IXFX55N50 N-Channel MOSFET 500V 55A Equivalent & Substitute Parts

Part Overview

The IXFX55N50 is an N-Channel MOSFET manufactured by IXYS, rated for 500V drain-to-source voltage with 55A continuous drain current at 25°C. This device is part of the HiPerFET™ series and features a TO-247-3 through-hole package configuration. The IXFX55N50 is classified as obsolete, necessitating identification of active equivalent and substitute components for new designs and ongoing production requirements. Substitute parts must maintain electrical compatibility across voltage, current, and thermal specifications while accommodating the through-hole PLUS247™-3 package standard.

Substiute Parts

IXFX55N50

IXYSIn Stock: 1932IXFX55N50 Datasheet

Current PartRFQ

IXFX64N50P

IXYSIn Stock: 1456IXFX64N50P Datasheet

MFR RecommendedRFQ

IXFX94N50P2

IXYSIn Stock: 1625IXFX94N50P2 Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IXFX55N50 is determined by strict adherence to the following electrical and mechanical parameters:

Critical Compatibility Parameters:

• Drain-to-Source Voltage (Vdss): Must equal or exceed 500V
• Package Type: Must be TO-247-3 through-hole configuration (PLUS247™-3)
• FET Type: N-Channel MOSFET technology
• Operating Temperature Range: Must support -55°C to 150°C (TJ)

Performance Parameters Allowing Substitution:

• Continuous Drain Current (Id): Substitute parts may exceed 55A; higher current ratings provide design margin
• Power Dissipation: Substitute parts may exceed 625W; higher ratings accommodate thermal requirements
• Rds On (Max): Lower on-resistance values are acceptable and improve efficiency
• Gate Charge (Qg): Lower values reduce switching losses
• Input Capacitance (Ciss): Variations within the same package class are acceptable

The IXFX55N50 is obsolete; active substitute parts from the IXYS HiPerFET™ family maintain full electrical compatibility while offering enhanced performance characteristics.

Parameter Comparison

Engineering Selection Recommendations

IXFX64N50P (MFR Recommended Substitute)

The IXFX64N50P is designated as the manufacturer-recommended substitute for the IXFX55N50. This part maintains identical voltage and package specifications while providing 16% higher continuous drain current (64A vs. 55A) and 33% increased power dissipation capability (830W vs. 625W). The IXFX64N50P is active in production status and carries RoHS3 compliance certification with MSL 1 (Unlimited) moisture sensitivity rating. Gate charge is reduced to 150 nC, improving switching efficiency. Maximum gate voltage is increased to ±30V, providing enhanced gate drive flexibility. This part is suitable for direct replacement in applications where the original IXFX55N50 was specified.

IXFX94N50P2 (Similar Alternative)

The IXFX94N50P2 represents an enhanced performance alternative within the same voltage and package class. This part delivers 71% higher continuous drain current (94A vs. 55A) and 108% increased power dissipation (1300W vs. 625W). The on-resistance is reduced to 55 mOhm, providing superior efficiency. The IXFX94N50P2 is active in production and carries RoHS3 compliance with MSL 1 (Unlimited) rating. This part incorporates PolarP2™ technology and is appropriate for applications requiring enhanced thermal performance or higher current capacity within the same voltage platform.

Product Status Consideration

Both substitute parts are active in production status, ensuring long-term availability and supply chain stability. The IXFX55N50 is obsolete and should not be specified for new designs.

Frequently Asked Questions (FAQ)

Q: Can the IXFX64N50P directly replace the IXFX55N50 in existing circuit designs?

A: Yes. The IXFX64N50P maintains identical drain-to-source voltage (500V), package configuration (TO-247-3), and operating temperature range (-55°C to 150°C). The higher current rating (64A vs. 55A) and power dissipation (830W vs. 625W) provide design margin without requiring circuit modification.

Q: What is the primary difference between the IXFX64N50P and IXFX94N50P2?

A: Both parts share the same 500V voltage rating and TO-247-3 package. The IXFX94N50P2 provides significantly higher current capacity (94A vs. 64A), lower on-resistance (55 mOhm vs. 85 mOhm), and greater power dissipation capability (1300W vs. 830W). The IXFX94N50P2 incorporates PolarP2™ technology. Selection depends on application current and thermal requirements.

Q: Are there package compatibility concerns when substituting the IXFX55N50?

A: No. Both substitute parts use the TO-247-3 through-hole package variant (PLUS247™-3), identical to the original IXFX55N50. PCB layout and mechanical mounting remain unchanged.

Q: What compliance certifications apply to the substitute parts?

A: Both IXFX64N50P and IXFX94N50P2 are RoHS3 compliant and carry MSL 1 (Unlimited) moisture sensitivity rating. Both are REACH unaffected and classified under ECCN EAR99 and HTSUS 8541.29.0095.

Q: Why is the IXFX55N50 obsolete?

A: The IXFX55N50 is classified as obsolete by the manufacturer. The IXFX64N50P and IXFX94N50P2 represent current-generation alternatives within the HiPerFET™ family, offering improved performance and production availability.

Q: Can the IXFX94N50P2 be used in applications originally designed for the IXFX55N50?

A: Yes. The IXFX94N50P2 meets all critical compatibility parameters: 500V voltage rating, TO-247-3 package, N-Channel MOSFET technology, and -55°C to 150°C operating range. The enhanced performance characteristics (higher current, lower on-resistance, greater power dissipation) provide additional design margin.

Q: What is the gate charge difference between these parts, and does it affect circuit design?

A: The IXFX55N50 has 330 nC gate charge, the IXFX64N50P has 150 nC, and the IXFX94N50P2 has 220 nC. Lower gate charge reduces switching losses and improves efficiency. Existing gate drive circuits designed for the IXFX55N50 will function with substitute parts; lower gate charge may improve overall system performance.