IXFX73N30Q Equivalent & Substitute Parts

Part Overview

The IXFX73N30Q is an N-Channel MOSFET manufactured by IXYS, rated for 300V drain-to-source voltage with 73A continuous drain current at 25°C. This device is part of the HiPerFET™ Q Class series and is housed in a PLUS247™-3 package variant of the TO-247-3 form factor. The IXFX73N30Q is classified as obsolete, necessitating identification of functionally equivalent substitute components for ongoing design support and procurement requirements.

Substiute Parts

IXFX73N30Q
IXYSIn Stock: 814IXFX73N30Q Datasheet
IXFX73N30Q
Current Part
IRFP4229PBF
Infineon TechnologiesIn Stock: 26444IRFP4229PBF Datasheet
IRFP4229PBF
Similar

Key Parameters

Parameter Value Unit
FET Type N-Channel
Drain to Source Voltage (Vdss) 300 V
Current - Continuous Drain (Id) @ 25°C 73 A (Tc)
Rds On (Max) @ Id, Vgs 45 mOhm @ 500mA, 10V
Power Dissipation (Max) 500 W (Tc)
Gate Charge (Qg) (Max) @ Vgs 195 nC @ 10V
Operating Temperature Range -55 to 150 °C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3
RoHS Status ROHS3 Compliant

Substitute Part Grouping Explanation

Substitution of the IXFX73N30Q is determined by the following critical electrical and mechanical parameters:

Electrical Compatibility Criteria:

  • FET Type: N-Channel topology must be maintained
  • Drain to Source Voltage (Vdss): Substitute must equal or exceed 300V rating
  • Continuous Drain Current (Id): Substitute must equal or exceed 73A at 25°C
  • On-State Resistance (Rds On): Substitute must not exceed 45mOhm at specified gate voltage
  • Power Dissipation: Substitute must support minimum 500W thermal rating
  • Gate Charge (Qg): Lower values indicate faster switching performance
  • Operating Temperature Range: Substitute must cover the -55°C to 150°C specification

Mechanical Compatibility Criteria:

  • Mounting Type: Through Hole configuration required
  • Package Form Factor: TO-247-3 or compatible variant

The IRFP4229PBF is evaluated against these parameters to determine substitution feasibility.

Parameter Comparison

Parameter IXFX73N30Q IRFP4229PBF Unit
Manufacturer IXYS Infineon Technologies
FET Type N-Channel N-Channel
Drain to Source Voltage (Vdss) 300 250 V
Current - Continuous Drain (Id) @ 25°C 73 44 A (Tc)
Rds On (Max) @ Id, Vgs 45 @ 500mA, 10V 46 @ 26A, 10V mOhm
Gate Charge (Qg) (Max) @ Vgs 195 @ 10V 110 @ 10V nC
Power Dissipation (Max) 500 310 W (Tc)
Operating Temperature Range -55 to 150 -40 to 175 °C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-247-3 TO-247-3
Product Status Obsolete Active
RoHS Status ROHS3 Compliant ROHS3 Compliant

Engineering Selection Recommendations

IRFP4229PBF Substitution Assessment:

The IRFP4229PBF does not meet the electrical requirements for direct substitution of the IXFX73N30Q. The IRFP4229PBF is rated for 250V Vdss, which is below the 300V specification of the IXFX73N30Q. Additionally, the continuous drain current rating of 44A is significantly lower than the 73A requirement. The power dissipation capability of 310W is also below the 500W specification.

Product Status Consideration:

The IXFX73N30Q is classified as obsolete. The IRFP4229PBF is an active product from Infineon Technologies, offering current manufacturing availability and supply chain continuity. Both devices are ROHS3 compliant and carry equivalent regulatory compliance status.

Recommendation:

For applications requiring the full electrical specifications of the IXFX73N30Q (300V, 73A, 500W), alternative N-Channel MOSFETs with matching or superior ratings must be evaluated. The IRFP4229PBF is suitable only for applications with reduced voltage, current, or power dissipation requirements that fall within its electrical envelope.

Frequently Asked Questions (FAQ)

Q: Can the IRFP4229PBF directly replace the IXFX73N30Q in existing designs?

A: No. The IRFP4229PBF has lower electrical ratings across multiple critical parameters. The 250V Vdss rating is insufficient for circuits designed for 300V operation. The 44A continuous current and 310W power dissipation are below the IXFX73N30Q specifications of 73A and 500W respectively.

Q: Are the packages physically compatible?

A: Both devices use the TO-247-3 form factor with through-hole mounting, making them physically interchangeable from a mechanical standpoint. However, electrical incompatibility prevents functional substitution.

Q: What is the significance of the gate charge difference between these devices?

A: The IRFP4229PBF has a gate charge of 110 nC compared to 195 nC for the IXFX73N30Q. Lower gate charge indicates faster switching transitions and reduced gate drive power requirements. This is a performance advantage of the IRFP4229PBF but does not address the voltage and current rating deficiencies.

Q: Why is the IXFX73N30Q obsolete?

A: The IXFX73N30Q is listed as obsolete by IXYS. Obsolescence typically results from product line consolidation, technology advancement, or market transition. Current inventory of 781 pieces may be available through authorized distributors, but long-term procurement should transition to active alternatives.

Q: What compliance certifications apply to both devices?

A: Both the IXFX73N30Q and IRFP4229PBF are ROHS3 compliant, REACH unaffected, and classified under ECCN EAR99 with HTSUS code 8541.29.0095. Both carry Moisture Sensitivity Level 1 (Unlimited).

Q: Should I consider the IRFP4229PBF for a lower-power variant of my application?

A: The IRFP4229PBF may be suitable for applications with reduced electrical requirements. However, such applications should be independently evaluated to confirm that 250V Vdss, 44A Id, and 310W power dissipation are adequate for the intended circuit operation.

Request Quote (Ships tomorrow)