IXFX44N60 N-Channel 600V 44A MOSFET Equivalent & Substitute Parts

Part Overview

The IXFX44N60 is an N-Channel 600V 44A MOSFET manufactured by IXYS in the HiPerFET™ series. This through-hole device is packaged in PLUS247™-3 (TO-247-3 variant) and is rated for 560W maximum power dissipation at the case temperature. The part is currently Active in product status and RoHS3 compliant.

Equivalent and substitute parts are identified based on matching or exceeding critical electrical parameters including drain-source voltage (Vdss), continuous drain current (Id), on-state resistance (Rds On), and gate charge characteristics. Substitutes may vary in power dissipation, gate charge, and input capacitance while maintaining functional compatibility within the specified voltage and current ratings.

Substiute Parts

IXFX44N60
IXYSIn Stock: 1723IXFX44N60 Datasheet
IXFX44N60
Current Part
IXFX64N60P
IXYSIn Stock: 13999IXFX64N60P Datasheet
IXFX64N60P
Direct
AOK42S60L
Alpha & Omega Semiconductor Inc.In Stock: 1246AOK42S60L Datasheet
AOK42S60L
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FCH104N60F-F085
onsemiIn Stock: 827FCH104N60F-F085 Datasheet
FCH104N60F-F085
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FCH110N65F-F155
Fairchild SemiconductorIn Stock: 1332FCH110N65F-F155 Datasheet
FCH110N65F-F155
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IPW60R099CPAFKSA1
Infineon TechnologiesIn Stock: 989IPW60R099CPAFKSA1 Datasheet
IPW60R099CPAFKSA1
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SCT3080ALGC11
Rohm SemiconductorIn Stock: 2219SCT3080ALGC11 Datasheet
SCT3080ALGC11
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Key Parameters

Parameter Value Unit
Drain to Source Voltage (Vdss) 600 V
Continuous Drain Current (Id) @ 25°C 44 A (Tc)
Rds On (Max) @ Id, Vgs 130 mOhm @ 22A, 10V
Gate Charge (Qg) (Max) @ Vgs 330 nC @ 10V
Vgs(th) (Max) @ Id 4.5 V @ 8mA
Input Capacitance (Ciss) (Max) @ Vds 8900 pF @ 25V
Power Dissipation (Max) 560 W (Tc)
Operating Temperature Range -55 to 150 °C (TJ)
Package Type TO-247-3 Through Hole
Vgs (Max) ±20 V

Substitute Part Grouping Explanation

Substitution of the IXFX44N60 is determined by the following critical parameters:

Mandatory Matching Criteria:

  • Drain to Source Voltage (Vdss): 600V minimum
  • Continuous Drain Current (Id): 44A or greater
  • Package Type: TO-247-3 (through-hole mounting)
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)

Secondary Compatibility Parameters:

  • Rds On (Max): Lower or equal values indicate improved performance
  • Gate Charge (Qg): Lower values reduce switching losses
  • Input Capacitance (Ciss): Affects gate drive requirements
  • Operating Temperature Range: Must encompass -55°C to 150°C
  • Vgs (Max): ±20V or greater

Substitute parts are grouped into two categories: Direct Manufacturer Equivalents (same manufacturer, enhanced specifications) and Similar Cross-Manufacturer Parts (alternative manufacturers with comparable electrical characteristics). Parts with obsolete or "Not For New Designs" status are included for reference in legacy system support only.

Parameter Comparison

Part Number Manufacturer Vdss (V) Id @ 25°C (A) Rds On (mOhm) Qg (nC) Ciss (pF) Pd Max (W) Status Package
IXFX44N60 IXYS 600 44 130 @ 22A, 10V 330 @ 10V 8900 @ 25V 560 Active TO-247-3
IXFX64N60P IXYS 600 64 96 @ 500mA, 10V 200 @ 10V 12000 @ 25V 1040 Active TO-247-3
AOK42S60L Alpha & Omega Semiconductor Inc. 600 39 99 @ 21A, 10V 40 @ 10V 2154 @ 100V 417 Obsolete TO-247-3
FCH104N60F-F085 onsemi 600 37 104 @ 18.5A, 10V 139 @ 10V 4302 @ 100V 357 Not For New Designs TO-247-3
FCH110N65F-F155 Fairchild Semiconductor 650 35 110 @ 17.5A, 10V 145 @ 10V 4895 @ 100V 357 Active TO-247-3
IPW60R099CPAFKSA1 Infineon Technologies 600 31 105 @ 18A, 10V 80 @ 10V 2800 @ 100V 255 Active TO-247-3
SCT3080ALGC11 Rohm Semiconductor 650 30 104 @ 10A, 18V 48 @ 18V 571 @ 500V 134 Active TO-247-3

Engineering Selection Recommendations

Direct Upgrade Path: The IXFX64N60P (IXYS) is the primary direct substitute. It maintains identical voltage rating (600V), exceeds current capability (64A vs. 44A), reduces on-state resistance (96 mOhm vs. 130 mOhm), and increases power dissipation capacity (1040W vs. 560W). Both parts are Active status, RoHS3 compliant, and use identical PLUS247™-3 packaging. Gate charge is reduced (200 nC vs. 330 nC), improving switching efficiency.

Cross-Manufacturer Alternatives: FCH110N65F-F155 (Fairchild Semiconductor) provides a 650V rated alternative with Active product status. The higher voltage rating (650V vs. 600V) offers additional design margin. Current rating (35A) is lower than the IXFX44N60, making this suitable for applications where the 44A rating is not fully utilized.

IPW60R099CPAFKSA1 (Infineon Technologies CoolMOS™) is Active status with AEC-Q101 automotive qualification. However, the 31A continuous drain current rating falls below the IXFX44N60 specification and is not suitable for direct substitution in applications requiring the full 44A rating.

Legacy System Support Only: AOK42S60L (Alpha & Omega Semiconductor Inc.) is Obsolete status. FCH104N60F-F085 (onsemi) is marked "Not For New Designs." These parts are included for reference in legacy system maintenance only and should not be selected for new designs.

Technology Variant: SCT3080ALGC11 (Rohm Semiconductor) is a SiCFET (Silicon Carbide) device with 650V rating and 30A current capability. This represents a different semiconductor technology with significantly lower power dissipation (134W vs. 560W) and reduced gate charge (48 nC vs. 330 nC). SiCFET substitution requires verification of gate drive circuit compatibility due to different Vgs(th) and Vgs(Max) specifications.

Frequently Asked Questions (FAQ)

Q: Can the IXFX64N60P directly replace the IXFX44N60 in my application?

A: Yes, the IXFX64N60P is a direct substitute. It maintains the same 600V voltage rating and TO-247-3 package, while providing higher current capability (64A vs. 44A), lower on-state resistance (96 mOhm vs. 130 mOhm), and greater power dissipation capacity (1040W vs. 560W). Both parts are Active status and RoHS3 compliant. The reduced gate charge (200 nC vs. 330 nC) may improve switching performance in your application.

Q: Why is the AOK42S60L listed if it is Obsolete?

A: The AOK42S60L is included for reference in legacy system support and repair applications. For new designs, the IXFX64N60P or FCH110N65F-F155 are recommended. Obsolete parts may have limited availability and should not be specified for new production.

Q: What is the difference between the IXFX44N60 and FCH110N65F-F155?

A: The FCH110N65F-F155 has a higher voltage rating (650V vs. 600V) but lower current capability (35A vs. 44A). The 650V rating provides additional voltage margin for transient protection. However, the 35A current rating is insufficient for applications requiring the full 44A specification of the IXFX44N60. This part is suitable only for applications with lower current demands.

Q: Can I use the IPW60R099CPAFKSA1 as a substitute?

A: The IPW60R099CPAFKSA1 is not recommended as a direct substitute. While it maintains the 600V voltage rating and TO-247-3 package, the continuous drain current rating (31A) is below the IXFX44N60 specification (44A). This part is suitable only for applications with current requirements below 31A. The IPW60R099CPAFKSA1 does offer AEC-Q101 automotive qualification if that certification is required.

Q: What is the SCT3080ALGC11 and why is it different?

A: The SCT3080ALGC11 is a SiCFET (Silicon Carbide) device, representing a different semiconductor technology from the MOSFET devices listed. While it offers advantages such as significantly lower power dissipation (134W vs. 560W) and reduced gate charge (48 nC vs. 330 nC), it has a lower current rating (30A vs. 44A) and requires different gate drive circuit design due to different threshold voltage and maximum gate voltage specifications. SiCFET substitution requires full circuit verification.

Q: Are all substitute parts RoHS3 compliant?

A: Yes, all listed substitute parts are RoHS3 compliant. All parts are also REACH Unaffected and classified as EAR99 for export control purposes.

Q: What is the significance of gate charge (Qg) differences?

A: Gate charge affects switching speed and gate drive power requirements. Lower gate charge (such as the 200 nC of IXFX64N60P vs. 330 nC of IXFX44N60) reduces switching losses and simplifies gate drive circuit design. Higher gate charge requires more drive current from the gate driver circuit. The SCT3080ALGC11 has exceptionally low gate charge (48 nC) due to its SiCFET technology.

Q: Can I use a part with lower current rating if my application does not require the full 44A?

A: Yes, parts with lower current ratings (such as IPW60R099CPAFKSA1 at 31A or FCH110N65F-F155 at 35A) can be used in applications where the actual current demand is below their rated specification. However, the voltage rating (600V minimum) and package type (TO-247-3) must still match your application requirements. Verify that the lower current rating does not create thermal or reliability concerns in your specific circuit.

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