IXGH32N60C IGBT Equivalent & Substitute Parts

Part Overview

The IXGH32N60C is an IGBT (Insulated Gate Bipolar Transistor) rated for 600V collector-emitter breakdown voltage with 60A maximum collector current and 200W power dissipation. This device is packaged in a Through Hole TO-247-3 configuration and belongs to the HiPerFAST™ and Lightspeed™ series from IXYS. The part is currently listed as obsolete, making identification of functionally equivalent alternatives necessary for ongoing design support and production continuity.

Key Parameters

Parameter	Value	Unit
Voltage - Collector Emitter Breakdown (Max)	600	V
Current - Collector (Ic) (Max)	60	A
Current - Collector Pulsed (Icm)	120	A
Power - Max	200	W
Vce(on) (Max) @ Vge, Ic	2.5V @ 15V, 32A	V
Gate Charge	110	nC
Switching Energy (off)	320	µJ
Td (on/off) @ 25°C	25ns/85ns	ns
Operating Temperature Range	-55 to 150	°C (TJ)
Mounting Type	Through Hole	-
Package / Case	TO-247-3	-
Input Type	Standard	-

Substitute Part Grouping Explanation

Substitution of the IXGH32N60C is determined by matching the following critical electrical and mechanical parameters:

Primary Matching Criteria:

Voltage - Collector Emitter Breakdown: 600V (exact match required)
Current - Collector (Ic) (Max): 60A (exact match required)
Power - Max: 200W (within application tolerance)
Mounting Type: Through Hole
Package / Case: TO-247-3
Input Type: Standard

Secondary Compatibility Factors:

Operating Temperature Range: -55°C to 150°C minimum
Vce(on) characteristics at rated conditions
Gate Charge and switching energy parameters

Substitute parts are classified into two categories:

Direct Substitutes: Parts meeting all primary matching criteria with identical voltage, current, and power ratings, enabling pin-compatible replacement without circuit modification.

Similar Substitutes: Parts meeting primary electrical criteria but with variations in secondary parameters such as switching energy, gate charge, or temperature range. These require application-level verification but maintain functional equivalence within the 600V/60A/200W envelope.

Parameter Comparison

Parameter	IXGH32N60C	STGW20NC60V	STGW20NC60VD	STGW30NC60KD	STGW30NC60WD	AOK30B60D1	FGH30N60LSDTU	IGW30N60TFKSA1	IKW30N60H3FKSA1	IKW30N60TFKSA1
Voltage - Collector Emitter Breakdown (Max)	600V	600V	600V	600V	600V	600V	600V	600V	600V	600V
Current - Collector (Ic) (Max)	60A	60A	60A	60A	60A	60A	60A	60A	60A	60A
Current - Collector Pulsed (Icm)	120A	100A	150A	125A	150A	96A	90A	90A	120A	90A
Power - Max	200W	200W	200W	200W	200W	208W	480W	187W	187W	187W
Vce(on) (Max) @ Vge, Ic	2.5V @ 15V, 32A	2.5V @ 15V, 20A	2.5V @ 15V, 20A	2.7V @ 15V, 20A	2.5V @ 15V, 20A	2.4V @ 15V, 26A	1.4V @ 15V, 30A	2.05V @ 15V, 30A	2.4V @ 15V, 30A	2.05V @ 15V, 30A
Gate Charge	110nC	100nC	100nC	96nC	102nC	34nC	225nC	167nC	165nC	167nC
Switching Energy (off)	320µJ	330µJ	330µJ	435µJ	181µJ	240µJ	21mJ	1.46mJ	1.38mJ	1.46mJ
Td (on/off) @ 25°C	25ns/85ns	31ns/100ns	31ns/100ns	29ns/120ns	29.5ns/118ns	20ns/58ns	18ns/250ns	23ns/254ns	21ns/207ns	23ns/254ns
Operating Temperature Range	-55 to 150°C	-55 to 150°C	-55 to 150°C	-55 to 150°C	-55 to 150°C	-55 to 150°C	-55 to 150°C	-40 to 175°C	-40 to 175°C	-40 to 175°C
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole
Package / Case	TO-247-3	TO-247-3	TO-247-3	TO-247-3	TO-247-3	TO-247-3	TO-247-3	TO-247-3	TO-247-3	TO-247-3
Product Status	Obsolete	Active	Active	Active	Active	Active	Active	Active	Active	Active
RoHS Status	Not Specified	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

Direct Substitutes (Pin-Compatible Replacement):

The following parts are recommended as direct substitutes for the IXGH32N60C based on matching voltage, current, and power specifications:

STGW20NC60V (STMicroelectronics): Active product status, ROHS3 compliant, 600V/60A/200W rating. Identical electrical envelope with marginally lower pulsed current (100A vs 120A).
STGW20NC60VD (STMicroelectronics): Active product status, ROHS3 compliant, 600V/60A/200W rating. Enhanced pulsed current capability (150A) with improved switching energy characteristics.
STGW30NC60KD (STMicroelectronics): Active product status, ROHS3 compliant, 600V/60A/200W rating. Pulsed current of 125A with gate charge of 96nC.
STGW30NC60WD (STMicroelectronics): Active product status, ROHS3 compliant, 600V/60A/200W rating. Pulsed current of 150A with optimized switching energy profile (181µJ off-state).

Similar Substitutes (Application-Level Verification Required):

The following parts meet the primary 600V/60A electrical criteria but operate within different secondary parameter ranges:

AOK30B60D1 (Alpha & Omega Semiconductor Inc.): Active product status, ROHS3 compliant. Rated 600V/60A/208W with lower gate charge (34nC) and faster switching times (20ns/58ns). Pulsed current reduced to 96A.
FGH30N60LSDTU (onsemi): Active product status, ROHS3 compliant. Rated 600V/60A with 480W power capability. Significantly lower Vce(on) (1.4V) but higher gate charge (225nC) and extended off-state switching energy (21mJ).
IGW30N60TFKSA1 (Infineon Technologies): Active product status, ROHS3 compliant, Trench Field Stop technology. Rated 600V/60A/187W with extended operating temperature range (-40 to 175°C). Gate charge of 167nC.
IKW30N60H3FKSA1 (Infineon Technologies): Active product status, ROHS3 compliant, Trench Field Stop technology. Rated 600V/60A/187W with pulsed current of 120A (matching IXGH32N60C). Extended operating temperature range (-40 to 175°C).
IKW30N60TFKSA1 (Infineon Technologies): Active product status, ROHS3 compliant, Trench Field Stop technology. Rated 600V/60A/187W with extended operating temperature range (-40 to 175°C). Highest inventory availability (30,400 pcs).

Compliance Status:

All recommended substitute parts are ROHS3 compliant and REACH unaffected, meeting current environmental and regulatory requirements. The IXGH32N60C does not specify RoHS compliance status due to its obsolete classification.

Frequently Asked Questions (FAQ)

Q: Can STGW20NC60VD directly replace IXGH32N60C in existing designs?

A: Yes. STGW20NC60VD matches the IXGH32N60C in voltage (600V), current (60A), and power (200W) ratings with identical TO-247-3 packaging. The part is pin-compatible and active in production with ROHS3 compliance.

Q: What is the difference between direct and similar substitutes?

A: Direct substitutes maintain identical voltage, current, and power specifications within the same TO-247-3 package, enabling drop-in replacement. Similar substitutes meet the 600V/60A electrical envelope but may have different power ratings, switching characteristics, or temperature ranges, requiring application-level verification before implementation.

Q: Why do some substitutes have higher power ratings (e.g., FGH30N60LSDTU at 480W)?

A: Power rating reflects the device's thermal dissipation capability under specified test conditions. Higher power ratings indicate improved thermal performance but do not change the voltage or current specifications. The 600V/60A electrical envelope remains constant across all substitutes.

Q: Are Infineon TrenchStop® devices (IGW30N60TFKSA1, IKW30N60H3FKSA1, IKW30N60TFKSA1) compatible with standard IGBT designs?

A: Yes. TrenchStop® technology is a Trench Field Stop IGBT architecture that maintains standard gate drive requirements and TO-247-3 pin compatibility. These devices are functionally equivalent for 600V/60A applications with the added benefit of extended operating temperature range (-40 to 175°C vs -55 to 150°C).

Q: Which substitute offers the best inventory availability?

A: IKW30N60TFKSA1 (Infineon Technologies) has the highest inventory availability at 30,400 pieces in stock, followed by STGW20NC60VD (STMicroelectronics) at 27,348 pieces.

Q: What is the significance of gate charge differences between substitutes?

A: Gate charge (measured in nanofarads) affects gate drive circuit design and switching speed. Lower gate charge (e.g., AOK30B60D1 at 34nC) requires less gate current and enables faster switching. Higher gate charge (e.g., FGH30N60LSDTU at 225nC) requires more robust gate drive but may provide improved noise immunity. Selection depends on gate drive circuit capability.

Q: Can I use IXYH40N120C3 as a substitute?

A: No. IXYH40N120C3 operates at 1200V, which exceeds the IXGH32N60C's 600V rating. This part is not electrically compatible and would require complete circuit redesign. It is listed in the original part data as a reference only.

Q: What is the impact of switching energy differences on circuit performance?

A: Switching energy (measured in microjoules or millijoules) affects power dissipation and thermal management. Lower switching energy (e.g., STGW30NC60WD at 181µJ off-state) reduces heat generation and improves efficiency. Higher switching energy (e.g., FGH30N60LSDTU at 21mJ off-state) increases thermal load and may require enhanced cooling. Selection depends on thermal budget and efficiency requirements.

Q: Are all substitute parts ROHS3 compliant?

A: Yes. All active substitute parts listed are ROHS3 compliant. The original IXGH32N60C does not specify RoHS compliance due to its obsolete status.

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