IXFX44N80P N-Channel MOSFET 800V 44A Equivalent & Substitute Parts

Part Overview

The IXFX44N80P is an N-Channel MOSFET manufactured by IXYS, part of the HiPerFET™ Polar series. This device is rated for 800V drain-to-source voltage with 44A continuous drain current and 1040W maximum power dissipation in a through-hole PLUS247™-3 package. The component is currently Active in product status with 1747 units in stock.

Substitute parts are identified when equivalent electrical performance can be achieved within specified parameter tolerances, or when design requirements permit operation at reduced voltage or current ratings. Substitution becomes necessary due to component availability, obsolescence, or design optimization requirements.

Substiute Parts

IXFX44N80P

IXYSIn Stock: 1797IXFX44N80P Datasheet

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R6024KNZ1C9

Rohm SemiconductorIn Stock: 1467R6024KNZ1C9 Datasheet

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SCT3120ALGC11

Rohm SemiconductorIn Stock: 2101SCT3120ALGC11 Datasheet

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STW24N60M2

STMicroelectronicsIn Stock: 25755STW24N60M2 Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution logic for the IXFX44N80P is based on the following criteria:

Primary Substitution Parameters:

• FET Type: N-Channel (required match)
• Technology: MOSFET or SiCFET (both acceptable for N-Channel applications)
• Mounting Type: Through Hole (required match)
• Package / Case: TO-247-3 or compatible TO-247 variants (required match)
• Operating Temperature Range: Minimum -55°C to 150°C (required match or exceed)
• RoHS Status: ROHS3 Compliant (required match)

Electrical Performance Parameters (Substitution Allowed When):

• Drain to Source Voltage (Vdss): Equal to or greater than 800V (downrating permitted for specific applications)
• Current - Continuous Drain (Id): Equal to or greater than 44A (downrating permitted for specific applications)
• Power Dissipation (Max): Equal to or greater than 1040W (downrating permitted for specific applications)
• Rds On (Max): Lower or equal values acceptable (lower resistance improves performance)

The identified substitute parts operate at reduced voltage or current ratings compared to the IXFX44N80P. These substitutes are valid for applications where the lower electrical specifications are sufficient for the intended circuit design.

Parameter Comparison

Engineering Selection Recommendations

IXFX44N80P (Primary Component)

The IXFX44N80P remains the optimal selection for applications requiring the full 800V voltage rating and 44A current capacity. This component is Active in product status with established supply availability (1747 units in stock). ROHS3 compliance and REACH unaffected status confirm regulatory alignment for current manufacturing standards.

R6024KNZ1C9 (Rohm Semiconductor)

This substitute is suitable for applications operating at 600V or lower. The 24A continuous drain current and 245W power dissipation represent significant reductions from the primary component. Product status is Obsolete, indicating limited future availability. Selection of this part is restricted to legacy system maintenance or applications where voltage and current specifications are compatible with reduced ratings. ROHS3 compliance is confirmed.

SCT3120ALGC11 (Rohm Semiconductor)

This SiCFET technology substitute operates at 650V with 21A continuous drain current and 103W power dissipation. The silicon carbide technology enables operation at elevated junction temperatures up to 175°C, exceeding the primary component's 150°C maximum. Product status is Active with 2000 units in stock, ensuring supply continuity. This substitute is applicable to applications where voltage and current requirements are compatible with the reduced ratings and where silicon carbide performance characteristics provide system benefits. ROHS3 compliance is confirmed.

STW24N60M2 (STMicroelectronics)

This MDmesh™ II Plus series MOSFET operates at 600V with 18A continuous drain current and 150W power dissipation. Product status is Active with the highest inventory availability (25,711 units in stock), providing strong supply assurance. This substitute is suitable for applications where 600V voltage rating and 18A current capacity satisfy design requirements. ROHS3 compliance is confirmed.

Frequently Asked Questions (FAQ)

Q: Can the R6024KNZ1C9 be used as a direct replacement for the IXFX44N80P?

A: The R6024KNZ1C9 is not a direct replacement. It operates at 600V maximum drain-to-source voltage compared to the IXFX44N80P's 800V rating, and provides 24A continuous drain current versus 44A. Substitution is valid only for applications where the circuit design operates at 600V or lower and requires 24A or less continuous current. The R6024KNZ1C9 is Obsolete in product status, limiting future availability.

Q: What is the primary difference between the SCT3120ALGC11 and the other substitutes?

A: The SCT3120ALGC11 uses SiCFET (Silicon Carbide) technology, whereas the IXFX44N80P, R6024KNZ1C9, and STW24N60M2 use conventional MOSFET (Metal Oxide) technology. Silicon carbide devices enable higher junction temperature operation (175°C versus 150°C) and typically exhibit lower switching losses. The SCT3120ALGC11 is rated for 650V and 21A, representing reduced voltage and current specifications compared to the primary component.

Q: Are all substitute parts available in the same TO-247-3 package?

A: Yes. The IXFX44N80P, R6024KNZ1C9, SCT3120ALGC11, and STW24N60M2 are all packaged in TO-247-3 or compatible TO-247 through-hole configurations. Physical mounting compatibility is confirmed across all listed parts.

Q: Which substitute offers the best long-term supply availability?

A: The STW24N60M2 offers the strongest supply position with 25,711 units in current inventory and Active product status. The SCT3120ALGC11 provides 2000 units in stock and Active status. The R6024KNZ1C9 is Obsolete, indicating declining availability. The IXFX44N80P maintains 1747 units in stock with Active status.

Q: Can I use a substitute part rated for lower voltage in a circuit designed for 800V operation?

A: No. Using a substitute part with a lower Vdss rating in a circuit designed for 800V operation will result in device failure. Voltage derating is not permitted. Substitution with lower-voltage parts is valid only when the circuit design is modified to operate at the lower voltage specification of the substitute component.

Q: What compliance certifications are common across all listed parts?

A: All four components (IXFX44N80P, R6024KNZ1C9, SCT3120ALGC11, and STW24N60M2) are ROHS3 Compliant and REACH Unaffected. All are classified under ECCN EAR99 and HTSUS 8541.29.0095. Moisture Sensitivity Level is 1 (Unlimited) for all parts.