IXGH60N60 Equivalent & Substitute Parts

Part Overview

The IXGH60N60 is an IGBT (Insulated Gate Bipolar Transistor) rated for 600V collector-emitter breakdown voltage with a maximum collector current of 75A and 300W power dissipation. This device features a PT (Punch-Through) IGBT type in a through-hole TO-247AD package and is classified as obsolete. Due to its obsolete product status, equivalent and substitute parts are necessary for ongoing design support, production continuity, and system maintenance applications.

Substiute Parts

IXGH60N60
IXYSIn Stock: 1224IXGH60N60 Datasheet
IXGH60N60
Current Part
IXGH72N60A3
IXYSIn Stock: 19534IXGH72N60A3 Datasheet
IXGH72N60A3
Direct
FGH40N60SMD-F085
onsemiIn Stock: 800FGH40N60SMD-F085 Datasheet
FGH40N60SMD-F085
Similar
HGTG30N60A4D
onsemiIn Stock: 12595HGTG30N60A4D Datasheet
HGTG30N60A4D
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HGTG40N60A4
onsemiIn Stock: 16193HGTG40N60A4 Datasheet
HGTG40N60A4
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NGTB40N60L2WG
onsemiIn Stock: 812NGTB40N60L2WG Datasheet
NGTB40N60L2WG
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STGW60H65FB
STMicroelectronicsIn Stock: 2595STGW60H65FB Datasheet
STGW60H65FB
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Key Parameters

Parameter Value Unit
Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 75 A
Current - Collector Pulsed (Icm) 200 A
Power - Max 300 W
Vce(on) (Max) @ Vge, Ic 1.7V @ 15V, 60A V
Gate Charge 130 nC
Switching Energy (off) 8 mJ
Td (on/off) @ 25°C 50ns/300ns ns
Operating Temperature Range -55 to 150 °C (TJ)
Package / Case TO-247-3 -
Mounting Type Through Hole -

Substitute Part Grouping Explanation

Substitution of the IXGH60N60 is determined by the following critical electrical and mechanical parameters:

Primary Compatibility Criteria:

  • Voltage rating: 600V minimum collector-emitter breakdown voltage
  • Current rating: 75A minimum collector current
  • Package type: TO-247-3 through-hole configuration
  • Mounting: Through-hole compatibility

Secondary Compatibility Factors:

  • Power dissipation capability
  • Switching characteristics (gate charge, switching times)
  • On-state voltage (Vce(on))
  • Pulsed current capability
  • Operating temperature range

Substitute parts are grouped into two categories: direct equivalents (matching all primary criteria with improved performance characteristics) and similar alternatives (meeting primary electrical requirements with acceptable parameter variations for specific applications).

Parameter Comparison

Parameter IXGH60N60 IXGH72N60A3 FGH40N60SMD-F085 HGTG30N60A4D HGTG40N60A4 NGTB40N60L2WG STGW60H65FB
Voltage - Collector Emitter Breakdown (Max) 600V 600V 600V 600V 600V 600V 650V
Current - Collector (Ic) (Max) 75A 75A 80A 75A 75A 80A 80A
Current - Collector Pulsed (Icm) 200A 400A 120A 240A 300A 160A 240A
Power - Max 300W 540W 349W 463W 625W 417W 375W
Vce(on) (Max) @ Vge, Ic 1.7V @ 15V, 60A 1.35V @ 15V, 60A 2.5V @ 15V, 40A 2.6V @ 15V, 30A 2.7V @ 15V, 40A 2.61V @ 15V, 40A 2.3V @ 15V, 60A
Gate Charge 130nC 230nC 180nC 225nC 350nC 228nC 306nC
Td (on/off) @ 25°C 50ns/300ns 31ns/320ns 18ns/110ns 25ns/150ns 25ns/145ns 98ns/213ns 51ns/160ns
Operating Temperature Range -55 to 150°C -55 to 150°C -55 to 175°C -55 to 150°C -55 to 150°C -55 to 175°C -55 to 175°C
Package / Case TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3
Product Status Obsolete Active Active Active Obsolete Obsolete Active
RoHS Status Not specified ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant

Engineering Selection Recommendations

Primary Recommendation: IXGH72N60A3

The IXGH72N60A3 is the direct equivalent substitute for the IXGH60N60. Both devices are manufactured by IXYS and share identical voltage (600V) and current (75A) ratings with matching TO-247-3 through-hole packaging. The IXGH72N60A3 is currently in active product status with ROHS3 compliance, ensuring long-term availability and regulatory alignment. This part demonstrates improved performance characteristics including lower on-state voltage (1.35V vs. 1.7V), higher power dissipation capability (540W vs. 300W), and enhanced pulsed current handling (400A vs. 200A). The IXGH72N60A3 is suitable for direct replacement in existing designs without circuit modification.

Secondary Recommendations:

FGH40N60SMD-F085 (onsemi) is an active product with AEC-Q101 automotive qualification. This Field Stop IGBT meets the 600V voltage requirement with 80A collector current and TO-247-3 packaging. It provides extended operating temperature range (-55 to 175°C) and is suitable for applications requiring automotive-grade reliability.

STGW60H65FB (STMicroelectronics) is an active product offering 650V voltage rating with 80A collector current in TO-247-3 packaging. The higher voltage rating provides additional design margin. This Trench Field Stop IGBT extends the operating temperature range to 175°C and includes ROHS3 compliance.

HGTG30N60A4D (onsemi) is an active product with 75A collector current and 600V voltage rating in TO-247-3 packaging. This device provides 463W power dissipation and extended temperature operation to 150°C with ROHS3 compliance.

Parts with obsolete status (HGTG40N60A4, NGTB40N60L2WG) are available from current inventory but lack active manufacturer support and should be considered only when new active alternatives are unavailable.

Frequently Asked Questions (FAQ)

Q: Can the IXGH72N60A3 directly replace the IXGH60N60 without circuit modifications?

A: Yes. The IXGH72N60A3 shares identical voltage (600V), current (75A), and TO-247-3 package specifications with the IXGH60N60. Both devices feature standard input type and compatible gate drive requirements. The improved performance characteristics (lower Vce(on), higher power rating) make this a direct functional replacement.

Q: What is the primary difference between the IXGH72N60A3 and FGH40N60SMD-F085?

A: The IXGH72N60A3 is manufactured by IXYS with 75A collector current rating, while the FGH40N60SMD-F085 is manufactured by onsemi with 80A collector current rating. Both operate at 600V and use TO-247-3 packaging. The FGH40N60SMD-F085 includes AEC-Q101 automotive qualification and extended temperature range to 175°C, making it suitable for automotive applications. The IXGH72N60A3 offers lower on-state voltage (1.35V vs. 2.5V at rated conditions).

Q: Why is the STGW60H65FB rated at 650V instead of 600V?

A: The STGW60H65FB features a 650V collector-emitter breakdown voltage rating, which is higher than the 600V requirement of the IXGH60N60. This higher voltage rating provides additional design margin and is fully compatible with 600V applications. The device operates within the same TO-247-3 package and maintains 80A collector current capability.

Q: Are all substitute parts available in the same TO-247-3 package?

A: Yes. All substitute parts listed are packaged in TO-247-3 through-hole configuration, ensuring mechanical and thermal compatibility with existing PCB layouts and heat sink mounting arrangements.

Q: What is the significance of ROHS3 compliance for substitute selection?

A: ROHS3 compliance indicates conformance to Restriction of Hazardous Substances regulations. The IXGH60N60 does not specify RoHS status, while all active substitute parts (IXGH72N60A3, FGH40N60SMD-F085, HGTG30N60A4D, STGW60H65FB) are ROHS3 compliant. This ensures regulatory alignment for new designs and production continuity.

Q: Can the HGTG40N60A4 or NGTB40N60L2WG be used as substitutes despite obsolete status?

A: These parts meet the electrical requirements (600V, 75-80A, TO-247-3 package) but carry obsolete product status. Current inventory availability exists, but long-term supply cannot be guaranteed. Selection should prioritize active products (IXGH72N60A3, FGH40N60SMD-F085, STGW60H65FB, HGTG30N60A4D) for new designs and production planning.

Q: How do switching characteristics affect substitute selection?

A: Switching characteristics (gate charge, turn-on/turn-off times) influence circuit performance and EMI behavior. The IXGH72N60A3 exhibits faster switching (31ns/320ns vs. 50ns/300ns) with higher gate charge (230nC vs. 130nC). The FGH40N60SMD-F085 provides the fastest switching (18ns/110ns) with moderate gate charge (180nC). Selection depends on specific application requirements for switching frequency and drive circuit capability.

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