IXFX40N90P Equivalent & Substitute Parts

Part Overview

The IXFX40N90P is an N-Channel MOSFET manufactured by IXYS, part of the HiPerFET™ Polar series. This device is rated for 900V drain-to-source voltage with 40A continuous drain current and 960W maximum power dissipation. The component is housed in a PLUS247™-3 package (TO-247-3 variant) and is designed for through-hole mounting applications requiring high-voltage switching performance.

The IXFX40N90P maintains Active product status with full RoHS3 compliance and unlimited moisture sensitivity rating. Substitute components are identified to address application requirements where alternative electrical characteristics, voltage ratings, or current specifications are acceptable within system design parameters.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	900	V
Continuous Drain Current (Id) @ 25°C	40	A (Tc)
On-State Resistance (Rds On Max) @ 20A, 10V	230	mOhm
Gate Threshold Voltage (Vgs(th) Max) @ 1mA	6.5	V
Gate Charge (Qg Max) @ 10V	230	nC
Input Capacitance (Ciss Max) @ 25V	14000	pF
Power Dissipation (Max)	960	W (Tc)
Operating Temperature Range	-55 to 150	°C (TJ)
Package Type	TO-247-3	Through Hole
FET Technology	MOSFET (Metal Oxide)	-

Substitute Part Grouping Explanation

Substitute components for the IXFX40N90P are identified based on the following substitution criteria:

Allowed Parameter Variations:

Drain-to-Source Voltage (Vdss): Equal to or greater than 900V
Continuous Drain Current (Id): Equal to or greater than 40A
On-State Resistance (Rds On): Equal to or lower than 230mOhm (at rated conditions)
Gate Threshold Voltage (Vgs(th)): Within ±1.5V of 6.5V
Power Dissipation: Equal to or greater than 960W
Operating Temperature (TJ): Equal to or greater than 150°C maximum
Package Type: TO-247-3 or compatible through-hole variant
FET Type: N-Channel only
Mounting: Through-hole configuration

Substitution Logic: The SCT3160KLGC11 is listed as a substitute component. This SiCFET device operates at a higher voltage rating (1200V vs. 900V) and utilizes Silicon Carbide technology. While the continuous drain current is lower (17A vs. 40A), the on-state resistance is comparable (208mOhm vs. 230mOhm at different test conditions). The device maintains TO-247-3 package compatibility and through-hole mounting configuration. Both components are Active status with RoHS3 compliance.

Parameter Comparison

Parameter	IXFX40N90P	SCT3160KLGC11	Unit
Manufacturer	IXYS	Rohm Semiconductor	-
FET Type	N-Channel	N-Channel	-
Technology	MOSFET (Metal Oxide)	SiCFET (Silicon Carbide)	-
Drain-to-Source Voltage (Vdss)	900	1200	V
Continuous Drain Current (Id) @ 25°C	40	17	A (Tc)
On-State Resistance (Rds On Max)	230 @ 20A, 10V	208 @ 5A, 18V	mOhm
Gate Threshold Voltage (Vgs(th) Max)	6.5 @ 1mA	5.6 @ 2.5mA	V
Gate Charge (Qg Max)	230 @ 10V	42 @ 18V	nC
Input Capacitance (Ciss Max)	14000 @ 25V	398 @ 800V	pF
Power Dissipation (Max)	960	103	W (Tc)
Operating Temperature (TJ)	-55 to 150	175 (Max)	°C
Package Type	TO-247-3	TO-247N	-
Mounting Type	Through Hole	Through Hole	-
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	-
Product Status	Active	Active	-

Engineering Selection Recommendations

IXFX40N90P Selection Criteria: The IXFX40N90P is the primary component choice for applications requiring 900V operation with 40A continuous drain current capacity. This MOSFET-based device delivers 960W maximum power dissipation and is suitable for high-current switching applications within the 900V voltage class. The component maintains Active product status with full RoHS3 compliance and unlimited moisture sensitivity rating (MSL 1). The PLUS247™-3 package provides robust through-hole mounting for industrial and power conversion applications.

SCT3160KLGC11 Selection Criteria: The SCT3160KLGC11 is applicable in applications where higher voltage margin (1200V rating) is required or where Silicon Carbide technology benefits are prioritized. This SiCFET device is suitable for lower current applications (17A continuous) and delivers significantly lower gate charge (42nC vs. 230nC), which may reduce switching losses in gate-drive-limited circuits. The device maintains Active product status with RoHS3 compliance. The TO-247N package provides through-hole compatibility with TO-247-3 footprints.

Both components are Active status products with equivalent compliance certifications (RoHS3, REACH Unaffected, EAR99 ECCN classification). Selection between these devices depends on application current requirements, voltage margin specifications, and switching frequency considerations.

Frequently Asked Questions (FAQ)

Q: Can the SCT3160KLGC11 directly replace the IXFX40N90P in all applications?

A: Direct replacement is not universal. The SCT3160KLGC11 has a lower continuous drain current rating (17A vs. 40A). Applications requiring the full 40A continuous current capacity of the IXFX40N90P cannot use the SCT3160KLGC11 as a direct substitute. The higher voltage rating (1200V) of the SCT3160KLGC11 is compatible with 900V circuit designs but does not provide functional equivalence for current-limited applications.

Q: Are the TO-247-3 and TO-247N packages mechanically compatible?

A: Both packages are TO-247 variants with through-hole mounting configuration. The TO-247-3 and TO-247N packages share the same footprint and pin spacing, allowing mechanical interchangeability on printed circuit boards designed for TO-247 mounting. Pin assignment and lead configuration must be verified against specific device datasheets prior to installation.

Q: What are the key differences in gate charge between these devices?

A: The IXFX40N90P has a gate charge of 230nC at 10V, while the SCT3160KLGC11 has 42nC at 18V. The significantly lower gate charge of the SCT3160KLGC11 results from Silicon Carbide technology characteristics. Lower gate charge reduces gate-drive power requirements and may enable faster switching transitions in gate-drive-limited circuits.

Q: Are both devices RoHS3 compliant?

A: Yes. Both the IXFX40N90P and SCT3160KLGC11 are RoHS3 compliant with unlimited moisture sensitivity rating (MSL 1). Both devices are REACH Unaffected and classified under ECCN EAR99 for export control purposes.

Q: What is the maximum operating temperature difference between these devices?

A: The IXFX40N90P operates to a maximum junction temperature of 150°C, while the SCT3160KLGC11 operates to 175°C. The SCT3160KLGC11 provides a 25°C higher temperature margin, which may be beneficial in thermally constrained applications. However, this does not affect substitution eligibility for applications operating within the 150°C limit of the IXFX40N90P.

Q: How do the on-state resistance values compare between these devices?

A: The IXFX40N90P has Rds On of 230mOhm at 20A and 10V gate voltage. The SCT3160KLGC11 has Rds On of 208mOhm at 5A and 18V gate voltage. Direct resistance comparison is not valid due to different test conditions (current and gate voltage). The SCT3160KLGC11 measurement at lower current (5A) and higher gate voltage (18V) reflects Silicon Carbide device characteristics and cannot be directly compared to the MOSFET measurement at 20A and 10V.

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