IXFX44N80Q3 Equivalent & Substitute Parts

Part Overview

The IXFX44N80Q3 is an N-Channel MOSFET manufactured by IXYS, rated for 800V drain-to-source voltage with 44A continuous drain current at 25°C. This device belongs to the HiPerFET™ Q3 Class series and is housed in a TO-247-3 through-hole package. The part is Active in product status with RoHS3 compliance and unlimited moisture sensitivity rating.

Substitute parts are identified when equivalent electrical performance can be achieved within specified parameter tolerances while maintaining through-hole mounting compatibility and compliance certifications. Alternative models may be required due to inventory availability, application-specific performance requirements, or design optimization needs.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	800	V
Continuous Drain Current (Id) @ 25°C	44	A
On-State Resistance (Rds On) @ 22A, 10V	190	mOhm
Gate Threshold Voltage (Vgs(th)) @ 8mA	6.5	V
Gate Charge (Qg) @ 10V	185	nC
Input Capacitance (Ciss) @ 25V	9840	pF
Maximum Power Dissipation (Tc)	1250	W
Operating Temperature Range	-55 to 150	°C
Package Type	TO-247-3	Through Hole
FET Technology	MOSFET (Metal Oxide)	—

Substitute Part Grouping Explanation

Substitution eligibility for the IXFX44N80Q3 is determined by the following criteria:

Primary Electrical Parameters:

Drain-to-Source Voltage (Vdss) rating must equal or exceed 800V
Continuous Drain Current (Id) must equal or exceed 44A at 25°C
On-State Resistance (Rds On) must not exceed 190mOhm at specified gate voltage
Gate Charge (Qg) and Input Capacitance (Ciss) must be compatible with driver circuit requirements

Mechanical & Packaging Requirements:

Through-hole mounting configuration (TO-247-3 package variant)
Gate voltage compatibility (±30V maximum for IXFX44N80Q3)

Compliance & Status:

Active product status
RoHS3 compliance
Moisture Sensitivity Level 1 (Unlimited)

The substitute parts listed below are identified from the provided substitute list. Each part has been cross-referenced against the primary electrical and mechanical parameters of the IXFX44N80Q3. Parts with lower voltage or current ratings, or incompatible package configurations, are included in the comparison table to provide complete reference information for design engineers.

Parameter Comparison

Parameter	IXFX44N80Q3 (Main)	IPW65R150CFDAFKSA1	SCT3120ALGC11	TK20N60W5,S1VF
Manufacturer	IXYS	Infineon Technologies	Rohm Semiconductor	Toshiba Semiconductor
Vdss (V)	800	650	650	600
Id @ 25°C (A)	44	22.4	21	20
Rds On (mOhm)	190 @ 22A, 10V	150 @ 9.3A, 10V	156 @ 6.7A, 18V	175 @ 10A, 10V
Vgs(th) (V)	6.5 @ 8mA	4.5 @ 900µA	5.6 @ 3.33mA	4.5 @ 1mA
Qg (nC)	185 @ 10V	86 @ 10V	38 @ 18V	55 @ 10V
Ciss (pF)	9840 @ 25V	2340 @ 100V	460 @ 500V	1800 @ 300V
Power Dissipation (W)	1250	195.3	103	165
Operating Temperature (°C)	-55 to 150	-40 to 150	Up to 175	Up to 150
Package	TO-247-3	PG-TO247-3	TO-247N	TO-247
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	SiCFET (Silicon Carbide)	MOSFET (Metal Oxide)
RoHS3 Compliance	Yes	Yes	Yes	Yes
Product Status	Active	Active	Active	Active

Engineering Selection Recommendations

Direct Substitution Capability:

The IXFX44N80Q3 operates at 800V with 44A continuous drain current. The listed substitute parts (IPW65R150CFDAFKSA1, SCT3120ALGC11, TK20N60W5,S1VF) all feature reduced voltage ratings (650V, 650V, and 600V respectively) and lower current ratings (22.4A, 21A, and 20A respectively). These parts are not direct substitutes for applications requiring the full 800V/44A performance envelope.

Compatibility Assessment:

All listed parts maintain Active product status and RoHS3 compliance. The IPW65R150CFDAFKSA1 carries AEC-Q101 automotive qualification, suitable for automotive-grade applications. The SCT3120ALGC11 employs SiCFET technology with lower gate charge (38nC) and significantly reduced input capacitance (460pF), offering potential advantages in high-frequency switching applications despite lower power dissipation capability.

Package Compatibility:

All substitute parts are housed in TO-247-3 or equivalent through-hole packages (PG-TO247-3, TO-247N, TO-247), ensuring mechanical compatibility with existing PCB layouts and socket configurations.

Application-Specific Considerations:

Selection of substitute parts must account for the specific voltage and current requirements of the target application. Applications operating below 650V with current demands under 22A may utilize the Infineon IPW65R150CFDAFKSA1. Applications requiring enhanced thermal performance or high-frequency operation may benefit from the Rohm SCT3120ALGC11 SiCFET technology. The Toshiba TK20N60W5,S1VF is suitable for 600V applications with current requirements up to 20A.

Frequently Asked Questions (FAQ)

Q: Can the IPW65R150CFDAFKSA1 replace the IXFX44N80Q3 in a 800V application?

A: No. The IPW65R150CFDAFKSA1 is rated for 650V maximum drain-to-source voltage, which is insufficient for applications requiring 800V operation. Exceeding the device voltage rating will result in device failure.

Q: What is the primary difference between the SCT3120ALGC11 and the other substitute parts?

A: The SCT3120ALGC11 uses SiCFET (Silicon Carbide) technology, whereas the IXFX44N80Q3, IPW65R150CFDAFKSA1, and TK20N60W5,S1VF employ conventional MOSFET (Metal Oxide) technology. SiCFET devices exhibit lower gate charge (38nC vs. 185nC) and significantly reduced input capacitance, enabling faster switching speeds and reduced driver power consumption.

Q: Are all substitute parts compatible with the same PCB footprint?

A: Yes. All substitute parts use TO-247-3 or equivalent through-hole packages (PG-TO247-3, TO-247N, TO-247), which share the same pin configuration and PCB mounting footprint as the IXFX44N80Q3.

Q: Which substitute part offers the lowest on-state resistance?

A: The IPW65R150CFDAFKSA1 offers the lowest on-state resistance at 150mOhm (measured at 9.3A, 10V gate voltage), compared to 190mOhm for the IXFX44N80Q3 (at 22A, 10V). However, this comparison is made at different current levels and must be evaluated within the context of the specific application's operating point.

Q: Does the IXFX44N80Q3 have automotive qualification?

A: The IXFX44N80Q3 does not carry AEC-Q101 automotive qualification. The IPW65R150CFDAFKSA1 is AEC-Q101 qualified and suitable for automotive applications requiring 650V operation.

Q: What is the temperature operating range difference between the main part and substitutes?

A: The IXFX44N80Q3 operates from -55°C to 150°C. The IPW65R150CFDAFKSA1 operates from -40°C to 150°C (narrower low-temperature range). The SCT3120ALGC11 supports operation up to 175°C junction temperature. The TK20N60W5,S1VF operates up to 150°C. Applications requiring operation below -40°C must use the IXFX44N80Q3.

Q: Can I use a lower-voltage rated device in a lower-voltage application?

A: Yes, provided all other electrical parameters (continuous drain current, on-state resistance, gate charge, and input capacitance) meet or exceed the application requirements. A device rated for 650V can be used in a 600V application. However, the lower current and power dissipation ratings of substitute parts must be verified against the specific application load.

Q: What does RoHS3 compliance mean?

A: RoHS3 compliance indicates the device meets Restriction of Hazardous Substances Directive requirements, restricting the use of lead, mercury, cadmium, hexavalent chromium, polybrominated biphenyls, and polybrominated diphenyl ethers. All listed parts are RoHS3 compliant.

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