IXFX44N50Q N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The IXFX44N50Q is an N-Channel MOSFET manufactured by IXYS, rated for 500V drain-to-source voltage with 44A continuous drain current at 25°C. This device is packaged in the PLUS247™-3 (TO-247-3 variant) through-hole configuration and is part of the HiPerFET™ Q Class series. The IXFX44N50Q is classified as obsolete, making identification of functionally equivalent substitute components necessary for ongoing design support, maintenance, and production continuity.

Substiute Parts

IXFX44N50Q
IXYSIn Stock: 14204IXFX44N50Q Datasheet
IXFX44N50Q
Current Part
FDH44N50
onsemiIn Stock: 2508FDH44N50 Datasheet
FDH44N50
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Key Parameters

Parameter Value Unit
Drain to Source Voltage (Vdss) 500 V
Continuous Drain Current (Id) @ 25°C 44 A (Tc)
Drive Voltage (Max Rds On) 10 V
Rds On (Max) @ Id, Vgs 120 mOhm @ 22A, 10V
Vgs(th) (Max) @ Id 4 V @ 4mA
Gate Charge (Qg) (Max) @ Vgs 190 nC @ 10V
Power Dissipation (Max) 500 W (Tc)
Operating Temperature Range -55 to 150 °C (TJ)
Package Type TO-247-3 Through Hole

Substitute Part Grouping Explanation

Substitution of the IXFX44N50Q is determined by strict equivalence across the following critical electrical and mechanical parameters:

Electrical Equivalence Criteria:

  • Drain to Source Voltage (Vdss): 500V minimum
  • Continuous Drain Current (Id): 44A at 25°C
  • On-State Resistance (Rds On): 120mOhm maximum at specified gate voltage
  • Gate Threshold Voltage (Vgs(th)): 4V maximum
  • Package compatibility: TO-247-3 through-hole mounting

Mechanical Compatibility:

  • Through-hole mounting configuration
  • TO-247-3 package footprint

The FDH44N50 manufactured by onsemi meets all electrical equivalence criteria and shares the identical TO-247-3 package configuration. This device maintains the same voltage rating, current rating, and on-state resistance specification, ensuring direct functional substitution in circuit applications.

Parameter Comparison

Parameter IXFX44N50Q (Main) FDH44N50 (Substitute) Unit
Manufacturer IXYS onsemi
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 500 V
Continuous Drain Current (Id) @ 25°C 44 44 A (Tc)
Drive Voltage (Max Rds On) 10 10 V
Rds On (Max) @ Id, Vgs 120 120 mOhm @ 22A, 10V
Vgs(th) (Max) @ Id 4 4 V
Vgs (Max) ±20 ±30 V
Gate Charge (Qg) (Max) @ Vgs 190 108 nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 7000 5335 pF @ 25V
Power Dissipation (Max) 500 750 W (Tc)
Operating Temperature Range -55 to 150 -55 to 175 °C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-247-3 Variant TO-247-3
Product Status Obsolete Active
RoHS Status ROHS3 Compliant ROHS3 Compliant
REACH Status REACH Unaffected REACH Unaffected

Engineering Selection Recommendations

Primary Substitute: FDH44N50

The FDH44N50 is the recommended substitute for the obsolete IXFX44N50Q. This selection is based on the following factors:

Electrical Compatibility: The FDH44N50 maintains identical specifications for all critical electrical parameters: 500V Vdss, 44A continuous drain current, and 120mOhm Rds On at the specified operating point. These parameters ensure functional equivalence in circuit operation.

Mechanical Compatibility: Both devices utilize the TO-247-3 through-hole package, enabling direct physical substitution without PCB redesign or mechanical rework.

Product Status and Supply: The FDH44N50 carries an Active product status with 2465 units in current inventory, ensuring long-term availability and supply chain continuity. The IXFX44N50Q is classified as Obsolete, making the FDH44N50 the appropriate choice for new designs and ongoing production support.

Regulatory Compliance: Both devices are ROHS3 Compliant and REACH Unaffected, meeting current environmental and regulatory requirements.

Performance Advantages: The FDH44N50 offers enhanced performance characteristics compared to the IXFX44N50Q: higher maximum power dissipation (750W versus 500W), extended operating temperature range (-55°C to 175°C versus -55°C to 150°C), lower gate charge (108nC versus 190nC), and reduced input capacitance (5335pF versus 7000pF). These improvements provide additional design margin and reduced switching losses in power conversion applications.

Frequently Asked Questions (FAQ)

Q: Can the FDH44N50 be used as a direct replacement for the IXFX44N50Q?

A: Yes. The FDH44N50 is electrically and mechanically equivalent to the IXFX44N50Q. Both devices share identical voltage ratings (500V Vdss), current ratings (44A continuous drain current), on-state resistance specifications (120mOhm), and TO-247-3 package configuration. No circuit modifications or PCB changes are required for substitution.

Q: What are the key differences between these two devices?

A: The primary differences are manufacturer origin and enhanced performance characteristics in the FDH44N50. The FDH44N50 provides higher maximum power dissipation (750W versus 500W), extended operating temperature range (175°C versus 150°C maximum junction temperature), lower gate charge (108nC versus 190nC), and reduced input capacitance (5335pF versus 7000pF). These differences represent performance improvements that do not affect substitution compatibility.

Q: Is the TO-247-3 package identical between both devices?

A: Yes. Both the IXFX44N50Q and FDH44N50 utilize the TO-247-3 through-hole package configuration. The physical footprint, pin assignment, and mounting requirements are identical, enabling direct PCB compatibility without modification.

Q: What is the product status of each device?

A: The IXFX44N50Q is classified as Obsolete, indicating discontinued manufacturing and limited availability. The FDH44N50 is classified as Active, indicating current production and ongoing supply availability. For new designs and long-term production support, the FDH44N50 is the appropriate selection.

Q: Are both devices compliant with current environmental regulations?

A: Yes. Both the IXFX44N50Q and FDH44N50 are ROHS3 Compliant and REACH Unaffected, meeting current environmental and regulatory requirements for electronic component manufacturing and use.

Q: What is the gate charge difference, and does it affect circuit design?

A: The FDH44N50 has lower gate charge (108nC) compared to the IXFX44N50Q (190nC). Lower gate charge reduces switching losses and driver power requirements in gate drive circuits. This difference is advantageous and does not require circuit redesign; existing gate drive circuits will operate with improved efficiency.

Q: Can the FDH44N50 operate at higher temperatures than the IXFX44N50Q?

A: Yes. The FDH44N50 has an extended operating temperature range of -55°C to 175°C, compared to the IXFX44N50Q range of -55°C to 150°C. This provides an additional 25°C of maximum junction temperature capability, offering greater thermal margin in high-temperature applications.

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