IXFX52N100X Equivalent & Substitute Parts

Part Overview

The IXFX52N100X is an N-Channel MOSFET manufactured by IXYS, part of the HiPerFET™ Ultra X series. This device is rated for 1000V drain-to-source voltage with a continuous drain current of 52A at 25°C and maximum power dissipation of 1250W. The component is housed in a PLUS247™-3 package (TO-247-3 variant) and is designed for through-hole mounting applications requiring high-voltage switching performance.

The IXFX52N100X maintains Active product status with full RoHS3 compliance and unlimited moisture sensitivity rating. Substitute components are identified when equivalent electrical performance parameters are required but the original part is unavailable, or when alternative device characteristics better suit specific application constraints.

Substiute Parts

IXFX52N100X

IXYSIn Stock: 895IXFX52N100X Datasheet

Current PartRFQ

SCT3080KLGC11

Rohm SemiconductorIn Stock: 1408SCT3080KLGC11 Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution of the IXFX52N100X is evaluated based on the following critical electrical and mechanical parameters:

Voltage Rating Compatibility: The substitute must support the application's maximum drain-to-source voltage requirement. The IXFX52N100X operates at 1000V; substitutes with equal or higher Vdss ratings are acceptable.

Current Handling Capacity: The continuous drain current rating must meet or exceed the application's steady-state current demand. The IXFX52N100X provides 52A continuous current; substitutes must support equivalent or higher current levels.

Package and Mounting: The PLUS247™-3 (TO-247-3) through-hole package defines the physical footprint and pin configuration. Substitutes must use compatible package types to ensure direct board-level replacement without layout modifications.

On-State Resistance (Rds On): The maximum on-state resistance of 125 mOhm at specified gate and drain conditions directly affects power dissipation and thermal performance. Substitutes with comparable or lower Rds On values maintain equivalent switching efficiency.

Gate Charge and Input Capacitance: These parameters influence gate drive requirements and switching speed. Substitutes with similar or lower gate charge and input capacitance values ensure compatibility with existing gate drive circuits.

Technology and Temperature Range: The MOSFET technology type and maximum junction temperature define operational limits. Substitutes must support the application's thermal environment.

The SCT3080KLGC11 is identified as a substitute based on compatible package type (TO-247-3), through-hole mounting, and active product status with equivalent compliance certifications.

Parameter Comparison

Engineering Selection Recommendations

IXFX52N100X (Primary Component)

The IXFX52N100X is the specified component for applications requiring 1000V blocking voltage with 52A continuous current capacity and 1250W power dissipation. This MOSFET-based device is suitable for high-frequency switching applications where gate charge and input capacitance characteristics are optimized for conventional gate drive circuits. The device maintains Active product status with full RoHS3 compliance and unlimited moisture sensitivity rating, ensuring long-term availability and regulatory compliance.

SCT3080KLGC11 (Substitute Component)

The SCT3080KLGC11 is a SiCFET-based alternative with 1200V blocking voltage and 31A continuous current rating. This substitute is compatible at the package level (TO-247-3 through-hole mounting) and maintains equivalent compliance certifications (RoHS3, REACH Unaffected). The SCT3080KLGC11 exhibits significantly lower gate charge (60 nC versus 245 nC) and input capacitance (785 pF versus 6725 pF), which may reduce gate drive power requirements in switching applications.

Selection Criteria:

The IXFX52N100X is selected when the application requires the specified 52A continuous current capacity and 1250W power dissipation rating. The SCT3080KLGC11 is applicable only in applications where the 31A current rating is sufficient and where the higher voltage rating (1200V) and reduced gate charge characteristics provide system-level benefits. Both components share compatible through-hole package geometry and regulatory compliance status, enabling direct board-level substitution where electrical parameters align with application requirements.

Frequently Asked Questions (FAQ)

Q: Can the SCT3080KLGC11 directly replace the IXFX52N100X in all applications?

A: Direct replacement is limited by current rating. The SCT3080KLGC11 provides 31A continuous current versus the IXFX52N100X's 52A rating. Substitution is valid only when the application's maximum steady-state current does not exceed 31A. The higher voltage rating (1200V) of the SCT3080KLGC11 is compatible with 1000V applications.

Q: Are the package types physically compatible?

A: Both components use TO-247-3 through-hole packages. The IXFX52N100X uses PLUS247™-3 packaging, and the SCT3080KLGC11 uses TO-247N packaging. These package variants are mechanically compatible for board-level mounting without layout modifications.

Q: What are the differences in gate drive requirements?

A: The IXFX52N100X requires 245 nC gate charge at 10V drive voltage, while the SCT3080KLGC11 requires 60 nC at 18V drive voltage. The SCT3080KLGC11's lower gate charge reduces gate drive power dissipation but requires higher gate voltage. Existing gate drive circuits must be evaluated for voltage compatibility.

Q: How do the power dissipation ratings compare?

A: The IXFX52N100X is rated for 1250W maximum power dissipation, while the SCT3080KLGC11 is rated for 165W. This significant difference reflects the lower current rating of the SiCFET device. Thermal design must account for the specific power dissipation rating of the selected component.

Q: Are both components RoHS3 compliant?

A: Yes. Both the IXFX52N100X and SCT3080KLGC11 are RoHS3 compliant with REACH Unaffected status and unlimited moisture sensitivity rating (MSL 1). Both components meet equivalent regulatory requirements for industrial and commercial applications.

Q: What is the difference between MOSFET and SiCFET technology?

A: The IXFX52N100X uses conventional MOSFET (Metal Oxide) technology, while the SCT3080KLGC11 uses SiCFET (Silicon Carbide) technology. SiCFET devices typically exhibit lower gate charge, lower input capacitance, and higher temperature ratings. Technology selection depends on application-specific requirements for switching speed, gate drive complexity, and thermal performance.

Q: Can the SCT3080KLGC11 operate at the IXFX52N100X's maximum temperature?

A: The SCT3080KLGC11 supports higher maximum junction temperature (175°C) compared to the IXFX52N100X (150°C). Both devices operate within the -55°C to 150°C range of the IXFX52N100X, with the SCT3080KLGC11 providing additional thermal margin.