IXFX50N50 N-Channel 500V 50A MOSFET Equivalent & Substitute Parts

Part Overview

The IXFX50N50 is an N-Channel MOSFET manufactured by IXYS, rated for 500V drain-to-source voltage and 50A continuous drain current at 25°C. This device belongs to the HiPerFET™ series and is packaged in the PLUS247™-3 (TO-247-3 variant) through-hole configuration. The part is currently Active in product status with 1081 pieces in stock inventory. Finding equivalent and substitute parts is necessary to ensure design flexibility, manage supply chain continuity, and accommodate application-specific performance requirements while maintaining electrical and mechanical compatibility.

Substiute Parts

IXFX50N50

IXYSIn Stock: 1186IXFX50N50 Datasheet

Current PartRFQ

IXFX64N50Q3

IXYSIn Stock: 1145IXFX64N50Q3 Datasheet

SimilarRFQ

FDH50N50-F133

onsemiIn Stock: 1410FDH50N50-F133 Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution eligibility for the IXFX50N50 is determined by the following critical parameters:

Mandatory Compatibility Criteria:

• Drain to Source Voltage (Vdss): Must equal or exceed 500V
• Package Type: Must be TO-247-3 or PLUS247™-3 (through-hole mounting)
• FET Type: N-Channel MOSFET technology
• Operating Temperature Range: Must support -55°C to 150°C (TJ)
• Regulatory Compliance: ROHS3 compliant, REACH unaffected

Performance Parameters for Substitution:

• Continuous Drain Current (Id): Substitute must meet or exceed 50A at 25°C
• On-State Resistance (Rds On): Lower or equal values indicate improved performance
• Gate Charge (Qg): Lower values reduce switching losses
• Power Dissipation: Higher ratings provide thermal margin

The identified substitute parts meet all mandatory compatibility criteria and provide equivalent or enhanced electrical performance within the same package footprint.

Parameter Comparison

Engineering Selection Recommendations

IXFX64N50Q3 (IXYS HiPerFET™ Q3 Class)

This substitute provides superior electrical performance with 64A continuous drain current, 28.6% higher than the IXFX50N50. The on-state resistance is reduced to 85 mOhm, and gate charge is significantly lower at 145 nC, resulting in reduced switching losses. Power dissipation capability is doubled to 1000W. The device maintains identical 500V Vdss rating and operates across the same temperature range. Both parts share the PLUS247™-3 package footprint and are ROHS3 compliant. This substitute is suitable for applications requiring enhanced thermal performance or higher current capacity within the same voltage class.

FDH50N50-F133 (onsemi UniFET™)

This substitute maintains near-equivalent continuous drain current at 48A, representing a 4% reduction from the IXFX50N50. On-state resistance is marginally higher at 105 mOhm. Gate charge is substantially lower at 137 nC, providing switching efficiency benefits. Power dissipation is rated at 625W, offering 20% additional thermal margin. The device is packaged in standard TO-247-3 configuration and operates across the identical -55°C to 150°C temperature range. This substitute is suitable for applications where onsemi device qualification is required or where the marginal current reduction is acceptable.

Both substitutes maintain full regulatory compliance (ROHS3, REACH unaffected) and are currently in active production status with confirmed inventory availability.

Frequently Asked Questions (FAQ)

Q: Can the IXFX64N50Q3 be used as a direct replacement for the IXFX50N50?

A: Yes. Both devices share identical 500V Vdss rating, PLUS247™-3 package footprint, and -55°C to 150°C operating temperature range. The IXFX64N50Q3 provides higher current capacity (64A vs. 50A) and lower on-state resistance, making it a performance-enhanced substitute. No PCB layout modifications are required.

Q: What is the difference between PLUS247™-3 and TO-247-3 packaging?

A: PLUS247™-3 is IXYS's proprietary variant of the TO-247-3 package. Both are mechanically and electrically compatible through-hole packages with identical pin configurations and thermal characteristics. The FDH50N50-F133 uses standard TO-247-3 packaging and is physically interchangeable.

Q: Which substitute should I select if thermal performance is critical?

A: The IXFX64N50Q3 offers the highest power dissipation rating at 1000W (Tc), compared to 520W for the IXFX50N50 and 625W for the FDH50N50-F133. Additionally, its lower on-state resistance (85 mOhm) reduces I²R losses during operation.

Q: Are there any gate drive voltage differences between these parts?

A: The IXFX50N50 and FDH50N50-F133 both specify ±20V maximum gate voltage. The IXFX64N50Q3 allows ±30V, providing additional gate drive margin. All three parts operate with 10V drive voltage for maximum on-state resistance specification.

Q: Do all three parts meet the same regulatory requirements?

A: Yes. All three devices are ROHS3 compliant and REACH unaffected. ECCN classification is EAR99 for all parts, and HTSUS code is 8541.29.0095. Moisture sensitivity level is 1 (unlimited) for IXYS parts; onsemi FDH50N50-F133 is not applicable for MSL.

Q: What is the significance of lower gate charge in the substitute parts?

A: Lower gate charge (Qg) reduces the energy required to switch the transistor on and off, resulting in lower switching losses and reduced heat generation. The IXFX64N50Q3 (145 nC) and FDH50N50-F133 (137 nC) both provide approximately 56% lower gate charge than the IXFX50N50 (330 nC), improving overall circuit efficiency.

Q: Can I use the FDH50N50-F133 if my application requires exactly 50A continuous current?

A: The FDH50N50-F133 is rated for 48A continuous drain current, which is 4% below the IXFX50N50 specification. This substitute is suitable only if your application can tolerate this current reduction or operates below 48A nominal current.