IXFX52N60Q2 Equivalent & Substitute Parts

Part Overview

The IXFX52N60Q2 is an N-Channel 600V 52A MOSFET manufactured by IXYS in the HiPerFET™ Q2 Class series. This device features a PLUS247™-3 package rated for 735W power dissipation and operates across a temperature range of -55°C to 150°C. The part is classified as obsolete, necessitating identification of functionally equivalent alternatives for ongoing system support and new design implementations.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	600	V
Continuous Drain Current (Id) @ 25°C	52	A
Rds On (Max) @ 500mA, 10V	115	mOhm
Gate Threshold Voltage (Vgs(th)) @ 8mA	4.5	V
Gate Charge (Qg) @ 10V	198	nC
Power Dissipation (Max)	735	W
Operating Temperature Range	-55 to 150	°C
Package Type	TO-247-3
Mounting Type	Through Hole

Substitute Part Grouping Explanation

Substitution of the IXFX52N60Q2 is determined by the following critical electrical and mechanical parameters:

Primary Matching Criteria:

Drain to Source Voltage (Vdss): 600V minimum
Continuous Drain Current (Id): 52A or greater at 25°C
Package Type: TO-247-3 or compatible through-hole variant
Gate Drive Voltage: 10V nominal
Operating Temperature Range: -55°C to 150°C minimum

Secondary Compatibility Factors:

Rds On characteristics within acceptable operating margins
Gate Charge (Qg) and threshold voltage compatibility with existing gate drive circuits
Power dissipation capability for thermal management requirements

Substitute parts are grouped into two categories: direct current-rated equivalents (52A or higher) and reduced-current alternatives (below 52A) suitable for applications with lower current demands or thermal constraints.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Qg (nC)	Power Diss. (W)	Temp Range (°C)	Package	Status
IXFX52N60Q2	IXYS	600	52	115	198	735	-55 to 150	TO-247-3	Obsolete
APT56F60B2	Microchip	600	60	110	280	1040	-55 to 150	TO-247-3	Active
STW34NM60N	STMicroelectronics	600	29	105	80	250	-55 to 150	TO-247-3	Active
SPW35N60CFDFKSA1	Infineon	600	34.1	118	212	313	-55 to 150	TO-247-3	Not For New Designs
AOK42S60L	Alpha & Omega	600	39	99	40	417	-55 to 150	TO-247-3	Obsolete
IPW60R099CPAFKSA1	Infineon	600	31	105	80	255	-40 to 150	TO-247-3	Active
IPW60R099P7XKSA1	Infineon	600	31	99	45	117	-55 to 150	TO-247-3	Active
IPW60R120P7XKSA1	Infineon	600	26	120	36	95	-55 to 150	TO-247-3	Active
SPW35N60C3FKSA1	Infineon	650	34.6	100	200	313	-55 to 150	TO-247-3	Active
STW30N65M5	STMicroelectronics	650	22	139	64	140	-55 to 150	TO-247-3	Active
SCT3080ALGC11	Rohm	650	30	104	48	134	-55 to 175	TO-247-3	Active

Engineering Selection Recommendations

Direct Equivalent (Recommended for High-Current Applications):

APT56F60B2 from Microchip Technology is the primary direct substitute. This device exceeds the IXFX52N60Q2 current rating at 60A continuous drain current while maintaining 600V Vdss rating and TO-247-3 package compatibility. The part is in active production status with full RoHS3 compliance. Power dissipation capability of 1040W provides thermal margin for demanding applications. Operating temperature range matches the original specification at -55°C to 150°C.

Alternative Equivalents (Reduced Current Rating):

For applications where the full 52A current capability is not required, the following active-status alternatives provide enhanced reliability through current production:

STW34NM60N (STMicroelectronics): 29A rating, 105mOhm Rds On, active production status, full temperature range support
IPW60R099P7XKSA1 (Infineon CoolMOS™ P7): 31A rating, 99mOhm Rds On, active production, optimized gate charge at 45nC
SPW35N60C3FKSA1 (Infineon CoolMOS™): 34.6A rating at 650V, 100mOhm Rds On, active production status

Automotive-Grade Option:

IPW60R099CPAFKSA1 from Infineon provides AEC-Q101 automotive qualification with 31A continuous current rating and 600V Vdss. This part is suitable for applications requiring automotive-grade component certification.

Higher Voltage Alternative:

SCT3080ALGC11 from Rohm Semiconductor offers SiCFET technology with 650V rating and extended temperature capability to 175°C. This silicon carbide device provides superior switching characteristics for high-frequency applications, though at reduced current rating of 30A.

Parts to Avoid for New Designs:

SPW35N60CFDFKSA1 carries "Not For New Designs" status and should not be selected for new system implementations despite electrical compatibility.

Frequently Asked Questions (FAQ)

Q: Can APT56F60B2 directly replace IXFX52N60Q2 in existing designs?

A: Yes. APT56F60B2 maintains identical 600V Vdss rating, exceeds the 52A current requirement at 60A, uses the same TO-247-3 package, and supports the full -55°C to 150°C operating range. Gate drive voltage and threshold characteristics are compatible with standard 10V gate drive circuits.

Q: What is the primary limitation of reduced-current substitutes like STW34NM60N?

A: Reduced-current alternatives (29A to 34A) are suitable only for applications where continuous drain current does not exceed their rated values. These parts cannot be used in designs requiring the full 52A capability of the original IXFX52N60Q2.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All listed substitute parts carry RoHS3 compliance certification and REACH unaffected status, matching the environmental compliance profile of the original IXFX52N60Q2.

Q: Why does SCT3080ALGC11 have different gate drive voltage requirements?

A: SCT3080ALGC11 is a silicon carbide (SiCFET) device requiring 18V gate drive voltage compared to the 10V standard for silicon MOSFETs. This difference necessitates gate drive circuit modifications and is not a direct pin-compatible substitute.

Q: Which substitute offers the lowest on-resistance?

A: AOK42S60L provides 99mOhm Rds On at 21A, and IPW60R099P7XKSA1 provides 99mOhm Rds On at 10.5A. However, AOK42S60L is obsolete. Among active-status parts, IPW60R099P7XKSA1 offers the lowest on-resistance at 99mOhm.

Q: Can I use a higher voltage-rated part (650V) in place of the 600V original?

A: Yes. Higher voltage ratings provide additional design margin. SPW35N60C3FKSA1 and STW30N65M5 both operate at 650V and are compatible with 600V circuit designs. This substitution does not compromise functionality.

Q: What is the impact of different gate charge values on circuit design?

A: Gate charge (Qg) affects gate drive circuit power consumption and switching speed. Lower Qg values (36-80nC in active alternatives) reduce gate drive power requirements compared to the original 198nC specification. Existing gate drive circuits will function with these parts, though switching characteristics may improve.

Q: Is the PLUS247™-3 package identical to standard TO-247-3?

A: PLUS247™-3 is a variant of TO-247-3 package. All listed substitutes use standard TO-247-3 or compatible through-hole packages with identical pin configurations and mechanical dimensions, ensuring direct PCB compatibility.

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