ns / 70ns ns
Operating Temperature Range -55 to 150 °C (TJ)
Package / Case TO-247-3 -
Mounting Type Through Hole -
IGBT Type Punch-Through (PT) -
RoHS Status ROHS3 Compliant -

Substitute Part Grouping Explanation

Substitution of the IXGH60N60C3 is determined by strict adherence to the following electrical and mechanical parameters:

Critical Substitution Parameters:

  • Voltage rating: 600V minimum (Collector-Emitter Breakdown)
  • Current rating: Minimum 75A continuous (Ic Max)
  • Package: TO-247-3 form factor (through-hole mounting)
  • Vce(on) specification: Maximum 2.5V @ 15V, 40A
  • Operating temperature range: Minimum -55°C to 150°C

Acceptable Variation Ranges:

  • Collector current may exceed 75A (higher current capability is acceptable)
  • Power dissipation may differ from 380W (dependent on Vce(on) and application)
  • Switching characteristics (gate charge, delay times) may vary within application tolerance
  • IGBT type (PT, Field Stop, Trench Field Stop) may differ provided electrical specifications are met

The two substitute parts identified meet these criteria through equivalent or superior electrical performance in the same package configuration.

Parameter Comparison

Parameter IXGH60N60C3 (Main) FGH40N60SMD-F085 NGTB40N60L2WG Unit
Manufacturer IXYS onsemi onsemi -
Voltage - Collector Emitter Breakdown (Max) 600 600 600 V
Current - Collector (Ic) (Max) 75 80 80 A
Current - Collector Pulsed (Icm) 360 120 160 A
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 40A 2.5V @ 15V, 40A 2.61V @ 15V, 40A V
Power - Max 380 349 417 W
Gate Charge 115 180 228 nC
Switching Energy (on) / (off) 800µJ / 450µJ 920µJ / 300µJ 1.17mJ / 280µJ µJ
Td (on/off) @ 25°C 21ns / 70ns 18ns / 110ns 98ns / 213ns ns
Operating Temperature Range -55 to 150 -55 to 175 -55 to 175 °C (TJ)
Package / Case TO-247-3 TO-247-3 TO-247-3 -
IGBT Type Punch-Through (PT) Field Stop Trench Field Stop -
Product Status Obsolete Active Obsolete -
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant -

Engineering Selection Recommendations

FGH40N60SMD-F085 (onsemi)

This substitute is recommended as the primary alternative to the IXGH60N60C3. The FGH40N60SMD-F085 meets all critical electrical parameters with 80A continuous current capability (exceeding the 75A requirement), identical 600V voltage rating, and matching Vce(on) specification of 2.5V @ 15V, 40A. The device is currently in active product status, ensuring long-term availability and supply chain continuity. It is ROHS3 compliant and carries AEC-Q101 automotive qualification, providing additional reliability assurance. The extended operating temperature range (-55°C to 175°C) provides superior thermal performance compared to the original part. Gate charge is higher at 180nC, and switching delays are slightly increased, but these parameters remain within acceptable ranges for most applications requiring the original IXGH60N60C3.

NGTB40N60L2WG (onsemi)

This substitute provides an alternative option with 80A continuous current capability and 600V voltage rating. The Vce(on) specification is marginally higher at 2.61V @ 15V, 40A (compared to 2.5V for the main part), representing a 4.4% increase in on-state voltage drop. The device features a Trench Field Stop architecture with higher power dissipation capability (417W maximum). However, this part is classified as obsolete, limiting its suitability for new designs requiring long-term component availability. The significantly higher gate charge (228nC) and switching delays (98ns on, 213ns off) indicate slower switching characteristics that may impact circuit performance in high-frequency applications. This part is suitable only for replacement scenarios where existing inventory is available or for applications where switching speed is not performance-critical.

Frequently Asked Questions (FAQ)

Q: Can the FGH40N60SMD-F085 directly replace the IXGH60N60C3 in existing designs?

A: Yes. Both devices share identical 600V voltage rating, matching Vce(on) specification (2.5V @ 15V, 40A), and the same TO-247-3 package. The FGH40N60SMD-F085 provides 80A continuous current capability, which exceeds the 75A requirement of the original part. Pin configuration and mounting footprint are identical, allowing direct PCB substitution without layout modifications.

Q: What are the key differences in switching performance between these parts?

A: The IXGH60N60C3 exhibits faster switching characteristics with 21ns turn-on delay and 70ns turn-off delay. The FGH40N60SMD-F085 has slightly faster turn-on (18ns) but slower turn-off (110ns). The NGTB40N60L2WG is significantly slower with 98ns turn-on and 213ns turn-off delays. Gate charge also increases from 115nC (original) to 180nC (FGH40N60SMD-F085) and 228nC (NGTB40N60L2WG). Applications sensitive to switching frequency or EMI performance should evaluate these differences against circuit requirements.

Q: Are there thermal performance differences between the substitute parts?

A: The FGH40N60SMD-F085 and NGTB40N60L2WG both support extended operating temperature ranges up to 175°C (compared to 150°C for the IXGH60N60C3), providing improved thermal margin. Maximum power dissipation differs: IXGH60N60C3 at 380W, FGH40N60SMD-F085 at 349W, and NGTB40N60L2WG at 417W. These ratings are dependent on thermal management and application-specific conditions. Designs should verify thermal performance through thermal modeling or testing.

Q: Is the FGH40N60SMD-F085 suitable for automotive applications?

A: Yes. The FGH40N60SMD-F085 carries AEC-Q101 automotive qualification and is designated as automotive grade, making it suitable for automotive and industrial applications requiring automotive-level reliability standards. The IXGH60N60C3 and NGTB40N60L2WG do not carry automotive qualification designations.

Q: What is the impact of higher gate charge on circuit design?

A: Higher gate charge (180nC for FGH40N60SMD-F085 and 228nC for NGTB40N60L2WG compared to 115nC for the original) requires increased gate drive current or extended gate drive timing. This affects gate driver selection and may increase switching losses. Circuits with marginal gate drive capability should be re-evaluated to ensure adequate gate current is available for reliable switching.

Q: Can the NGTB40N60L2WG be used in new production designs?

A: The NGTB40N60L2WG is classified as obsolete, making it unsuitable for new production designs requiring long-term component availability and supply chain continuity. This part should be reserved for replacement or maintenance scenarios only. The FGH40N60SMD-F085, with active product status, is the recommended choice for new designs.

Q: Are all three parts RoHS compliant?

A: Yes. The IXGH60N60C3, FGH40N60SMD-F085, and NGTB40N60L2WG are all ROHS3 compliant and REACH unaffected, meeting environmental and regulatory requirements for EU and global markets.

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