IXFX66N50Q2 Equivalent & Substitute Parts

Part Overview

The IXFX66N50Q2 is an N-Channel MOSFET rated for 500V drain-to-source voltage with 66A continuous drain current at 25°C. Manufactured by IXYS as part of the HiPerFET™ series, this device is packaged in a TO-247-3 variant (PLUS247™-3) and rated for 735W maximum power dissipation. The part is classified as obsolete, making identification of equivalent and substitute components necessary for ongoing design support and procurement continuity.

Substiute Parts

IXFX66N50Q2

IXYSIn Stock: 2244IXFX66N50Q2 Datasheet

Current PartRFQ

IXFX80N50Q3

IXYSIn Stock: 2255IXFX80N50Q3 Datasheet

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APT75F50B2

Microchip TechnologyIn Stock: 1607APT75F50B2 Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution of the IXFX66N50Q2 is determined by the following critical parameters:

Voltage Rating: All substitute parts must maintain the 500V Vdss specification to ensure compatibility in high-voltage applications.

Current Rating: Substitute parts must support continuous drain current at or above 66A at 25°C. Parts with higher current ratings (80A, 75A) provide enhanced thermal margin and are acceptable substitutes.

Package Type: All substitute parts must use the TO-247-3 variant (through-hole mounting) to ensure mechanical and thermal interface compatibility.

Operating Temperature Range: All substitute parts must support the -55°C to 150°C operating range.

Gate Drive Voltage: All substitute parts operate at 10V gate drive voltage, ensuring compatibility with existing gate drive circuits.

The two identified substitute parts meet these criteria while offering improved performance characteristics in power dissipation and on-state resistance.

Parameter Comparison

Engineering Selection Recommendations

IXFX80N50Q3 (IXYS): This part is the primary substitute for the IXFX66N50Q2. It maintains identical voltage and package specifications while providing 80A continuous drain current versus the original 66A. Power dissipation capability increases to 1250W, and on-state resistance improves to 65mOhm at 40A. The IXFX80N50Q3 is classified as active product status with ROHS3 compliance, ensuring long-term availability and regulatory alignment. Gate charge remains at 200nC, matching the original part's gate drive requirements.

APT75F50B2 (Microchip Technology): This part provides an alternative from a different manufacturer within the same voltage and package class. It delivers 75A continuous drain current with 1040W power dissipation and 75mOhm on-state resistance at 37A. The APT75F50B2 is active product status with ROHS3 compliance. Gate charge is specified at 290nC, which is higher than the original part, requiring verification of gate drive circuit capability. Input capacitance is also elevated at 11600pF compared to the original 9125pF.

Both substitute parts are suitable for direct replacement in applications where the original IXFX66N50Q2 is no longer available. Selection between them depends on specific application requirements regarding gate drive characteristics and thermal management capacity.

Frequently Asked Questions (FAQ)

Q: Can the IXFX80N50Q3 be used as a direct replacement for the IXFX66N50Q2?

A: Yes. Both parts share identical 500V Vdss rating, TO-247-3 package, and -55°C to 150°C operating temperature range. The IXFX80N50Q3 provides higher current capability (80A versus 66A) and improved power dissipation (1250W versus 735W), making it a suitable upgrade. Gate charge specifications are identical at 200nC, ensuring compatibility with existing gate drive circuits.

Q: What are the key differences between the IXFX80N50Q3 and APT75F50B2?

A: Both parts meet the 500V voltage and TO-247-3 package requirements. The IXFX80N50Q3 offers 80A current rating with 200nC gate charge, while the APT75F50B2 provides 75A current rating with 290nC gate charge. The APT75F50B2 has higher input capacitance (11600pF versus 10000pF), which may affect gate drive circuit performance. The IXFX80N50Q3 provides lower on-state resistance (65mOhm versus 75mOhm).

Q: Is the package compatibility guaranteed between these parts?

A: All three parts use the TO-247-3 variant package with through-hole mounting. Mechanical and thermal interface compatibility is ensured. PCB layout and heatsink mounting remain unchanged.

Q: Are there compliance or regulatory differences between the substitute parts?

A: The IXFX66N50Q2 (obsolete) does not specify RoHS status. Both substitute parts are ROHS3 compliant and REACH unaffected, meeting current regulatory requirements. Both carry EAR99 ECCN classification and identical HTSUS codes.

Q: How do gate charge differences affect circuit design?

A: The IXFX66N50Q2 and IXFX80N50Q3 both specify 200nC gate charge at 10V, ensuring identical gate drive requirements. The APT75F50B2 specifies 290nC gate charge, requiring higher gate drive current or longer switching times. Existing gate drive circuits designed for the original part will operate with the IXFX80N50Q3 without modification but may require evaluation for the APT75F50B2.

Q: What is the significance of the higher input capacitance in the APT75F50B2?

A: The APT75F50B2 input capacitance is 11600pF compared to 9125pF in the original part. Higher input capacitance increases gate charge requirements and may affect switching speed and efficiency. Gate drive circuit current capability should be verified for the APT75F50B2 to ensure adequate performance.

Q: Can these parts be used interchangeably in existing designs?

A: The IXFX80N50Q3 is a direct substitute with no circuit modifications required. The APT75F50B2 requires evaluation of gate drive circuit capability due to higher gate charge and input capacitance specifications. Both parts maintain the same voltage rating, package, and operating temperature range as the original IXFX66N50Q2.