IXFX38N80Q2 Equivalent & Substitute Parts

Part Overview

The IXFX38N80Q2 is an N-Channel 800V 38A MOSFET manufactured by IXYS in the HiPerFET™ Q2 Class series. This device is housed in a PLUS247™-3 package and rated for 735W maximum power dissipation at the case temperature. The component is designed for high-voltage switching applications requiring robust thermal performance and reliable gate drive characteristics.

The IXFX38N80Q2 maintains Active product status with full RoHS3 compliance and unlimited moisture sensitivity rating. Equivalent and substitute parts are identified based on matching or exceeding critical electrical parameters including drain-source voltage rating, continuous drain current capability, on-resistance characteristics, and thermal performance within the same or compatible package families.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	800	V
Continuous Drain Current (Id) @ 25°C	38	A (Tc)
On-Resistance (Rds On Max) @ 19A, 10V	220	mOhm
Gate Threshold Voltage (Vgs(th) Max) @ 8mA	4.5	V
Gate Charge (Qg Max) @ 10V	190	nC
Input Capacitance (Ciss Max) @ 25V	8340	pF
Power Dissipation (Max)	735	W (Tc)
Operating Temperature Range	-55 to 150	°C (TJ)
Package Type	TO-247-3 Variant	Through Hole
FET Type	N-Channel	MOSFET

Substitute Part Grouping Explanation

Substitute parts for the IXFX38N80Q2 are selected based on the following critical parameters that determine functional compatibility:

Primary Matching Criteria:

Drain-Source Voltage (Vdss): 800V minimum rating required
Continuous Drain Current (Id): Equal to or greater than 38A at 25°C case temperature
Package Type: TO-247-3 or compatible through-hole variant
Operating Temperature Range: -55°C to 150°C minimum
FET Technology: N-Channel MOSFET (Metal Oxide)

Secondary Compatibility Parameters:

On-Resistance (Rds On): Lower or equivalent values at specified gate voltage
Gate Charge (Qg): Comparable gate drive requirements
Input Capacitance (Ciss): Similar capacitive loading characteristics
Power Dissipation Rating: Thermal capability for intended application

Substitutes are grouped into two categories: direct equivalents meeting or exceeding all primary criteria, and functional alternatives with trade-offs in specific parameters that may be acceptable depending on application requirements.

Parameter Comparison

Parameter	IXFX38N80Q2	APT38F80B2	SPW17N80C3FKSA1	STW18N60M2
Manufacturer	IXYS	Microchip Technology	Infineon Technologies	STMicroelectronics
Drain-Source Voltage (Vdss)	800V	800V	800V	600V
Continuous Drain Current (Id) @ 25°C	38A	41A	17A	13A
On-Resistance (Rds On Max) @ 10V	220 mOhm @ 19A	240 mOhm @ 20A	290 mOhm @ 11A	280 mOhm @ 6.5A
Gate Threshold Voltage (Vgs(th) Max)	4.5V @ 8mA	5V @ 2.5mA	3.9V @ 1mA	4V @ 250µA
Gate Charge (Qg Max) @ 10V	190 nC	260 nC	177 nC	21.5 nC
Input Capacitance (Ciss Max)	8340 pF @ 25V	8070 pF @ 25V	2320 pF @ 25V	791 pF @ 100V
Power Dissipation (Max)	735W	1040W	227W	110W
Operating Temperature	-55 to 150°C	-55 to 150°C	-55 to 150°C	-55 to 150°C
Package Type	PLUS247™-3	T-MAX™ [B2]	PG-TO247-3-1	TO-247-3
RoHS3 Compliance	Yes	Yes	Yes	Yes
Product Status	Active	Active	Active	Active

Engineering Selection Recommendations

APT38F80B2 (Microchip Technology)

The APT38F80B2 is a direct functional equivalent to the IXFX38N80Q2. Both devices share identical 800V drain-source voltage rating and comparable continuous drain current specifications (41A versus 38A). The APT38F80B2 provides superior power dissipation capability (1040W versus 735W), making it suitable for applications requiring higher thermal headroom. On-resistance characteristics are closely matched (240 mOhm versus 220 mOhm), with gate charge requirements slightly elevated (260 nC versus 190 nC). The T-MAX™ [B2] package is mechanically compatible with TO-247-3 footprints. Both devices maintain Active product status, full RoHS3 compliance, and identical operating temperature ranges. This substitute is recommended for direct replacement in existing designs.

SPW17N80C3FKSA1 (Infineon Technologies)

The SPW17N80C3FKSA1 maintains the 800V voltage rating but provides reduced continuous drain current (17A versus 38A) and lower power dissipation (227W versus 735W). This device is suitable only for applications where current requirements do not exceed 17A. The CoolMOS™ series technology offers lower gate charge (177 nC) and significantly reduced input capacitance (2320 pF), providing advantages in high-frequency switching applications. The PG-TO247-3-1 package is mechanically compatible with standard TO-247-3 footprints. This substitute is applicable only when current derating is acceptable for the target application.

STW18N60M2 (STMicroelectronics)

The STW18N60M2 is a reduced-voltage alternative with 600V drain-source rating (versus 800V) and significantly lower current capability (13A versus 38A). This device is not recommended as a direct substitute for the IXFX38N80Q2 due to insufficient voltage and current ratings. The STW18N60M2 is applicable only in applications where both voltage and current requirements are substantially lower than the original specification. The MDmesh™ II Plus series offers minimal gate charge (21.5 nC) and very low input capacitance (791 pF), suitable for high-frequency switching at reduced power levels.

Selection Basis:

All substitute parts maintain Active product status and full RoHS3 compliance, ensuring regulatory and supply chain continuity. Package compatibility is confirmed for all alternatives within the TO-247-3 family. Operating temperature ranges are identical across all devices. Selection should prioritize APT38F80B2 for direct replacement applications, with SPW17N80C3FKSA1 and STW18N60M2 reserved for applications with reduced electrical requirements.

Frequently Asked Questions (FAQ)

Q: Can the APT38F80B2 be used as a direct replacement for the IXFX38N80Q2?

A: Yes. The APT38F80B2 meets or exceeds all primary electrical specifications of the IXFX38N80Q2, including 800V voltage rating, 41A continuous drain current (exceeding the 38A requirement), and compatible TO-247-3 package family. Both devices operate across -55°C to 150°C and maintain RoHS3 compliance. The APT38F80B2 provides higher power dissipation capability (1040W versus 735W), making it suitable for direct board-level substitution without design modification.

Q: What are the limitations of using the SPW17N80C3FKSA1 as a substitute?

A: The SPW17N80C3FKSA1 has a maximum continuous drain current of 17A, which is less than half the IXFX38N80Q2 specification of 38A. This device is suitable only for applications where the actual circuit current requirement does not exceed 17A. The 800V voltage rating is maintained, but the reduced current capability and lower power dissipation (227W) limit its applicability to lower-power switching circuits. Gate drive characteristics differ significantly, with lower gate charge (177 nC) and input capacitance (2320 pF), which may require circuit optimization for proper switching performance.

Q: Is the STW18N60M2 a viable substitute?

A: The STW18N60M2 is not recommended as a substitute for the IXFX38N80Q2 in applications requiring the full electrical specifications. The device has a reduced drain-source voltage rating of 600V (versus 800V) and continuous drain current of only 13A (versus 38A). This device is applicable only in circuits where both voltage and current requirements are substantially lower than the original design specification. Use of this device in an application designed for 800V/38A operation would result in component failure or inadequate performance.

Q: Are all substitute parts compatible with the same PCB footprint?

A: Yes. All substitute parts use TO-247-3 or compatible through-hole package variants (PLUS247™-3, T-MAX™ [B2], PG-TO247-3-1). These packages share identical pin configurations and mechanical dimensions, allowing direct PCB footprint compatibility without layout modification. However, thermal management considerations may differ due to variations in power dissipation ratings and package thermal characteristics.

Q: What is the impact of different gate charge specifications on circuit design?

A: Gate charge (Qg) determines the total charge required to switch the MOSFET from off to on state. The IXFX38N80Q2 requires 190 nC at 10V gate voltage. The APT38F80B2 requires 260 nC, necessitating slightly higher gate drive current or longer switching times. The SPW17N80C3FKSA1 requires only 177 nC, allowing faster switching with lower gate drive requirements. The STW18N60M2 requires minimal gate charge (21.5 nC), suitable for high-frequency applications. Substitution with significantly different gate charge values may require gate driver circuit optimization to maintain switching performance and thermal efficiency.

Q: Do all substitute parts meet the same compliance and regulatory requirements?

A: Yes. All substitute parts listed maintain Active product status, RoHS3 compliance, REACH unaffected status, and identical EAR99 export classification. Moisture sensitivity level is 1 (Unlimited) for all devices, indicating no special handling requirements. Operating temperature ranges are identical (-55°C to 150°C). These regulatory and compliance characteristics ensure that substitution does not introduce supply chain, environmental, or export restrictions.

Q: What parameters should be verified before selecting a substitute in a specific application?

A: Critical parameters for substitution verification include: (1) Drain-Source Voltage (Vdss) must equal or exceed the application requirement; (2) Continuous Drain Current (Id) must equal or exceed the maximum circuit current at 25°C case temperature; (3) On-Resistance (Rds On) must be acceptable for power dissipation and thermal management; (4) Gate Charge (Qg) and Input Capacitance (Ciss) must be compatible with available gate drive circuitry; (5) Power Dissipation rating must accommodate worst-case thermal conditions; (6) Package type must be mechanically compatible with PCB layout. Application-specific requirements such as switching frequency, duty cycle, and thermal environment should be evaluated against each substitute's electrical characteristics.

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