IXGA20N60B IGBT Equivalent & Substitute Parts

Part Overview

The IXGA20N60B is a 600V, 40A IGBT manufactured by IXYS in the HiPerFAST™ series, housed in a TO-263AA surface mount package. This device is classified as obsolete, necessitating identification of active equivalent and substitute components for new designs and production continuity. The part delivers 150W maximum power dissipation with switching energy specifications of 150µJ (on) and 700µJ (off). Substitute parts must maintain electrical compatibility across voltage, current, and thermal operating ranges while accommodating the TO-263-3 (D2PAK) package family.

Substiute Parts

IXGA20N60B

IXYSIn Stock: 1558IXGA20N60B Datasheet

Current PartRFQ

IXGA20N120B3

IXYSIn Stock: 1813IXGA20N120B3 Datasheet

DirectRFQ

IGB20N60H3ATMA1

Infineon TechnologiesIn Stock: 2004IGB20N60H3ATMA1 Datasheet

SimilarRFQ

IKB20N60H3ATMA1

Infineon TechnologiesIn Stock: 3243IKB20N60H3ATMA1 Datasheet

SimilarRFQ

IKB20N60TATMA1

Infineon TechnologiesIn Stock: 3465IKB20N60TATMA1 Datasheet

SimilarRFQ

STGB19NC60HDT4

STMicroelectronicsIn Stock: 5317STGB19NC60HDT4 Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution eligibility for the IXGA20N60B is determined by the following critical parameters:

Voltage Rating: All substitute parts must maintain a maximum collector-emitter breakdown voltage of 600V to ensure safe operation within the original circuit design envelope.

Current Rating: Substitute parts must support a continuous collector current (Ic) of 40A minimum and pulsed current (Icm) of 60A or greater to handle transient load conditions.

Package Compatibility: All substitute parts must use the TO-263-3 (D2PAK with 2 leads + tab) surface mount package to ensure mechanical and thermal interface compatibility.

Vce(on) Saturation Voltage: Substitute parts with Vce(on) values between 2.0V and 2.5V @ 15V gate voltage and 20A collector current are electrically compatible, as this range maintains conduction losses within acceptable design margins.

Operating Temperature: Substitute parts must support a minimum junction temperature range of -40°C to 150°C, with -55°C to 175°C preferred for extended thermal margin.

Input Type: All substitute parts must feature standard gate drive input characteristics to maintain compatibility with existing gate drive circuitry.

The IXGA20N120B3 is excluded from direct substitution due to its 1200V voltage rating, which exceeds the original circuit design specification and introduces unnecessary cost and thermal complexity.

Parameter Comparison

Engineering Selection Recommendations

Primary Substitute: IKB20N60TATMA1 (Infineon Technologies)

The IKB20N60TATMA1 is the preferred substitute for the obsolete IXGA20N60B. This part maintains identical voltage (600V) and current (40A) ratings with Vce(on) of 2.05V, representing the closest saturation voltage match to the original specification. The device is active in production with ROHS3 compliance and REACH unaffected status, ensuring long-term supply availability. The TrenchStop® technology provides optimized switching characteristics for modern power conversion applications. Operating temperature range extends to 175°C, offering superior thermal margin compared to the original part.

Secondary Substitute: IKB20N60H3ATMA1 (Infineon Technologies)

The IKB20N60H3ATMA1 provides equivalent electrical performance with identical voltage and current ratings. Vce(on) of 2.4V represents a minor increase in conduction loss compared to the primary substitute but remains within acceptable design margins. This part is active with ROHS3 compliance and extended temperature range to 175°C. Higher pulsed current rating (80A) matches the original specification exactly.

Tertiary Substitute: IGB20N60H3ATMA1 (Infineon Technologies)

The IGB20N60H3ATMA1 offers equivalent performance characteristics to the IKB20N60H3ATMA1 with identical electrical specifications. This part is active in production with ROHS3 compliance and extended operating temperature range. Selection between this part and the IKB20N60H3ATMA1 depends on packaging availability and supply chain considerations.

Alternative Substitute: STGB19NC60HDT4 (STMicroelectronics)

The STGB19NC60HDT4 maintains 600V voltage and 40A current ratings with PowerMESH™ technology. Vce(on) of 2.5V represents the highest saturation voltage among available substitutes, resulting in increased conduction losses. Maximum power rating of 130W is below the original 150W specification. This part is active with ROHS3 compliance and operating temperature range matching the original (-55°C to 150°C). Selection of this part is appropriate when thermal design margins are adequate and lower gate charge (53nC) provides switching speed advantages.

All substitute parts are active in production status, ensuring supply continuity and compliance with current environmental regulations.

Frequently Asked Questions (FAQ)

Q: Can the IXGA20N120B3 substitute for the IXGA20N60B?

A: No. The IXGA20N120B3 operates at 1200V maximum voltage, which exceeds the original circuit design specification of 600V. This higher voltage rating introduces unnecessary cost, increased thermal dissipation, and potential circuit compatibility issues. This part is listed as a reference only and is not suitable for direct substitution.

Q: What is the primary difference between IKB20N60TATMA1 and IKB20N60H3ATMA1?

A: Both parts maintain identical 600V voltage and 40A current ratings. The IKB20N60TATMA1 features lower Vce(on) of 2.05V compared to 2.4V for the IKB20N60H3ATMA1, resulting in reduced conduction losses. The IKB20N60TATMA1 is the preferred selection when minimizing power dissipation is a design priority. Pulsed current rating differs: IKB20N60TATMA1 supports 60A while IKB20N60H3ATMA1 supports 80A.

Q: Are all substitute parts compatible with the original TO-263AA package footprint?

A: Yes. All substitute parts use the TO-263-3 (D2PAK with 2 leads + tab) surface mount package family. Mechanical and thermal interface compatibility is maintained across all listed substitutes. Printed circuit board layouts require no modification for component substitution.

Q: What is the impact of higher gate charge in Infineon substitutes?

A: Infineon TrenchStop® parts feature gate charge of 120nC compared to 90nC in the original IXGA20N60B. Higher gate charge requires increased gate drive current to achieve specified switching times. Existing gate drive circuits must provide sufficient current capacity. Switching energy specifications differ between parts; refer to detailed datasheets for precise switching loss calculations in your specific application.

Q: Which substitute offers the best thermal performance?

A: IKB20N60TATMA1 and IKB20N60H3ATMA1 both extend operating temperature range to 175°C compared to 150°C maximum junction temperature of the original part. This provides 25°C additional thermal margin. Maximum power dissipation ratings are 166W and 170W respectively, both exceeding the original 150W specification. STGB19NC60HDT4 maintains the original 150°C maximum temperature but offers lower gate charge for faster switching.

Q: Are all substitutes RoHS and REACH compliant?

A: All active substitute parts are ROHS3 compliant and REACH unaffected. The original IXGA20N60B RoHS status is not specified in available documentation. All substitutes meet current environmental and regulatory requirements for new designs and production applications.

Q: What is the minimum pulsed current requirement for circuit compatibility?

A: The original IXGA20N60B supports 80A pulsed current. IKB20N60TATMA1 and STGB19NC60HDT4 support 60A pulsed current, representing a 25% reduction. Circuits designed for 80A pulsed operation require either IKB20N60H3ATMA1 or IGB20N60H3ATMA1 to maintain identical transient current handling capability.

Q: Can STGB19NC60HDT4 replace the IXGA20N60B in all applications?

A: STGB19NC60HDT4 maintains voltage and continuous current ratings but features reduced maximum power dissipation (130W versus 150W) and higher Vce(on) (2.5V). This part is suitable for applications where thermal design margins are adequate and conduction loss increases are acceptable. Lower gate charge (53nC) provides faster switching characteristics compared to the original part.