IXFX90N20Q Equivalent & Substitute Parts

Part Overview

The IXFX90N20Q is an N-Channel MOSFET manufactured by IXYS, rated for 200V drain-to-source voltage with 90A continuous drain current at 25°C. This device is part of the HiPerFET™ Q Class series and is housed in a PLUS247™-3 package for through-hole mounting applications. The component is Active in product status and fully compliant with RoHS3 and REACH regulations.

Substitute parts are identified when equivalent electrical performance can be achieved within the specified parameter ranges for drain-to-source voltage, continuous drain current, on-state resistance, gate charge, and thermal characteristics. Substitution becomes necessary when the primary part is unavailable, when supply chain optimization is required, or when design flexibility across multiple qualified sources is needed.

Substiute Parts

IXFX90N20Q

IXYSIn Stock: 3326IXFX90N20Q Datasheet

Current PartRFQ

IRFP90N20DPBF

Infineon TechnologiesIn Stock: 16100IRFP90N20DPBF Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the IXFX90N20Q are qualified based on the following electrical and mechanical parameters:

Electrical Equivalence Criteria:

• Drain-to-Source Voltage (Vdss): Must equal or exceed 200V
• Continuous Drain Current (Id): Must equal or exceed 90A at 25°C
• On-State Resistance (Rds On): Must not significantly exceed the specified maximum to maintain thermal performance
• Gate Charge (Qg): Lower values indicate improved switching performance
• Power Dissipation: Must support thermal requirements of the application

Mechanical Compatibility Criteria:

• Mounting Type: Through Hole
• Package / Case: TO-247-3 or compatible variant
• Pin configuration: Compatible with PLUS247™-3 footprint

The IRFP90N20DPBF meets these criteria with equivalent voltage rating, higher continuous drain current (94A), comparable on-state resistance, and compatible through-hole TO-247AC packaging. Both devices operate within overlapping temperature ranges and maintain RoHS3 compliance.

Parameter Comparison

Engineering Selection Recommendations

IXFX90N20Q (Primary Part)

The IXFX90N20Q remains the primary selection when IXYS HiPerFET™ Q Class devices are specified or when the lower gate charge (190 nC) is advantageous for switching speed optimization. This device is Active in product status with full RoHS3 and REACH compliance. Current inventory of 3260 pieces supports immediate availability.

IRFP90N20DPBF (Substitute Part)

The IRFP90N20DPBF qualifies as a direct substitute when Infineon HEXFET® technology is acceptable or when higher continuous drain current (94A) and power dissipation (580W) provide design margin. This device is Active in product status with equivalent RoHS3 and REACH compliance. Extended operating temperature range (-55°C to 175°C) supports applications requiring higher thermal headroom. Inventory of 16040 pieces ensures supply availability. Both devices are rated for 200V operation and through-hole mounting in TO-247-3 compatible packages.

Selection between these parts depends on manufacturer preference, supply chain strategy, and application-specific thermal or switching requirements. Both devices meet the core electrical and mechanical specifications for N-Channel 200V 90A+ MOSFET applications.

Frequently Asked Questions (FAQ)

Q: Can the IRFP90N20DPBF directly replace the IXFX90N20Q in existing designs?

A: Yes. Both devices are N-Channel MOSFETs rated for 200V operation with continuous drain current exceeding 90A. The TO-247-3 package compatibility and through-hole mounting type are identical. Pin configuration is compatible. Electrical parameters fall within acceptable substitution ranges for the specified application class.

Q: What is the difference in gate charge between these parts?

A: The IXFX90N20Q specifies 190 nC maximum gate charge at 10V, while the IRFP90N20DPBF specifies 270 nC maximum at 10V. Lower gate charge reduces switching losses and improves switching speed. Applications sensitive to gate drive power or switching frequency may benefit from the IXFX90N20Q specification.

Q: Are there thermal performance differences?

A: The IRFP90N20DPBF supports higher maximum power dissipation (580W versus 500W) and extended operating temperature range (-55°C to 175°C versus -55°C to 150°C). These characteristics provide additional thermal margin in high-power applications. On-state resistance values are comparable (22 mOhm versus 23 mOhm at specified conditions).

Q: Do both parts meet regulatory requirements?

A: Yes. Both the IXFX90N20Q and IRFP90N20DPBF are RoHS3 Compliant and REACH Unaffected. Both carry EAR99 ECCN classification and identical HTSUS codes (8541.29.0095).

Q: What packaging differences exist?

A: The IXFX90N20Q is supplied in PLUS247™-3 package format, while the IRFP90N20DPBF is supplied in TO-247AC package format. Both are through-hole mounted TO-247-3 variants with compatible pin configurations and footprints.

Q: Which part should be selected for new designs?

A: Selection depends on design priorities. Choose the IXFX90N20Q for lower gate charge and IXYS ecosystem integration. Choose the IRFP90N20DPBF for higher power dissipation capability, extended temperature range, and Infineon supply chain access. Both are Active products with established availability.