IXFX48N50Q Equivalent & Substitute Parts

Part Overview

The IXFX48N50Q is an N-Channel 500V 48A MOSFET manufactured by IXYS in the HiPerFET™ Q Class series. This device is packaged in a PLUS247™-3 (TO-247-3 variant) through-hole configuration and is rated for 500W maximum power dissipation at case temperature. The IXFX48N50Q is classified as "Not For New Designs," indicating it has been superseded in the manufacturer's product roadmap. Identifying equivalent and substitute parts is necessary for applications requiring continued sourcing, design flexibility, or performance optimization within compatible electrical and mechanical parameters.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	500	V
Continuous Drain Current (Id) @ 25°C	48	A (Tc)
On-State Resistance (Rds On Max) @ Id, Vgs	100 mOhm @ 24A, 10V	mOhm
Gate Threshold Voltage (Vgs(th) Max) @ Id	4	V @ 4mA
Gate Charge (Qg Max) @ Vgs	190	nC @ 10V
Input Capacitance (Ciss Max) @ Vds	7000	pF @ 25V
Power Dissipation (Max)	500	W (Tc)
Operating Temperature Range	-55 to 150	°C (TJ)
Mounting Type	Through Hole	—
Package / Case	TO-247-3 Variant	—
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution of the IXFX48N50Q is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

Drain to Source Voltage (Vdss): Must equal or exceed 500V
Mounting Type: Must be through-hole configuration
Package Compatibility: Must be compatible with TO-247-3 or equivalent footprint
Operating Temperature Range: Must support -55°C to 150°C (TJ)
RoHS Compliance: Must maintain ROHS3 Compliant status

Secondary Performance Considerations:

Continuous Drain Current (Id): Substitute parts may have equal or higher current ratings
On-State Resistance (Rds On): Lower values indicate improved performance
Gate Charge (Qg): Lower values reduce switching losses
Power Dissipation (Max): Higher ratings provide thermal margin

The substitute parts identified (IXFX64N50P and APT5014BLLG) meet the primary substitution criteria. The IXFX64N50P offers higher current and power ratings within the same manufacturer series. The APT5014BLLG provides an alternative from a different manufacturer with compatible voltage and package specifications, though with lower current and power ratings.

Parameter Comparison

Parameter	IXFX48N50Q (Main)	IXFX64N50P (Substitute)	APT5014BLLG (Substitute)
Manufacturer	IXYS	IXYS	Microchip Technology
Drain to Source Voltage (Vdss)	500 V	500 V	500 V
Continuous Drain Current (Id) @ 25°C	48 A (Tc)	64 A (Tc)	35 A (Tc)
On-State Resistance (Rds On Max) @ Id, Vgs	100 mOhm @ 24A, 10V	85 mOhm @ 32A, 10V	140 mOhm @ 17.5A, 10V
Gate Threshold Voltage (Vgs(th) Max) @ Id	4 V @ 4mA	5.5 V @ 8mA	5 V @ 1mA
Gate Charge (Qg Max) @ Vgs	190 nC @ 10V	150 nC @ 10V	72 nC @ 10V
Input Capacitance (Ciss Max) @ Vds	7000 pF @ 25V	8700 pF @ 25V	3261 pF @ 25V
Power Dissipation (Max)	500 W (Tc)	830 W (Tc)	403 W (Tc)
Operating Temperature Range	-55 to 150 °C (TJ)	-55 to 150 °C (TJ)	-55 to 150 °C (TJ)
Mounting Type	Through Hole	Through Hole	Through Hole
Package / Case	TO-247-3 Variant	PLUS247™-3	TO-247 [B]
Product Status	Not For New Designs	Active	Active
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

IXFX64N50P (IXYS HiPerFET™ Polar Series)

The IXFX64N50P is an active product from the same manufacturer (IXYS) and represents a direct performance upgrade path. It maintains 500V Vdss rating and through-hole PLUS247™-3 packaging identical to the IXFX48N50Q. The IXFX64N50P provides 64A continuous drain current (33% higher than the main part) and 830W power dissipation (66% higher), with improved on-state resistance of 85 mOhm compared to 100 mOhm. Gate charge is reduced to 150 nC, lowering switching losses. This part is suitable for applications requiring higher current capacity or thermal margin within the same voltage class and package footprint. Active product status ensures continued availability and support.

APT5014BLLG (Microchip Technology POWER MOS 7® Series)

The APT5014BLLG is an active product from Microchip Technology offering an alternative from a different manufacturer. It maintains 500V Vdss rating and through-hole TO-247 [B] packaging compatible with TO-247-3 footprints. The APT5014BLLG provides 35A continuous drain current (27% lower than the main part) and 403W power dissipation (19% lower), with higher on-state resistance of 140 mOhm. Gate charge is significantly reduced to 72 nC, providing substantial switching loss reduction. This part is suitable for applications where current and power requirements are lower than the IXFX48N50Q, or where switching efficiency is prioritized. Active product status and ROHS3 compliance ensure regulatory alignment.

Both substitute parts maintain ROHS3 compliance and REACH unaffected status, ensuring compatibility with environmental and regulatory requirements applicable to the original part.

Frequently Asked Questions (FAQ)

Q: Can the IXFX64N50P directly replace the IXFX48N50Q in existing designs?

A: The IXFX64N50P is electrically compatible as a direct replacement. Both parts share identical 500V Vdss rating, through-hole mounting, and TO-247-3 package footprint. The IXFX64N50P provides higher current (64A vs. 48A) and power ratings (830W vs. 500W), making it suitable for applications where the original part was thermally or current-limited. Gate charge reduction (150 nC vs. 190 nC) may improve switching performance. No circuit modifications are required for footprint compatibility.

Q: What are the key differences between IXFX64N50P and APT5014BLLG?

A: Both parts maintain 500V Vdss and through-hole packaging. The IXFX64N50P (IXYS) provides higher current (64A vs. 35A) and power dissipation (830W vs. 403W), with lower on-state resistance (85 mOhm vs. 140 mOhm). The APT5014BLLG (Microchip) offers significantly lower gate charge (72 nC vs. 150 nC), reducing switching losses and driver power requirements. Selection depends on whether the application prioritizes current capacity or switching efficiency.

Q: Is the IXFX48N50Q still available for new orders?

A: The IXFX48N50Q is classified as "Not For New Designs" by the manufacturer, indicating it has been superseded. However, inventory of 14,288 pieces is currently available. For new designs, IXYS recommends the IXFX64N50P as the active replacement within the HiPerFET™ series.

Q: Are there package compatibility concerns between PLUS247™-3 and TO-247 [B]?

A: Both PLUS247™-3 and TO-247 [B] are TO-247-3 variants with compatible through-hole footprints. Physical pin spacing and mounting hole locations are identical, allowing direct PCB substitution without layout modifications.

Q: How do gate charge differences affect circuit design?

A: Gate charge (Qg) determines the charge required to switch the MOSFET on or off. The IXFX48N50Q requires 190 nC, the IXFX64N50P requires 150 nC, and the APT5014BLLG requires 72 nC. Lower gate charge reduces driver power dissipation and switching time. If the gate driver is current-limited, the APT5014BLLG's lower gate charge may provide faster switching. Existing gate driver circuits designed for the IXFX48N50Q will operate with either substitute part without modification.

Q: What is the impact of on-state resistance differences?

A: On-state resistance (Rds On) directly affects conduction losses. The IXFX48N50Q has 100 mOhm, the IXFX64N50P has 85 mOhm (15% lower), and the APT5014BLLG has 140 mOhm (40% higher). Lower Rds On reduces heat generation during continuous operation. The IXFX64N50P provides improved efficiency, while the APT5014BLLG may require additional thermal management in high-current applications.

Q: Are all three parts RoHS and REACH compliant?

A: Yes. The IXFX48N50Q, IXFX64N50P, and APT5014BLLG are all ROHS3 Compliant and REACH Unaffected, meeting environmental and regulatory requirements for EU and global markets.

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