IXGH40N60C IGBT Equivalent & Substitute Parts

Part Overview

The IXGH40N60C is an IGBT (Insulated Gate Bipolar Transistor) rated for 600V collector-emitter breakdown voltage and 75A maximum collector current, with a maximum power dissipation of 250W. This device is packaged in a TO-247-3 through-hole configuration and belongs to the HiPerFAST™ and Lightspeed™ series from IXYS.

The IXGH40N60C is classified as obsolete. Identifying equivalent and substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications utilizing this component.

Substiute Parts

IXGH40N60C

IXYSIn Stock: 5691IXGH40N60C Datasheet

Current PartRFQ

IXYH50N120C3

IXYSIn Stock: 1028IXYH50N120C3 Datasheet

DirectRFQ

FGH40N60SMD-F085

onsemiIn Stock: 800FGH40N60SMD-F085 Datasheet

SimilarRFQ

NGTB40N60L2WG

onsemiIn Stock: 812NGTB40N60L2WG Datasheet

SimilarRFQ

STGW40H65FB

STMicroelectronicsIn Stock: 2870STGW40H65FB Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the IXGH40N60C are identified based on the following critical parameters that determine functional compatibility:

Primary Substitution Criteria:

• Voltage - Collector Emitter Breakdown (Max): Equal to or greater than 600V
• Current - Collector (Ic) (Max): Equal to or greater than 75A
• Package / Case: TO-247-3 (through-hole configuration)
• Mounting Type: Through Hole
• Input Type: Standard

Secondary Compatibility Factors:

• Vce(on) characteristics at rated conditions
• Gate charge and switching timing parameters
• Operating temperature range compatibility
• IGBT Type (Standard, Field Stop, or Trench Field Stop variants acceptable)

The substitute parts listed below meet or exceed the electrical performance envelope of the IXGH40N60C while maintaining mechanical and thermal compatibility through identical or equivalent packaging.

Parameter Comparison

Engineering Selection Recommendations

IXYH50N120C3 (IXYS)

This part is suitable for applications where higher voltage capability is required or beneficial. The 1200V rating provides additional design margin over the original 600V specification. The IXYH50N120C3 is active in production status with ROHS3 compliance. The higher gate charge (142nC vs. 116nC) and extended switching times require driver circuit evaluation. The maximum operating temperature extends to 175°C, providing improved thermal margin compared to the IXGH40N60C.

FGH40N60SMD-F085 (onsemi)

This Field Stop IGBT maintains the 600V voltage rating and provides 80A current capability, exceeding the original 75A specification. The FGH40N60SMD-F085 is active in production with ROHS3 compliance and AEC-Q101 automotive qualification. The Vce(on) characteristic matches the original part at 2.5V. Faster switching times (18ns on-time vs. 25ns) are observed. The higher gate charge (180nC) requires driver circuit consideration.

NGTB40N60L2WG (onsemi)

This Trench Field Stop IGBT maintains 600V voltage and 80A current ratings. The part is classified as obsolete, limiting its suitability for new designs requiring long-term supply assurance. The significantly higher gate charge (228nC) and extended switching times (98ns/213ns) represent substantial differences from the original specification and require comprehensive circuit re-evaluation.

STGW40H65FB (STMicroelectronics)

This Trench Field Stop IGBT provides 650V voltage rating with 80A current capability. The STGW40H65FB is active in production with ROHS3 compliance. The Vce(on) is lower at 2.3V, providing improved conduction efficiency. Gate charge is elevated at 210nC. The extended operating temperature range to 175°C offers thermal design flexibility.

Frequently Asked Questions (FAQ)

Q: Can the IXGH40N60C be directly replaced with the IXYH50N120C3?

A: Direct replacement requires circuit evaluation. While both devices use TO-247-3 packaging and standard input type, the IXYH50N120C3 has higher voltage rating (1200V vs. 600V), higher gate charge (142nC vs. 116nC), and extended switching times. Driver circuits must be verified for compatibility with the increased gate charge and timing parameters.

Q: What is the primary difference between Field Stop and Trench Field Stop IGBT variants?

A: Field Stop and Trench Field Stop are IGBT technology variants that affect switching characteristics and conduction losses. The FGH40N60SMD-F085 uses Field Stop technology, while NGTB40N60L2WG and STGW40H65FB use Trench Field Stop technology. These differences are reflected in gate charge, switching times, and Vce(on) characteristics provided in the parameter comparison table.

Q: Are all substitute parts available in the same packaging?

A: Yes. All substitute parts listed are packaged in TO-247-3 through-hole configuration, maintaining mechanical compatibility with the original IXGH40N60C. Mounting footprints and thermal interface requirements remain consistent across all listed alternatives.

Q: Which substitute part has the lowest conduction loss?

A: The STGW40H65FB exhibits the lowest Vce(on) at 2.3V (compared to 2.5V for the original part and FGH40N60SMD-F085). Lower Vce(on) reduces conduction losses in high-current applications. However, this must be evaluated against the specific operating conditions and duty cycle of the target application.

Q: What is the significance of product status (Active vs. Obsolete)?

A: Active status indicates the part is in current production with established supply chains and long-term availability. Obsolete status indicates the part is no longer manufactured. For new designs or applications requiring extended production runs, selection of active parts (IXYH50N120C3, FGH40N60SMD-F085, STGW40H65FB) is recommended to ensure supply continuity.

Q: How do gate charge differences affect circuit design?

A: Gate charge (measured in nanofarads) determines the charge required to switch the IGBT on and off. Higher gate charge requires more current from the driver circuit and extends switching times. The IXGH40N60C has 116nC gate charge, while substitutes range from 142nC to 228nC. Driver circuits must supply sufficient gate current to achieve the desired switching speed without exceeding maximum gate voltage ratings.

Q: Can the IXGH40N60C be used in automotive applications?

A: The IXGH40N60C does not carry automotive qualification. The FGH40N60SMD-F085 carries AEC-Q101 automotive qualification, making it suitable for automotive applications where such certification is required.