IXFX48N60P N-Channel 600V 48A MOSFET Equivalent & Substitute Parts

Part Overview

The IXFX48N60P is an N-Channel 600V 48A MOSFET manufactured by IXYS in the HiPerFET™ series. This through-hole device is rated for 830W power dissipation and operates across a temperature range of -55°C to 150°C. The part is currently active in production and RoHS3 compliant.

Equivalent and substitute parts are identified based on matching electrical characteristics within the N-Channel MOSFET category, specifically devices rated for 600V drain-source voltage with continuous drain current ratings between 30A and 48A at 25°C. Substitutes must maintain compatible gate drive voltage requirements, thermal operating ranges, and through-hole mounting configurations to ensure direct functional replacement in existing circuit designs.

Key Parameters

Parameter	Value	Unit
Manufacturer	IXYS	—
Part Number	IXFX48N60P	—
FET Type	N-Channel	—
Technology	MOSFET (Metal Oxide)	—
Drain to Source Voltage (Vdss)	600	V
Continuous Drain Current (Id) @ 25°C	48	A
Drive Voltage (Max Rds On)	10	V
Rds On (Max) @ Id, Vgs	135	mOhm
Gate Charge (Qg) @ Vgs	150	nC
Power Dissipation (Max)	830	W
Operating Temperature Range	-55 to 150	°C
Mounting Type	Through Hole	—
Package / Case	TO-247-3	—
Product Status	Active	—
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitute parts for the IXFX48N60P are selected based on the following electrical and mechanical criteria:

Primary Matching Criteria:

Drain to Source Voltage (Vdss): 600V or higher
Continuous Drain Current (Id) @ 25°C: 30A to 48A range
Gate Drive Voltage: 10V nominal
Mounting Type: Through Hole
Package: TO-247-3 or compatible variant
Operating Temperature: Minimum -55°C to 150°C overlap

Secondary Compatibility Factors:

RoHS3 compliance
Rds On characteristics within acceptable range for switching applications
Gate charge (Qg) suitable for standard gate driver circuits
Input capacitance (Ciss) compatible with drive circuit design

Substitutes are grouped into two categories: direct MOSFET equivalents (silicon-based) and alternative technology devices (silicon carbide). All listed substitutes maintain the TO-247-3 through-hole form factor and operate within the specified voltage and current envelope.

Parameter Comparison

Parameter	IXFX48N60P	AOK42S60L	IPW60R099C6FKSA1	IPW60R099CPAFKSA1	IPW60R099P6XKSA1	SCT3080ALGC11
Manufacturer	IXYS	Alpha & Omega Semiconductor	Infineon	Infineon	Infineon	Rohm
Vdss (V)	600	600	600	600	600	650
Id @ 25°C (A)	48	39	37.9	31	37.9	30
Drive Voltage (V)	10	10	10	10	10	18
Rds On (Max) (mOhm)	135	99	99	105	99	104
Gate Charge Qg (nC)	150	40	119	80	70	48
Power Dissipation (W)	830	417	278	255	278	134
Operating Temp Range (°C)	-55 to 150	-55 to 150	-55 to 150	-40 to 150	-55 to 150	to 175
Technology	MOSFET	MOSFET	MOSFET	MOSFET	MOSFET	SiCFET
Package	TO-247-3	TO-247-3	TO-247-3	TO-247-3	TO-247-3	TO-247-3
Product Status	Active	Obsolete	Not For New Designs	Active	Active	Active
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

For Active Production Designs:

The IPW60R099CPAFKSA1 (Infineon CoolMOS™) is the primary recommended substitute. This device is actively produced, RoHS3 compliant, and carries AEC-Q101 automotive qualification. It operates across -40°C to 150°C and delivers 31A continuous drain current at 10V gate drive. The lower power dissipation rating (255W) requires thermal design verification in high-power applications.

The IPW60R099P6XKSA1 (Infineon CoolMOS™ P6) provides an alternative with 37.9A continuous drain current, matching the IXFX48N60P more closely in current capacity. This device is actively produced and operates across the full -55°C to 150°C temperature range. Gate charge is reduced to 70nC, improving switching efficiency.

For Existing Inventory or Legacy Support:

The AOK42S60L (Alpha & Omega Semiconductor aMOS™) is available in high inventory (1222 pcs) but carries obsolete product status. This device is suitable only for replacement in existing systems where design re-qualification is not required. It provides 39A continuous drain current and operates across -55°C to 150°C.

For High-Temperature or High-Efficiency Applications:

The SCT3080ALGC11 (Rohm SiCFET) represents an alternative technology approach. This silicon carbide device operates to 175°C junction temperature and delivers significantly lower gate charge (48nC). However, it requires 18V gate drive voltage, necessitating gate driver circuit modification. The 30A current rating and 134W power dissipation limit its use to lower-power applications.

Substitution Constraints:

The IXFX48N60P delivers 48A continuous drain current. No substitute in the provided list matches this current rating exactly. Designs requiring full 48A capacity must retain the original part or conduct thermal and electrical re-analysis with lower-current alternatives. The IPW60R099P6XKSA1 at 37.9A represents the closest match among active production devices.

Frequently Asked Questions (FAQ)

Q: Can the IPW60R099CPAFKSA1 directly replace the IXFX48N60P in all applications?

A: The IPW60R099CPAFKSA1 is electrically compatible for gate drive and voltage rating but delivers 31A versus 48A continuous drain current. Direct substitution is valid only in applications where the actual operating current does not exceed 31A. Thermal design must be re-evaluated due to lower power dissipation rating (255W versus 830W).

Q: Why does the SCT3080ALGC11 require a different gate drive voltage?

A: The SCT3080ALGC11 is a silicon carbide (SiCFET) device, which operates on different semiconductor physics than traditional silicon MOSFETs. It requires 18V gate drive versus 10V for silicon devices. Existing 10V gate driver circuits cannot be used without modification.

Q: Is the AOK42S60L suitable for new designs?

A: No. The AOK42S60L carries obsolete product status and should not be selected for new designs. It is available only for replacement in existing systems. For new designs, select from active production devices: IPW60R099CPAFKSA1, IPW60R099P6XKSA1, or retain the IXFX48N60P.

Q: What is the minimum continuous drain current I can use with these substitutes?

A: All listed substitutes are rated for continuous drain current at 25°C as specified in the parameter comparison table. There is no minimum operating current; however, thermal design must account for the actual power dissipation at your operating current and duty cycle.

Q: Are all substitutes RoHS3 compliant?

A: Yes. All listed substitute parts carry RoHS3 compliance certification, matching the IXFX48N60P compliance status.

Q: Can I use the IPW60R099P6XKSA1 in applications requiring -55°C operation?

A: Yes. The IPW60R099P6XKSA1 operates across -55°C to 150°C, matching the IXFX48N60P temperature range. No temperature-related constraints apply to this substitution.

Q: What is the difference between IPW60R099C6FKSA1 and IPW60R099P6XKSA1?

A: Both are Infineon 600V devices with 37.9A rating. The IPW60R099C6FKSA1 carries "Not For New Designs" status with 119nC gate charge. The IPW60R099P6XKSA1 is actively produced with reduced gate charge (70nC) and improved switching performance. For new designs, select the IPW60R099P6XKSA1.

Q: Does package compatibility extend beyond TO-247-3?

A: All listed substitutes use TO-247-3 or compatible TO-247 variants. Physical mounting and pin configuration are identical. PCB layout modifications are not required for package substitution.

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