IXFX88N20Q N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The IXFX88N20Q is an N-Channel MOSFET manufactured by IXYS, rated for 200V drain-to-source voltage with 88A continuous drain current at 25°C. This device is packaged in the PLUS247™-3 form factor and belongs to the HiPerFET™ Q Class series. The part is currently classified as obsolete, making identification of functionally equivalent substitute components necessary for ongoing design support, maintenance, and production continuity. Substitute parts must maintain electrical compatibility across voltage, current, and thermal specifications while accommodating available packaging options.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	200	V
Continuous Drain Current (Id) @ 25°C	88	A
On-State Resistance (Rds On Max) @ 44A, 10V	30	mOhm
Gate Threshold Voltage (Vgs(th) Max) @ 4mA	4	V
Gate Charge (Qg Max) @ 10V	146	nC
Power Dissipation (Max)	500	W
Operating Temperature Range	-55 to 150	°C
Package Type	TO-247-3	—
Mounting Type	Through Hole	—

Substitute Part Grouping Explanation

Substitute parts for the IXFX88N20Q are selected based on the following critical electrical and mechanical parameters:

Primary Matching Criteria:

Drain-to-Source Voltage (Vdss): 200V (exact match required)
FET Type: N-Channel (exact match required)
Technology: MOSFET Metal Oxide (exact match required)
Mounting Type: Through Hole (exact match required)
Package Family: TO-247 variant (mechanical compatibility)

Secondary Compatibility Parameters:

Continuous Drain Current (Id): Minimum 75A (maintains or exceeds primary current rating)
On-State Resistance (Rds On): ≤34 mOhm (ensures thermal performance within acceptable range)
Gate Charge (Qg): ≤146 nC (ensures gate drive compatibility)
Operating Temperature Range: Minimum -40°C to 150°C (covers primary operating window)
RoHS3 Compliance and REACH Unaffected status (regulatory alignment)

The identified substitute parts meet these criteria while accommodating variations in power dissipation ratings and specific gate threshold characteristics.

Parameter Comparison

Parameter	IXFX88N20Q	IRFP4227PBF	STW75NF20	Unit
Manufacturer	IXYS	Infineon Technologies	STMicroelectronics	—
Product Status	Obsolete	Active	Active	—
Drain-to-Source Voltage (Vdss)	200	200	200	V
Continuous Drain Current (Id) @ 25°C	88	65	75	A
On-State Resistance (Rds On Max)	30 @ 44A, 10V	25 @ 46A, 10V	34 @ 37A, 10V	mOhm
Gate Threshold Voltage (Vgs(th) Max)	4 @ 4mA	5 @ 250µA	4 @ 250µA	V
Gate Charge (Qg Max) @ 10V	146	98	84	nC
Input Capacitance (Ciss Max) @ 25V	4150	4600	3260	pF
Power Dissipation (Max)	500	330	190	W
Operating Temperature Range	-55 to 150	-40 to 175	-50 to 150	°C
Package Type	PLUS247-3	TO-247AC	TO-247-3	—
RoHS3 Compliance	Yes	Yes	Yes	—
REACH Status	Unaffected	Unaffected	Unaffected	—

Engineering Selection Recommendations

IRFP4227PBF (Infineon Technologies)

The IRFP4227PBF is an active-status substitute with identical 200V Vdss rating and TO-247AC packaging. This device delivers 65A continuous drain current, representing a 26% reduction from the IXFX88N20Q specification. The on-state resistance of 25 mOhm at 46A, 10V provides superior switching efficiency compared to the primary part. Gate charge is reduced to 98 nC, enabling faster switching transitions. Power dissipation is rated at 330W, which is 34% lower than the primary part. This substitute is suitable for applications where the 65A current rating is sufficient and thermal management can accommodate the reduced power dissipation envelope. RoHS3 compliance and REACH unaffected status align with regulatory requirements.

STW75NF20 (STMicroelectronics)

The STW75NF20 is an active-status substitute with identical 200V Vdss rating and TO-247-3 packaging, providing direct mechanical compatibility with the IXFX88N20Q. This device delivers 75A continuous drain current, representing a 15% reduction from the primary part specification. The on-state resistance of 34 mOhm at 37A, 10V is within acceptable tolerance. Gate charge is reduced to 84 nC, supporting efficient gate drive circuits. Power dissipation is rated at 190W, which is 62% lower than the primary part. This substitute is suitable for applications where the 75A current rating is adequate and thermal constraints are less demanding. Operating temperature range extends to -50°C, providing enhanced low-temperature performance. RoHS3 compliance and REACH unaffected status align with regulatory requirements.

Both substitutes maintain the critical 200V voltage rating and N-Channel MOSFET topology. Selection between these options depends on application current requirements, thermal budget, and gate drive circuit design parameters.

Frequently Asked Questions (FAQ)

Q: Can the IRFP4227PBF replace the IXFX88N20Q in all applications?

A: The IRFP4227PBF maintains the 200V Vdss rating and N-Channel MOSFET configuration. However, the 65A continuous drain current rating is 26% lower than the IXFX88N20Q. Substitution is valid only when application current requirements do not exceed 65A at 25°C. The TO-247AC package is mechanically compatible with TO-247-3 footprints in most PCB designs.

Q: What are the thermal implications of using the STW75NF20 as a substitute?

A: The STW75NF20 has a maximum power dissipation rating of 190W, compared to 500W for the IXFX88N20Q. This 62% reduction in power dissipation capacity requires thermal analysis to confirm that junction temperature remains within the -50°C to 150°C operating range under worst-case application conditions. Thermal management design may require modification.

Q: Are the substitute parts pin-compatible with the IXFX88N20Q?

A: Both substitute parts use TO-247 package variants with three leads (Gate, Drain, Source). Pin assignments follow industry-standard TO-247 conventions. Physical lead spacing and positioning are compatible with IXFX88N20Q PCB layouts. Mechanical mounting and thermal interface requirements are equivalent.

Q: Do the substitute parts have the same gate drive requirements?

A: Gate charge specifications differ: IXFX88N20Q (146 nC), IRFP4227PBF (98 nC), and STW75NF20 (84 nC). Lower gate charge in substitute parts enables faster switching with reduced gate drive power. Existing gate drive circuits designed for the IXFX88N20Q will operate the substitutes with improved performance characteristics. Gate threshold voltages are comparable (4V to 5V range), ensuring compatible logic-level gate drive compatibility.

Q: What is the impact of reduced on-state resistance in the substitute parts?

A: The IRFP4227PBF (25 mOhm) and STW75NF20 (34 mOhm) exhibit lower on-state resistance than the IXFX88N20Q (30 mOhm). Lower Rds On reduces conduction losses and heat generation during on-state operation. This characteristic improves overall circuit efficiency and reduces thermal stress on the device and surrounding components.

Q: Are there regulatory or compliance differences between the parts?

A: All three parts are RoHS3 compliant and REACH unaffected. Regulatory status is equivalent across the primary part and both substitutes. No additional compliance documentation or design modifications are required from a regulatory perspective.

Q: What is the significance of the different operating temperature ranges?

A: IXFX88N20Q operates from -55°C to 150°C, IRFP4227PBF from -40°C to 175°C, and STW75NF20 from -50°C to 150°C. The IRFP4227PBF provides extended high-temperature operation to 175°C. The STW75NF20 matches the primary part's upper temperature limit but extends lower-temperature performance to -50°C. Selection depends on application temperature extremes.

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